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Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

B. Habib·J. Shabani·E. P. De Poortere·M. Shayegan·R. Winkler
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Abstract

We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10^{-4} strain. The results are in very good agreement with our numerical calculations of the strain-induced spin-splitting.

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B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler. 2006-10-04. Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain. https://doi.org/10.1103/physrevb.75.153304

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