Schottky-barrier double-walled carbon nanotube field-effect transistors

Shidong Wang; Milena Grifoni

doi:10.1103/physrevb.76.033413

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Schottky-barrier double-walled carbon nanotube field-effect transistors

Shidong Wang·Milena Grifoni

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Abstract

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show asymmetries of the $I$-$V$ characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon nanotube FET.

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Shidong Wang, Milena Grifoni. 2007-07-26. Schottky-barrier double-walled carbon nanotube field-effect transistors. https://doi.org/10.1103/physrevb.76.033413

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