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In Situ Treatment of a Scanning Gate Microscopy Tip

A. E. Gildemeister·T. Ihn·M. Sigrist·K. Ensslin·D. C. Driscoll·A. C. Gossard
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Abstract

In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.

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A. E. Gildemeister, T. Ihn, M. Sigrist, K. Ensslin, D. C. Driscoll, A. C. Gossard. 2007-06-27. In Situ Treatment of a Scanning Gate Microscopy Tip. https://doi.org/10.1063/1.2742314

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