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Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

E. E. Vdovin·Yu. N. Khanin·O. Makarovsky·A. Patane·L. Eaves·M. Henini·C. J. Mellor·K. A. Benedict·R. Airey
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Abstract

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

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E. E. Vdovin, Yu. N. Khanin, O. Makarovsky, A. Patane, L. Eaves, M. Henini, C. J. Mellor, K. A. Benedict, R. Airey. 2007-03-23. Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot. https://arxiv.org/abs/cond-mat/0703614

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