Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds

Daniel Olguin; Rafael Baquero

doi:10.1063/1.51225

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arXiv · cond-mat/9606096

Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds

Daniel Olguin·Rafael Baquero

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Abstract

We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states are of the same character of those reported recently in CdTe(100) [Phys. Rev. {\bf 50}, 1980 (1994)]. We analyze the states in the valence band region and compare with photoemission spectroscopy data.

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Daniel Olguin, Rafael Baquero. 1996-06-14. Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds. https://doi.org/10.1063/1.51225

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