Quantized Conductance of One-Dimensional Doped Mott Insulator

Michiyasu Mori; Masao Ogata; Hidetoshi Fukuyama

doi:10.1143/jpsj.66.3363

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Quantized Conductance of One-Dimensional Doped Mott Insulator

Michiyasu Mori·Masao Ogata·Hidetoshi Fukuyama

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Abstract

The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as $g=2e^2/h$ and there is no renormalization by Umklapp scattering process. At finite temperatures, however, the quantization is affected depending on the gate voltage and temperature.

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Michiyasu Mori, Masao Ogata, Hidetoshi Fukuyama. 1997-08-01. Quantized Conductance of One-Dimensional Doped Mott Insulator. https://doi.org/10.1143/jpsj.66.3363

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