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arXiv · cond-mat/9811338

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Silvano De Franceschi·Francesco Giazotto·Fabio Beltram·Lucia Sorba·Marco Lazzarino·Alfonso Franciosi
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Abstract

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.

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Silvano De Franceschi, Francesco Giazotto, Fabio Beltram, Lucia Sorba, Marco Lazzarino, Alfonso Franciosi. 1998-11-24. Andreev reflection in Si-engineered Al/InGaAs hybrid junctions. https://doi.org/10.1063/1.122926

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