arXiv · cond-mat/9906088
Conductance fluctuations near Anderson transition
Abstract
In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (n_c \approx 4 x 10^18 /cc). The measurements show that the noise, which arises from bulk sources, does not diverge as the Ioffe-Regal limit (k_{F}l -> 1) is approached from the metallic side. At room temperatures, the magnitude of the noise shows a shallow maximum around k_{F}l \approx 1.5 and drops sharply as the insulating state is approached.
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Arindam Ghosh, A. K. Raychaudhuri. 1999-06-07. Conductance fluctuations near Anderson transition. https://arxiv.org/abs/cond-mat/9906088
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