arXiv subjects

A. M. Malyarenko

Publications and source records attributed to A. M. Malyarenko.

25 records · Page 2Linked to original sources

arXiv2006

ODMR Of Impurity Centers Embedded In Silicon Microcavities

We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) embedded in silicon microcavities that exhibit a distributed feedback identified by the FIR transmission spectra. The excitonic normal-mode coupling (NMC) is found to result in high efficient bound exciton photoluminescence in the range of the Rabi splitting. The bound excitons at the iron-boron pair and the erbium-related centers inserted in SQW are shown to cause giant exchange splitting of the center multiplets as a result of the strong sp-d and sp-f mixing in the absence of the external magnetic field. The NMC regime is observed to reveal this exchange splitting in the angular dependencies of the transmission spectra measured in the range of the Rabi splitting that are evidence of the ODMR of the trigonal iron-boron pairs and trigonal erbium-related centers.

cond-mat.mes-hall↗

arXiv2006

Fractional form of the 0.7(2e2/h) feature

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the top gate voltage that are applied perpendicularly to the plane of the double-slit ring and revealed by the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations, respectively. Firstly, the amplitude and phase sensitivity of the 0.7(2e2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction (SOI). Secondly, the values of the AC conductance oscillations caused by the Rashba SOI are found to take the fractional form with both the plateaus and steps as a function of the top gate voltage.

cond-mat.mes-hall↗

arXiv2006

Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures

The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the n-CdF2 bulk crystal. The findings of the hole conductance oscillations in the plane of the p-type quantum well that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e2/h.

cond-mat.mes-hall↗

arXiv2006

Spin interference in silicon three-terminal one-dimensional rings

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.

cond-mat.mes-hall↗

arXiv2006

Superconductivity in silicon nanostructures

We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled silicon quantum wells, 2nm, confined by the delta - barriers heavily doped with boron, 3nm. The EPR and the thermo-emf studies show that the delta - barriers appear to consist of the trigonal dipole centres, which are caused by the negative-U reconstruction of the shallow boron acceptors. Using the CV and thermo-emf techniques, the transport of two-dimensional holes inside SQW is demonstrated to be accompanied by single-hole tunneling through these negative-U centres that results in the superconductivity of the delta - barriers. The values of the correlation gaps obtained from these measurements are in a good agreement with the data derived from the temperature and magnetic field dependencies of the magnetic susceptibility, which reveal a strong diamagnetism and additionally identify the superconductor gap value.

cond-mat.supr-con↗

arXiv2005

Spin interference in silicon one-dimensional rings

We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 feature of the hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2004

Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane.

cond-mat.mes-hall↗