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A. M. Tyryshkin

Publications and source records attributed to A. M. Tyryshkin.

29 records · Page 2Linked to original sources

Dynamical Decoupling in the Presence of Realistic Pulse Errors

One of the most significant hurdles to be overcome on the path to practical quantum information processors is dealing with quantum errors. Dynamical decoupling is a particularly promising approach that complements conventional quantum error correction by eliminating some correlated errors without the overhead of additional qubits. In practice, the control pulses used for decoupling are imperfect and thus introduce errors which can accumulate after many pulses. These instrumental errors can destroy the quantum state. Here we examine several dynamical decoupling sequences, and their concatenated variants, using electron spin resonance of donor electron spins in a $^{28}$Si crystal. All of the sequences cancel phase noise arising from slowly fluctuating magnetic fields in our spectrometer, but only those sequences based upon alternating $π$-rotations about the X- and Y-axes in the rotating frame (XYXY sequences) demonstrate the ability to store an arbitrary quantum state. By comparing the experimental results with a detailed theoretical analysis we demonstrate that the superior performance of XYXY sequences arises from the fact that they are self-correcting for the dominant instrumental pulse errors in magnetic resonance experiments. We further find that concatenated sequences perform better than the periodic variants, maintaining near 100% fidelities for spin states even after several hundred control pulses. Intuitively, one would expect the instrumental error to increase with the number of pulses in the sequence but we show that the dominant first-order error does not increase when concatenating the XYXY sequence.

quant-ph↗

Spin relaxation and coherence times for electrons at the Si/SiO2 interface

While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 us at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10 us at 350 mK, increasing to 30 us when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots.

cond-mat.mtrl-sci↗

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

cond-mat.mtrl-sci↗

Chiral Symmetry and Electron Spin Relaxation of Lithium Donors in Silicon

We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times are extremely long for the temperatures below 0.3 K. This prediction is based on a new finding of the chiral symmetry of the donor states, which presists in the presence of random strains and magnetic fields parallel to one of the cubic axes. Experimentally observed kinetics of magnetization reversal at 2.1 K and 4.5 K are in a very close agreement with the theory. To explain these kinetics we introduced a new mechanism of spin decoherence based on a combination of a small off-site displacement of the Li atom and an umklapp phonon process. Both these factors weakly break chiral symmetry and enable the long-term spin relaxation.

cond-mat.other↗

Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.

cond-mat.mtrl-sci↗

Spin resonance of 2D electrons in a large-area silicon MOSFET

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

cond-mat.mtrl-sci↗

Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.

cond-mat.mtrl-sci↗

Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

cond-mat.mtrl-sci↗

Electron spin coherence in Si/SiGe quantum wells

The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature.

cond-mat.mtrl-sci↗

Spin Manipulation of Free 2-Dimensional Electrons in Si/SiGe Quantum Wells

An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate spin rotations of an ensemble of free 2-dimensional electrons confined to a silicon quantum well embedded in a silicon-germanium alloy host. The spins are manipulated by resonant microwave pulses and an applied magnetic field in a pulsed electron paramagnetic resonance spectrometer. From the pulsed measurements we deduce a spin coherence time in this system of about 3 microsec, allowing at least 100 elementary operations before decoherence destroys the spin state. These measurements represent an important step towards the realization of quantum computation using electron spins in semiconductors, but at the same time establish some constraints on the design of such a system.

cond-mat.mes-hall↗

Electron Spin-Relaxation Times of Phosphorus Donors in Silicon

Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach process with DeltaE = 126 K. The 2-pulse echo decay is exponential in 28Si:P, with the transverse relaxation (decoherence) time, T2, controlled by the Orbach process above ~12 K and by instantaneous diffusion at lower temperatures. Spin echo experiments with varying pulse turning angles show that the intrinsic T2 of an isolated spin in 28Si:P is ~60 ms at 7 K.

cond-mat.mtrl-sci↗