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A. Matos-Abiague

Publications and source records attributed to A. Matos-Abiague.

At least 19 recordsLinked to original sources

Enhancing supercurrent-based inertial sensing via interactions in atomtronic angular accelerometers

We theoretically investigate supercurrents of ultracold atoms in angularly ac-shaken ring lattices subjected to external rotation. Our results demonstrate how these supercurrents can be harnessed for the development of high-precision atomtronic angular accelerometers. Using both analytical and numerical approaches within the Bose-Hubbard model framework, we demonstrate that a significant net atomic current arises when the lattice driving frequency is tuned to an integer fraction of the Bloch frequency, while the current averages to nearly zero away from such a resonance. In the single-particle regime, the resonance width scales inversely with the averaging time, thereby setting a fundamental Fourier-limited bound on the measurement's sensitivity. Strikingly, our numerical simulations demonstrate that this Fourier limit - a fundamental barrier in the non-interacting system - can be surpassed by introducing weak interactions between atoms. In the interacting regime, the sensitivity surpasses the Fourier-limited scaling with the averaging time, achieving an improvement of at least two orders of magnitude over the single-particle scenario, and exceeding the performance of previously proposed ultracold-atom-based angular accelerometers. These findings pave the way for developing new atomic-current-based inertial sensors with interaction-enhanced sensitivity.

cond-mat.quant-gas

Signatures of Topological Superconductivity and Josephson Diode Effects on the Magnetocurrent-Phase Relation of Planar Josephson Junctions

We present a theoretical study of proximitized planar Josephson junctions (JJs) with Rashba spin-orbit coupling (SOC) subject to an in-plane magnetic field and demonstrate that the magneto-current-phase relation (magneto-CPR) provides a powerful and unified probe of their microscopic and topological properties. By analyzing the full phase and Zeeman-field dependence of the supercurrent, we show that magneto-CPR measurements allow one to reconstruct the ground-state phase that minimizes the system's free energy in the absence of phase bias. This reconstructed phase generally displays 0-pi-like transitions as a function of the Zeeman energy, and we demonstrate that the magnitudes of the associated phase jumps provide quantitative information about the Rashba SOC. We further show that the mixed phase-field response encoded in the magneto-CPR enables the extraction of the second mixed spin susceptibility, which serves as a sensitive diagnostic of gap closings and can be used to construct a superconducting topological phase diagram in terms of the relative topological gap. In addition, the magneto-CPR yields the field dependence of the forward and reverse critical currents, allowing one to characterize the Josephson diode effect and its connection to the Zeeman field, Rashba SOC, and junction transparency. Our results establish magneto-CPR measurements as a versatile spectroscopic tool that can be used to extract key system parameters and provide evidence of topological superconducting phases in planar JJs.

cond-mat.supr-con

Majorana edge and end states in planar Josephson junctions

We theoretically investigate the localization properties of Majorana states (MSs) in proximitized, planar Josephson Junctions (JJs) oriented along different crystallographic orientations and in the presence of an in-plane magnetic field and Rashba and Dresselhaus spin-orbit couplings. We show that two types of MSs may emerge when the junction transits into the topological superconducting state. In one case, referred to as end-like MSs, the Majorana quasiparticles are mainly localized inside the normal region at the opposite ends of the junction. In contrast, edge-like MSs extend along the opposite edges of the system, perpendicular to the junction channel. We show how the MSs can transit from end-like to edge-like and vice versa by tuning the magnetic field strength and/or the superconducting phase difference across the junction. In the case of phase-unbiased JJs the transition may occur as the ground state phase difference self-adjusts its value when the Zeeman field is varied. We propose exploiting the extended nature of edge-like MSs as effective interconnects enabling the coupling between topological states in adjacent planar JJs. The impact of electrostatic disorder on the MSs is also analyzed.

cond-mat.supr-con

Helical edge states induced by lateral spin-orbit coupling

The presence of edges locally breaks the inversion symmetry of heterostructures and gives rise to lateral (edge) spin-orbit coupling (SOC), which, under some conditions, can lead to the formation of helical edge states. If the edge SOC is strong enough, the helical edge states can penetrate the band-gap and be energetically isolated from the bulk-like states. As a result backward scattering is suppressed, dissipationless helical edge channels protected against time-inversion symmetric perturbations emerge, and the system behaves as a 2D topological insulator (TI). However, unlike in previous works on TIs, the mechanism proposed here for the creation of protected helical edge states relies on the strong edge SOC rather than on band inversion.

cond-mat.mes-hall

Spin-orbit interaction induced singularity of the charge density relaxation propagator

The charge density relaxation propagator of a two dimensional electron system, which is the slope of the imaginary part of the polarization function, exhibits singularities for bosonic momenta having the order of the spin-orbit momentum and depending on the momentum orientation. We have provided an intuitive understanding for this non-analytic behavior in terms of the inter chirality subband electronic transitions, induced by the combined action of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit coupling. It is shown that the regular behavior of the relaxation propagator is recovered in the presence of only one BR or D spin-orbit field or for spin-orbit interaction with equal BR and D coupling strengths. This creates a new possibility to influence carrier relaxation properties by means of an applied electric field.

cond-mat.mes-hall

Theory of thermal spin-charge coupling in electronic systems

The interplay between spin transport and thermoelectricity offers several novel ways of generating, manipulating, and detecting nonequilibrium spin in a wide range of materials. Here we formulate a phenomenological model in the spirit of the standard model of electrical spin injection to describe the electronic mechanism coupling charge, spin, and heat transport and employ the model to analyze several different geometries containing ferromagnetic (F) and nonmagnetic (N) regions: F, F/N, and F/N/F junctions which are subject to thermal gradients. We present analytical formulas for the spin accumulation and spin current profiles in those junctions that are valid for both tunnel and transparent (as well as intermediate) contacts. For F/N junctions we calculate the thermal spin injection efficiency and the spin accumulation induced nonequilibrium thermopower. We find conditions for countering thermal spin effects in the N region with electrical spin injection. This compensating effect should be particularly useful for distinguishing electronic from other mechanisms of spin injection by thermal gradients. For F/N/F junctions we analyze the differences in the nonequilibrium thermopower (and chemical potentials) for parallel and antiparallel orientations of the F magnetizations, as evidence and a quantitative measure of the spin accumulation in N. Furthermore, we study the Peltier and spin Peltier effects in F/N and F/N/F junctions and present analytical formulas for the heat evolution at the interfaces of isothermal junctions.

cond-mat.mes-hall

Pseudospin excitations in coaxial nanotubes

In a 2DEG confined to two coaxial tubes the `tube degree of freedom' can be described in terms of pseudospin-1/2 dynamics. The presence of tunneling between the two tubes leads to a collective oscillation known as pseudospin resonance. We employ perturbation theory to examine the dependence of the frequency of this mode with respect to a coaxial magnetic field for the case of small intertube distances. Coulomb interaction leads to a shift of the resonance frequency and to a finite lifetime of the pseudospin excitations. The presence of the coaxial magnetic field gives rise to pronounced peaks in the shift of the resonance frequency. For large magnetic fields this shift vanishes due to the effects of Zeeman splitting. Finally, an expression for the linewidth of the resonance is derived. Numerical analysis of this expression suggests that the linewidth strongly depends on the coaxial magnetic field, which leads to several peaks of the linewidth as well as regions where damping is almost completely suppressed.

cond-mat.other

Spin-orbit coupling induced by a mass gradient

The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradient across the interfaces results in a SOC which competes with the SOC created by the electric field in the valence band. However, in graded quantum wells subjected to an external electric field, the mass-gradient induced SOC can be finite even when the electric field in the valence band vanishes.

cond-mat.mes-hall

Beating of Friedel oscillations induced by spin-orbit interaction

By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.

cond-mat.mes-hall

Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.

cond-mat.mes-hall

Angular dependence of the tunneling anisotropic magnetoresistance

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser {\it et al.}, Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated.

cond-mat.mes-hall

Anisotropic plasmons in a two-dimensional electron gas with spin-orbit interaction

Spin-orbit coupling induced anisotropies of plasmon dynamics are investigated in two-dimensional semiconductor structures. The interplay of the linear Bychkov-Rashba and Dresselhaus spin-orbit interactions drastically affects the plasmon spectrum: the dynamical structure factor exhibits variations over several decades, prohibiting plasmon propagation in specific directions. While this plasmon filtering makes the presence of spin-orbit coupling in plasmon dynamics observable, it also offers a control tool for plasmonic devices. Remarkably, if the strengths of the two interactions are equal, not only the anisotropy, but all the traces of the linear spin-orbit coupling in the collective response disappear.

cond-mat.mes-hall

Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs

Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic control of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects.

cond-mat.mtrl-sci

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.

cond-mat.mtrl-sci

Spin-orbit induced anisotropy in the tunneling magnetoresistance of magnetic tunnel junctions

The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR) originates from the interference between Dresselhaus and Bychkov-Rashba spin-orbit couplings is formulated. Bias induced changes of the Bychkov-Rashba spin-orbit coupling strength can result in an inversion of the TAMR. The theoretical calculations are in good agreement with the TAMR experimentally observed in epitaxial Fe/GaAs/Au tunnel junctions.

cond-mat.mes-hall

Nonequilibrium charge dynamics of light-driven rings threaded by a magnetic flux

We study theoretically the charge polarization and the charge current dynamics of a mesoscopic ring driven by short asymmetric electromagnetic pulses and threaded by an external static magnetic flux. It is shown that the pulse-induced charge polarization and the associated light-emission is controllable by tuning the external magnetic flux. Applying two mutually perpendicular pulses triggers a charge current in the ring. The interplay between this nonequilibrium and the persistent currents is investigated and the conditions under which the pulses stop the persistent current are identified.

cond-mat.mes-hall

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

cond-mat.mes-hall