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arXiv · 0904.3017

Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

M. Wimmer·M. Lobenhofer·J. Moser·A. Matos-Abiague·D. Schuh·W. Wegscheider·J. Fabian·K. Richter·D. Weiss
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Abstract

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.

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M. Wimmer, M. Lobenhofer, J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, K. Richter, D. Weiss. 2009-04-20. Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects. https://doi.org/10.1103/physrevb.80.121301

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