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Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

J. Moser·A. Matos-Abiague·D. Schuh·W. Wegscheider·J. Fabian·D. Weiss
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Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

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J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, D. Weiss. 2006-11-15. Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions. https://doi.org/10.1103/physrevlett.99.056601

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