arXiv subjects

Arash Rahimi-Iman

Publications and source records attributed to Arash Rahimi-Iman.

23 records · Page 2Linked to original sources

arXiv2016

Color Change Effect in an Organic-Inorganic Hybrid Material Based on a Porphyrin Diacid

Porphyrinic materials show a range of interesting and useful optical and electrical properties. The less well-known sub-class of porphyrin diacids has been used in this work to construct an ionic hybrid organic-inorganic material in combination with a halogenidometalate anion. The resulting compound, $[H_6TPyP][BiCl_6]_2$ (1) (TPyP = tetra(4-pyridyl)porphyrin) has been obtained via a facile solution based synthesis in single crystalline form. The material exhibits a broad photoluminescence emission band between 650 and 850 nm at room temperature. Single crystals of $[H_6TPyP][BiCl_6]_2$ show a photocurrent in the fA and a much higher dark current in the nA range. They also display an unexpected reversible color change upon wetting with different liquids. This phenomenon has been investigated with optical spectroscopy, SEM, XPS and NEXAFS techniques, showing that a surface-based structural coloration effect is the source of the color change. This stands in contrast to other materials where structural coloration typically has to be introduced through elaborate, multi-step processes or the use of natural templates. Additionally, it underscores the potential of self-assembly of porphyrinic hybrid compounds in the fabrication of materials with unusual optical properties.

cond-mat.mtrl-sci↗

arXiv2016

Influence of the Substrate Material on the Optical Properties of Tungsten Diselenide Monolayers

Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.

cond-mat.mes-hall↗

arXiv2016

Magneto photoluminescence measurements of tungsten disulphide monolayers

Layered transition-metal dichalcogenides have attracted great interest in the last few years. Thinned down to the monolayer limit they change from an indirect band structure to a direct band gap in the visible region. Due to the monolayer thickness the inversion symmetry of the crystal is broken and spin and valley are coupled to each other. The degeneracy between the two equivalent valleys, K and K', respectively, can be lifted by applying an external magnetic field. Here, we present photoluminescence measurements of CVD-grown tungsten disulphide (WS${_2}$) monolayers at temperatures of 2 K. By applying magnetic fields up to 7 T in Faraday geometry, a splitting of the photoluminescence peaks can be observed. The magnetic field dependence of the A-exciton, the trion and three bound exciton states is discussed and the corresponding g-factors are determined.

cond-mat.mes-hall↗

arXiv2016

Gain spectroscopy of a type-II VECSEL chip

Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.

physics.optics↗

arXiv2011

Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. In particular, we show that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration.

cond-mat.quant-gas↗