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arXiv · 1201.3662

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Binhui Hu·Tomasz M. Kott·Robert N. McFarland·B. E. Kane
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Abstract

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

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Binhui Hu, Tomasz M. Kott, Robert N. McFarland, B. E. Kane. 2012-01-17. High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces. https://doi.org/10.1063/1.4729584

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