arXiv subjects

B. J. van Wees

Publications and source records attributed to B. J. van Wees.

At least 73 records · Page 4Linked to original sources

arXiv2013

Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves

Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with spin-dependent conductivities very well describes spin and charge transport in such devices. In studies of the interaction between heat and spin transport, or spin caloritronics, until recently it was assumed that both spin species are always at the same temperature. Here we report the observation of different temperatures for the spin up (T_\uparrow) and spin down (T_\downarrow) electrons in a nanopillar spin valve subject to a heat current. The weak relaxation, especially at room temperature, of the spin heat accumulation (T_s = T_\uparrow-T_\downarrow) is essential for its detection in our devices. Using 3D finite element modeling spin heat accumulation (SHA) values of 120 mK and 350 mK are extracted at room temperature and 77 K, respectively, which is of the order of 10% of the total temperature bias over the pillar. This technique uniquely allows the study of inelastic spin scattering at low energies and elevated temperatures, which is not possible by spectroscopic methods.

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arXiv2012

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $Ωμm^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current.

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arXiv2012

Quantum Hall transport as a probe of capacitance profile at graphene edges

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.

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arXiv2012

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second, we probe the effect of chemical modification in the electronic properties of graphene, grown by chemical vapour deposition on nickel. We find that both the chemisorption of hydrogen and the physisorption of porphyrin molecules strongly depress the conductance at low bias indicating the opening of a bandgap in graphene, paving the way towards the chemical engineering of the electronic properties of graphene.

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arXiv2012

Contact induced spin relaxation in Hanle spin precession measurements

In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.

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arXiv2012

Enhancement of spin relaxation time in hydrogenated graphene spin valve devices

Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature.

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arXiv2012

Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are similar to values for lower quality SiO$_2$ based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

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arXiv2012

Localized states influence spin transport in epitaxial graphene

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

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arXiv2012

Spin transport in high quality suspended graphene devices

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

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arXiv2012

Spin-dependent Seebeck coefficients of Ni_{80}Fe_{20} and Co in nanopillar spin valves

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni_{80}Fe_{20}) and cobalt (Co) using nanopillar spin valve devices. The devices were specifically designed to completely separate heat related effects from charge related effects. A pure heat current through the nanopillar spin valve, a stack of two ferromagnetic layers (F) separated by a non-magnetic layer (N), leads to a thermovoltage proportional to the spin-dependent Seebeck coefficient S_{S}=S_{\uparrow}-S_{\downarrow} of the ferromagnet, where S_{\uparrow} and S_{\downarrow} are the Seebeck coefficient for spin-up and spin-down electrons. By using a three-dimensional finite-element model (3D-FEM) based on spin-dependent thermoelectric theory, whose input material parameters were measured in separate devices, we were able to accurately determine a spin-dependent Seebeck coefficient of -1.8 microvolt/Kelvin and -4.5 microvolt/Kelvin for cobalt and permalloy, respectively corresponding to a Seebeck coefficient polarization P_{S}=S_{S}/S_{F} of 0.08 and 0.25, where S_{F} is the Seebeck coefficient of the ferromagnet. The results are in agreement with earlier theoretical work in Co/Cu multilayers and spin-dependent Seebeck and spin-dependent Peltier measurements in Ni_{80}Fe_{20}/Cu spin valve structures.

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arXiv2012

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Ω$s in the high carrier density regime to several M$Ω$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ν=2$ followed by $ν=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.

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arXiv2012

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.

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arXiv2012

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.

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arXiv2011

Nonlinear interaction of spin and charge currents in graphene

We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose graphene as a model system to study these effects and predict its magnitudes in nonlocal spin valve devices. The ambipolar behavior of graphene is used to demonstrate amplification of spin accumulation in p-n junctions by applying a charge current through nonmagnetic contacts.

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arXiv2011

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The excellent quality is supported by the early development of the nu = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a new and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique is simple, fast and yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.

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arXiv2011

Cooling and heating with electron spins: Observation of the spin Peltier effect

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. Connecting two materials with different Peltier coefficients causes a net heat flow towards or away from the interface, resulting in cooling or heating at the interface - the Peltier effect. Spintronics describes the transport of charge and angular momentum by making use of separate spin-up and spin-down channels. Recently, the merger of thermoelectricity with spintronics has given rise to a novel and rich research field named spin caloritronics. Here, we report the first direct experimental observation of refrigeration/heating driven by a spin current, a new spin thermoelectric effect which we call the spin Peltier effect. The heat flow is generated by the spin dependency of the Peltier coefficient inside the ferromagnetic material. We explored the effect in a specifically designed spin valve pillar structure by measuring the temperature using an electrically isolated thermocouple. The difference in heat flow between the two magnetic configurations leads to a change in temperature. With the help of 3-D finite element modeling, we extracted permalloy spin Peltier coefficients in the range of -0.9 to -1.3 mV. These results enable magnetic control of heat flow and provide new functionality for future spintronic devices.

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arXiv2011

Non-linear spin Seebeck effect due to spin-charge interaction in graphene

The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other degrees of freedom, going beyond the prototypical electrical spin injection and detection using magnetic contacts. Such interactions have been explored recently, for example, by using spin Hall or spin thermoelectric effects. Here we present the detection of non-local spin signals using non-magnetic detectors, via an as yet unexplored non-linear interaction between spin and charge. In analogy to the Seebeck effect, where a heat current generates a charge potential, we demonstrate that a spin current in a paramagnet leads to a charge potential, if the conductivity is energy dependent. We use graphene as a model system to study this effect, as recently proposed. The physical concept demonstrated here is generally valid, opening new possibilities for spintronics.

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arXiv2011

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

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