arXiv subjects

Bart Kuyken

Publications and source records attributed to Bart Kuyken.

At least 37 records · Page 2Linked to original sources

arXiv2020

Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser

We present the detailed characterization of the phase dynamics of a telecom hybrid III-V-on-silicon passively mode-locked laser with a ring cavity. We explore the various regimes of operation as a function of gain current and saturable absorber bias voltage. We use a stepped-heterodyne measurement to quantify the spectral chirp and reconstruct the pulse envelop. With this technique we are able to identify regimes of near-transform-limited operation and we assess the degradation of mode-locking in the comb phase relationship when saturable absorber bias voltage is changed. Finally, we present a preliminary study of the phase-locking in hybrid mode-locked operation and demonstrate transform-limited pulses.

physics.optics↗

arXiv2020

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

Compact chip-scale comb sources are of significant interest for many practical applications. Here, we experimentally study the generation of supercontinuum (SC) in an axially varying integrated waveguide. We show that the local tuning of the dispersion enables the continuous blue shift of dispersive waves thanks to their trapping by the strongly compressed pump pulse. This mechanism provides new insight into supercontinuum generation in a dispersion varying integrated waveguide. Pumped close to 2.2 $μ$m in the femtosecond regime and at a pulse energy of $\sim$ 4 pJ, the output spectrum extends from 1.1 $μ$m up to 2.76 $μ$m and shows good coherence properties. Octave-spanning SC is also observed at input energy as low as $\sim$ 0.9 pJ. We show that the supercontinuum is more robust against variations of the input pulse parameters and is also spectrally flatter in our numerically optimized waveguide than in fixed-width waveguides. This research demonstrates the potential of dispersion varying waveguides for coherent SC generation and paves the way for integrated low power applications, such as chip-scale frequency comb generation, precision spectroscopy, optical frequency metrology, and wide-band wavelength division multiplexing in the near-infrared.

physics.optics↗

arXiv2020

An on-chip III-V-semiconductor-on-silicon laser frequency comb for gas-phase molecular spectroscopy in real-time

Frequency combs, spectra of evenly-spaced narrow phase-coherent laser lines, have revolutionized precision measurements. On-chip frequency comb generators hold much promise for fully-integrated instruments of time and frequency metrology. While outstanding developments are being reported with Kerr, quantum cascade and microring electro-optic combs, the field of high-resolution multiplexed gas-phase spectroscopy has remained inaccessible to such devices, because of their large line spacing, their small number of usable comb lines, the intensity variations between their comb lines, and their limited photonic integrability. Here we identify a path to broadband gas-phase spectroscopy on a chip. We design a low-noise III-V-on-silicon comb generator on a photonic chip, that emits a flat-top spectrum of 1400 lines at a repetition frequency of 1.0 GHz, a feature never approached by other ultra-miniaturized comb synthesizers. With dual-comb spectroscopy, our near-infrared electrically-pumped laser records high-resolution (1 GHz) sensitive multiplexed spectra with resolved comb lines, in times as short as 5 microseconds. Isotope-resolved 12C/13C detection in carbon monoxide is performed within 1 millisecond. With further developments, entire high-resolution spectroscopy laboratories-on-a-chip may be manufactured at the wafer scale. In environmental sensing, broad networks of spectrometers could be densely field-deployed to simultaneously monitor, in real time, sources and sinks of greenhouse gases, industrial pollution or noxious emissions of motor vehicles.

physics.optics↗

arXiv2020

Second Harmonic Generation Enabled by Longitudinal Electric Field Components in Photonic Wire Waveguides

We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion efficiency and confirm the role played by the longitudinal components through the excitation of an antisymmetric second harmonic higher order mode.

physics.optics↗

arXiv2020

Full Vectorial Modeling of Second Harmonic Generation in III-V-on-insulator Nanowires

We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.

physics.optics↗

arXiv2018

Silicon Waveguides for High-Speed Optical Transmissions and Parametric Conversion around 2 $μ$m

We show that single mode Si waveguides efficiently sustain high-speed transmissions at 2 $μ$m. We report the transmission of a 10 Gbit/s signal over 7 cm with a power penalty below 1 dB. Parametric conversion in the continuous wave regime is also demonstrated using the same waveguide structure with a conversion window over 70 nm and an efficiency as high as-25 dB that can be further increased in the pulsed pump regime.

physics.optics↗

arXiv2018

Nanophotonic Pockels modulators on a silicon nitride platform

Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($α\approx 1$ dB/cm). A $V_πL\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

physics.app-ph↗

arXiv2018

Highly Non-Degenerate Two-Photon Absorption in Silicon Wire Waveguides

Non-degenerate two-photon absorption (TPA) is investigated in a nanophotonic silicon waveguide in a configuration such that the dispersion of the nonlinear absorption and refraction cannot be neglected. It is shown that a signal wave can strongly be absorbed by cross-TPA by interaction with a low energy pump pulse (1.2\,pJ), close to the half-bandgap and experiencing low nonlinear absorption. The experiments are very well reproduced by numerical simulations of two-coupled generalized nonlinear Schrödinger equations (GNLSE), validating the usual approximation made to compute the cross nonlinear coefficients in indirect-gap semiconductors. We show that the nonlinear dynamics can be well described by a single GNLSE despite the wavelength separation between the pump and the signal waves. We also demonstrate that in silicon wire waveguides and contrary to optical fibers, the dispersion of the nonlinear absorption is much larger than the dispersion of the Kerr effect. This could have an impact in the design of all-optical functions based on cross-TPA, as well as on the study of supercontinuum and frequency comb generation in integrated semiconductor-on-insulator platforms.

physics.optics↗

arXiv2018

Physical origin of higher-order soliton fission in nanophotonic semiconductor waveguides

Supercontinuum generation in Kerr media has become a staple of nonlinear optics. It has been celebrated for advancing the understanding of soliton propagation as well as its many applications in a broad range of fields. Coherent spectral broadening of laser light is now commonly performed in laboratories and used in commercial white light sources. The prospect of miniaturizing the technology is currently driving experiments in different integrated platforms such as semiconductor on insulator waveguides. Central to the spectral broadening is the concept of higher-order soliton fission. While widely accepted in silica fibers, the dynamics of soliton decay in semiconductor waveguides is yet poorly understood. In particular, the role of nonlinear loss and free carriers, absent in silica, remains an open question. Here, through experiments and simulations, we show that nonlinear loss is the dominant perturbations in wire waveguides, while free-carrier dispersion is dominant in photonic crystal waveguides.

physics.optics↗

arXiv2017

Electrically Tunable Optical Nonlinearities in Graphene-Covered SiN Waveguides Characterized by Four-Wave Mixing

We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In the vicinity of the interband absorption edge ($2|E_F|\approx \hbarω$) a peak value of the waveguide nonlinear parameter of $\approx$ 6400 m$^{-1}$W$^{-1}$, corresponding to a graphene nonlinear sheet conductivity $|σ_s^{(3)}|\approx4.3\cdot 10^{-19}$ A m$^2$V$^{-3}$ is measured.

physics.optics↗

arXiv2015

Net on-chip Brillouin gain based on suspended silicon nanowires

The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.

physics.optics↗

arXiv2015

On-chip optical event horizon

The interaction of waves in nonlinear Kerr waveguides are, under some circumstances, similar to the physics occurring at the horizon of black and white holes. Here, we investigate this analogy in an integrated nonlinear photonic structure through the reflection of a continuous wave on an intense pulse. The resulting frequency conversion of the continuous wave is experimentally demonstrated in a silicon photonic wire waveguide and confirmed by simulations using the generalized nonlinear Schrödinger equation. This demonstration paves the way to efficient all-optical signal processing functionality integrated on a CMOS-compatible waveguide platform.

physics.optics↗

arXiv2014

Coherent supercontinuum generation in a silicon photonic wire in the telecommunication wavelength range

We demonstrate a fully coherent supercontinuum spectrum spanning 500 nm from a silicon-on-insulator photonic wire waveguide pumped at 1575 nm wavelength. An excellent agreement with numerical simulations is reported. The simulations also show that a high level of two-photon absorption can essentially enforce the coherence of the spectral broadening process irrespective of the pump pulse duration.

physics.optics↗

arXiv2014

Interaction between light and highly confined hypersound in a silicon photonic nanowire

In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic wires. Here we demonstrate, for the first time, such a giant overlap between near-infrared light and gigahertz sound co-localized in a small-core silicon wire. The wire is supported by a tiny pillar to block the path for external phonon leakage, trapping $\mathbf{10} \; \textbf{GHz}$ phonons in an area below $\mathbf{0.1 \; \boldsymbolμ}\textbf{m}^{\mathbf{2}}$. Since our geometry can be coiled up to form a ring cavity, it paves the way for complete fusion between the worlds of cavity optomechanics and Brillouin scattering. The result bodes well for the realization of low-footprint optically-pumped lasers/sasers and delay lines on a densely integrated silicon chip.

physics.optics↗

arXiv2014

An octave spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations.

physics.optics↗

arXiv2014

Dispersive wave emission and supercontinuum generation in a silicon wire waveguide pumped around the 1550 nm telecommunication wavelength

We experimentally and numerically study dispersive wave emission, soliton fission and supercontinuum generation in a silicon wire at telecommunication wavelengths. Through dispersion engineering, we experimentally confirm a previously reported numerical study [1] and show that the emission of resonant radiation from the solitons can lead to the generation of a supercontinuum spanning over 500 nm. An excellent agreement with numerical simulations is observed.

physics.optics↗

arXiv2013

Analysis of enhanced stimulated Brillouin scattering in silicon slot waveguides

Stimulated Brillouin scattering has attracted renewed interest with the promise of highly tailorable integration into the silicon photonics platform. However, significant Brillouin amplification in silicon waveguides has yet to be shown. In an effort to engineer a structure with large photon-phonon coupling, we analyzed both forward and backward Brillouin scattering in high-index-contrast silicon slot waveguides. The calculations predict that gradient forces enhance the Brillouin gain in narrow slots. We estimate a currently feasible gain of about $10^{5} \, \text{W}^{-1}\text{m}^{-1}$, which is an order of magnitude larger than in a stand-alone silicon wire. Such efficient coupling could enable a host of Brillouin technologies on a mass-producible silicon chip.

cond-mat.mes-hall↗

arXiv2012

Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation

Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, including waveguides, vertical grating couplers, microcavities, and electrooptic modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to convert mid-IR photons to electrical currents. The cryogenic or multi-stage thermo-electric cooling required to suppress dark current noise, exponentially dependent upon the ratio Eg/kT, can limit the development of small, low-power, and low-cost integrated optical systems for the mid-IR. However, if the mid-IR optical signal could be spectrally translated to shorter wavelengths, for example within the near-infrared telecom band, photodetectors using wider bandgap semiconductors such as InGaAs or Ge could be used to eliminate prohibitive cooling requirements. Moreover, telecom band detectors typically perform with higher detectivity and faster response times when compared with their mid-IR counterparts. Here we address these challenges with a silicon-integrated approach to spectral translation, by employing efficient four-wave mixing (FWM) and large optical parametric gain in silicon nanophotonic wires.

physics.optics↗