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Bing Huang

Publications and source records attributed to Bing Huang.

At least 91 records · Page 5Linked to original sources

Alchemical and structural distribution based representation for improved QML

We introduce a representation of any atom in any chemical environment for the generation of efficient quantum machine learning (QML) models of common electronic ground-state properties. The representation is based on scaled distribution functions explicitly accounting for elemental and structural degrees of freedom. Resulting QML models afford very favorable learning curves for properties of out-of-sample systems including organic molecules, non-covalently bonded protein side-chains, (H$_2$O)$_{40}$-clusters, as well as diverse crystals. The elemental components help to lower the learning curves, and, through interpolation across the periodic table, even enable "alchemical extrapolation" to covalent bonding between elements not part of training, as evinced for single, double, and triple bonds among main-group elements.

physics.chem-ph↗

Prediction of Ideal Topological Semimetals with Triply Degenerate Points in NaCu$_3$Te$_2$ Family

Triply degenerate points (TDPs) in band structure of a crystal can generate novel TDP fermions without high-energy counterparts. Although identifying ideal TDP semimetals, which host clean TDP fermions around the Fermi level ($E_F$) without coexisting of other quasiparticles, is critical to explore the intrinsic properties of this new fermion, it is still a big challenge and has not been achieved up to now. Here, we disclose an effective approach to search for ideal TDP semimetals via selective band crossing between antibonding $s$ and bonding $p$ orbitals along a line in the momentum space with $C_{3v}$ symmetry. Applying this approach, we have successfully identified the NaCu$_3$Te$_2$ family of compounds to be ideal TDP semimetals, where two and only two pairs of TDPs are located around the $E_F$. Moreover, we reveal an interesting mechanism to modulate energy splitting between a pair of TDPs, and illustrate the intrinsic features of TDP Fermi arcs in these ideal TDP semimetals.

cond-mat.mtrl-sci↗

Machine learning prediction errors better than DFT accuracy

We investigate the impact of choosing regressors and molecular representations for the construction of fast machine learning (ML) models of thirteen electronic ground-state properties of organic molecules. The performance of each regressor/representation/property combination is assessed using learning curves which report out-of-sample errors as a function of training set size with up to $\sim$117k distinct molecules. Molecular structures and properties at hybrid density functional theory (DFT) level of theory used for training and testing come from the QM9 database [Ramakrishnan et al, {\em Scientific Data} {\bf 1} 140022 (2014)] and include dipole moment, polarizability, HOMO/LUMO energies and gap, electronic spatial extent, zero point vibrational energy, enthalpies and free energies of atomization, heat capacity and the highest fundamental vibrational frequency. Various representations from the literature have been studied (Coulomb matrix, bag of bonds, BAML and ECFP4, molecular graphs (MG)), as well as newly developed distribution based variants including histograms of distances (HD), and angles (HDA/MARAD), and dihedrals (HDAD). Regressors include linear models (Bayesian ridge regression (BR) and linear regression with elastic net regularization (EN)), random forest (RF), kernel ridge regression (KRR) and two types of neural net works, graph convolutions (GC) and gated graph networks (GG). We present numerical evidence that ML model predictions deviate from DFT less than DFT deviates from experiment for all properties. Furthermore, our out-of-sample prediction errors with respect to hybrid DFT reference are on par with, or close to, chemical accuracy. Our findings suggest that ML models could be more accurate than hybrid DFT if explicitly electron correlated quantum (or experimental) data was available.

physics.chem-ph↗

Creation of Half-metallic f -orbital Dirac Fermion with Superlight Elements in Orbital-Designed Molecular Lattice

Magnetism in solids generally originates from the localized $d$- or $f$-orbitals that are hosted by heavy transition-metal elements. Here, we demonstrate a novel mechanism for designing half-metallic $f$-orbital Dirac fermion from superlight $sp$-elements. Combining first-principles and model calculations, we show that bare and flat-band-sandwiched (FBS) Dirac bands can be created when C$_{20}$ molecules are deposited into a 2D hexagonal lattice, which are composed of $f$-molecular orbitals (MOs) derived from $sp$-atomic orbitals (AOs). Furthermore, charge doping of the FBS Dirac bands induces spontaneous spin-polarization, converting the system into a half-metallic Dirac state. Based on this discovery, a model of spin field effect transistor is proposed to generate and transport 100\% spin-polarized carriers. Our finding illustrates a novel concept to realize exotic quantum states by manipulating MOs, instead of AOs, in orbital-designed molecular crystal lattices.

cond-mat.mes-hall↗

Bending Strain Engineering of Spin Transport in Quantum Spin Hall Systems: Topological Nano-mechanospintronics

Quantum spin Hall (QSH) system can exhibit exotic spin transport phenomena, mediated by its topological edge states. Here a novel concept of bending strain engineering to tune the spin transport properties of a QSH system is demonstrated by both model and first-principles calculations. Interestingly, we discover that bending strain can be used to mitigate the spin conservation of a QSH system to generate a non-zero spin current (SC), meanwhile the preservation of time reversal symmetry renders its edge states topologically protected to transport robust SC without back scattering. This novel physics mechanism can be applied to effectively tune the SC and spin Hall current in a QSH system by control of its bending curvature. Furthermore, the realization of QSH systems with controllable curvature can be achieved by the concept of "topological nanomechnical architecture". Taking Bi/Cl/Si(111) as a material example, we demonstrate that the relative spin orientations between two edge states of a Bi/Cl/Si(111) film can indeed be tuned dramatically by its self-bending behaviors induced by the pre-designed inherent strain. Therefore, this concept of "bending strain engineering of spins" via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.

cond-mat.mes-hall↗

Understanding molecular representations in machine learning: The role of uniqueness and target similarity

The predictive accuracy of Machine Learning (ML) models of molecular properties depends on the choice of the molecular representation. Based on the postulates of quantum mechanics, we introduce a hierarchy of representations which meet uniqueness and target similarity criteria. To systematically control target similarity, we rely on interatomic many body expansions, as implemented in universal force-fields, including Bonding, Angular, and higher order terms (BA). Addition of higher order contributions systematically increases similarity to the true potential energy and predictive accuracy of the resulting ML models. We report numerical evidence for the performance of BAML models trained on molecular properties pre-calculated at electron-correlated and density functional theory level of theory for thousands of small organic molecules. Properties studied include enthalpies and free energies of atomization, heatcapacity, zero-point vibrational energies, dipole-moment, polarizability, HOMO/LUMO energies and gap, ionization potential, electron affinity, and electronic excitations. After training, BAML predicts energies or electronic properties of out-of-sample molecules with unprecedented accuracy and speed.

physics.chem-ph↗

Steric effects of CO2 binding to transition metal-benzene complexes: a first-principles study

Using density functional theory (DFT) calculations, we investigated the adsorption of CO2 molecules on 3d transition metal (TM)-benzene complexes. Our calculations show that the maximum number of CO2 molecules adsorbable on Sc or Ti atoms is three, but the 18-electron rule predicts it should be four. The 18-electron rule is generally successful in predicting the maximum H2 adsorption number for TM atoms including Sc or Ti atoms. We found that the 18-electron rule fails to correctly predict CO2 binding on Sc- or Ti-benzene complexes because CO2 binding, in contrast to H2 binding, requires additional consideration for steric hindrance due to the large bond length of CO2. We calculated the occupation function for CO2 using the Tolman cone angle, which shows that three CO2 molecules fully occupy the available space around Sc- and Ti-benzene complexes. This estimation is the same maximum CO2 adsorption number predicted by DFT calculations. Therefore, we propose that the occupation function for CO2 using the Tolman cone angle is an efficient model for evaluating steric hindrance of CO2 adsorption on a surface.

physics.chem-ph↗

Structural stability of lattice-matched heterovalent semiconductor superlattices

Lattice-matched heterovalent alloys and superlattices have some unique physical properties. For example, their band gap can change by a large amount without significant change in their lattice constants, thus they have great potential for optelectronic applications. Using first-principles total energy calculation and Monte Carlo simulation as well as lattice harmonic expansion, we systematically study the stability of the heterovalent superlattices. We show that the chemical trend of stability of lattice-matched heterovalent superlattices is significantly different from lattice-mismatched isovalent superlattices, because for lattice-mismatched isovalent superlattices the stability is mostly determined by strain, whereas for lattice-matched nonisovalent superlattices the interfacial energy depend not only on the bond energy but also on the Coulomb energy derived from donor- and acceptor-like wrong bonds. In the short-period heterovalent superlattices, the abrupt [111] interface has the lowest energy even though it is polar, whereas for the long-period heterovalent superlattices, the [110] interface has the lowest energy. On the contrary, [201] superlattices are usually the most stable for lattice-mismatched isovalent superlattices.

cond-mat.mtrl-sci↗

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi-direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells.

cond-mat.mtrl-sci↗

Ordered Semiconducting Nitrogen-Graphene Alloys

The interaction between substitutional nitrogen atoms in graphene is studied by performing first principles calculations. The nearest neighbor interaction between nitrogen dopants is highly repulsive because of the strong electrostatic repulsion between nitrogen atoms, which prevents the full phase separation in nitrogen doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pairs due to the anisotropy charge redistribution induced by nitrogen doping. We reveal two stable semiconducting ordered N doped graphene structures C3N and C12N through the cluster expansion technique and particle swarm optimization method. In particular, C12N has a direct band gap of 0.98 eV. The heterojunctions between C12N and graphene nanoribbons might be promising organic solar cells.

cond-mat.mtrl-sci↗

Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

Using physical insights and advanced first-principles calculations, we suggest that corundum is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of » 180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which could realize large ON/OFF ratio and high carrier mobility in graphene transistors without additional band gap engineering and significant reduction of transport properties. Moreover, the band gaps of graphene/Al2O3 system could be tuned by an external electric field for practical applications.

cond-mat.mtrl-sci↗

Controlling doping in graphene through a SiC substrate: A first-principles study

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming doping difficulty in graphene via substrate is reported.We find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and the conducting channel. Finally, we show that a similar idea can also be used to control magnetic properties, for example, induce a half-metallic state in the epitaxial graphene without magnetic impurity doping.

cond-mat.mes-hall↗

Strain Control of Magnetism in Transition-Metal-Atom Decorated Graphene

We report a strain-controlled tuning of magnetism in transition-metal-atom-decorated graphene. Our first-principles calculations demonstrate that strain can lead to a sudden change in the magnetic configuration of a transition metal (TM) adatom and the local atomic structure in the sur- rounding graphene layer, which have a dramatic effect on the effective exchange coupling between neighboring TM atoms. A strong spin-dependent hybridization between TM d and graphene 1/4 orbital states, derived from the orbital selection rule of the local lattice symmetry, is responsible for the determination of the local electronic and magnetic structure. Our results indicate that the strain can be an effective way to control the magnetism of atomic-scale nanostructures, where the reliable control of their magnetic states is a key step for the future spintronic applications.

cond-mat.mes-hall↗

Edge Stability of BN sheets and Its Application for Designing Hybrid BNC Structures

First-principles investigations on the edge energies and edge stresses of single-layer hexagonal boron-nitride (BN) are presented. The armchair edges of BN nanoribbons (BNNRs) are more stable in energy than zigzag ones. Armchair BNNRs are under compressive edge stress while zigzag BNNRs are under tensile edge stress. The intrinsic spin-polarization and edge saturation play important roles in modulating the edge stability of BNNRs. The edge energy difference between BN and graphene could be used to guide the design of the specific hybrid BNC structures: in an armchair BNC nanoribbon (BNCNR), BN domains are expected to grow outside of C domains, while the opposite occurs in a zigzag BNCNR. More importantly, armchair BNCNRs can reproduce unique electronic properties of armchair graphene nanoribbons (GNRs), which are expected to be robust against edge functionalization or disorder. Within certain C/BN ratio, zigzag BNCNRs may exhibit intrinsic half-metallicity without any external constraints. These unexpected electronic properties of BNCNRs may offer unique opportunities to develop nanoscale electronics and spintronics beyond individual graphene and BN. Generally, these principles for designing BNC could be extended to other hybrid nanostructures.

cond-mat.mtrl-sci↗

Releasing H2 molecules with a partial pressure difference without the use of temperature

Using the pseudopotential density functional method as well as equilibrium thermodynamic functions, we explore the process of releasing H2 molecules adsorbed on a transition metal atom caused by the hydrogen-ammonia partial pressure difference. The H2 molecules bind to a transition metal atom at H2 pressure-NH3 pressure-temperature 50 atm-10-9 atm-25 °C, and they are released at 3 atm-10-6 atm-25 °C. This process involves the same mechanism responsible for carbon monoxide poisoning of hemoglobin with the O2-CO partial pressure difference. We show that our findings can be applicable to an approach to induce hydrogen desorption on nanostructured hydrogen storage materials without the need for increasing temperature.

cond-mat.mtrl-sci↗

Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study

Using first-principles calculations, we examine the electronic and magnetic properties of partially open zigzag carbon nanotube (CNT) superlattices. It is found that depending on their opening degree, these superlattices can exhibit multiple localized states around the Fermi energy. More importantly, some electronic states confined in some parts of the structure even have special magnetic orderings. We demonstrate that, as a proof of principle, some partially open zigzag CNT superlattices are by themselves giant (100%) magnetoresistive devices. Furthermore, the localized(and spin-polarized) states as well as the band gaps of the superlattices could be further modulated by external electric fields perpendicular to the tube axis, and a bias voltage along the tube axis may be used to control the conductance of two spin states. We believe that these results will open the way to the production of novel nanoscale electronic and spintronic devices.

cond-mat.mtrl-sci↗

The Half-Metallicity of Zigzag Graphene Nanoribbons with Asymmetric Edge Terminations

The spin-polarized electronic structure and half-metallicity of zigzag graphene nanoribbons (ZGNRs) with asymmetric edge terminations are investigated by using first principles calculations. It is found that compared with symmetric hydrogen-terminated counterparts, such ZGNRs maintain a spin-polarized ground state with the anti-ferromagnetic configuration at opposite edges, but their energy bands are no longer spin degenerate. In particular, the energy gap of one spin orientation decreases remarkably. Consequently, the ground state of such ZGNRs is very close to half-metallic state, and thus a smaller critical electric field is required for the systems to achieve the half-metallic state. Moreover, two kinds of studied ZGNRs present massless Dirac-fermion band structure when they behave like half-metals.

cond-mat.mtrl-sci↗

Ab initio study of beryllium-decorated fullerenes for hydrogen storage

We have found that a beryllium (Be) atom on nanostructured materials with H2 molecules generates a Kubas-like dihydrogen complex [H. Lee et al. arXiv:1002.2247v1 (2010)]. Here, we investigate the feasibility of Be-decorated fullerenes for hydrogen storage using ab initio calculations. We find that the aggregation of Be atoms on pristine fullerenes is energetically preferred, resulting in the dissociation of the dihydrogen. In contrast, for boron (B)-doped fullerenes, Be atoms prefer to be individually attached to B sites of the fullerenes, and a maximum of one H2 molecule binds to each Be atom in a form of dihydrogen with a binding energy of ~0.3 eV. Our results show that individual dispersed Be-decorated B-doped fullerenes can serve as a room-temperature hydrogen storage medium.

cond-mat.mtrl-sci↗