arXiv subjects

Bing Huang

Publications and source records attributed to Bing Huang.

99 records · Page 6Linked to original sources

arXiv2010

Towards Graphene Nanoribbon-based Electronics

The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress of experimental fabrication of GNRs, and the theoretical and experimental investigations of physical properties and device applications of GNRs. We also briefly discuss the research efforts on the spin polarization of GNRs in relation to the edge states.

cond-mat.mes-hall↗

arXiv2010

Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principles Study

We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the zigzag edge stress is noticeably reduced by spin polarization. Such quantum stress effects in turn manifest in mechanical edge twisting and warping instability, showing features not captured by empirical potentials or continuum theory. Edge adsorption of H and Stone-Wales reconstruction are shown to provide alternative mechanisms in relieving the edge compression and hence to stabilize the planar edge structure.

cond-mat.mes-hall↗

arXiv2010

Beryllium-dihydrogen complexes on nanostructures

Using the pseudopotential density functional method, we find that a Be atom on a nanostructure with H2 molecules forms a Be-dihydrogen complex through the hybridization of the Be s or p orbits with the H2 sigma orbits and the binding energy of the H2 molecules is in the range of ~0.3 - 0.8 eV/H2. We also study Be-dihydrogen complexes on various nanostructures and demonstrate the feasibility of the application of the complexes to a hydrogen storage medium that operates near room temperature and ambient pressure.

cond-mat.mtrl-sci↗

arXiv2009

Electronic and Magnetic Properties of Partially-Open Carbon Nanotubes

On the basis of the spin-polarized density functional theory calculations, we demonstrate that partially-open carbon nanotubes (CNTs) observed in recent experiments have rich electronic and magnetic properties which depend on the degree of the opening. A partially-open armchair CNT is converted from a metal to a semiconductor, and then to a spin-polarized semiconductor by increasing the length of the opening on the wall. Spin-polarized states become increasingly more stable than nonmagnetic states as the length of the opening is further increased. In addition, external electric fields or chemical modifications are usable to control the electronic and magnetic properties of the system. We show that half-metallicity may be achieved and the spin current may be controlled by external electric fields or by asymmetric functionalization of the edges of the opening. Our findings suggest that partially-open CNTs may offer unique opportunities for the future development of nanoscale electronics and spintronics.

cond-mat.mtrl-sci↗

arXiv2008

Adsorption of gas molecules on graphene nanoribbons and its implication for nano-scale molecule sensor

We have studied the adsorption of gas molecules (CO, NO, NO2, O2, N2, CO2, and NH3) on graphene nanoribbons (GNRs) using first principles methods. The adsorption geometries, adsorption energies, charge transfer, and electronic band structures are obtained. We find that the electronic and transport properties of the GNR with armchair-shaped edges are sensitive to the adsorption of NH3 and the system exhibits n type semiconducting behavior after NH3 adsorption. Other gas molecules have little effect on modifying the conductance of GNRs. Quantum transport calculations further indicate that NH3 molecules can be detected out of these gas molecules by GNR based sensor.

cond-mat.mtrl-sci↗

arXiv2008

Suppression of spin-polarization in graphene nanoribbon by edge defect and impurity

We investigate the effect of edge defects (vacancies) and impurities (substitutional dopants) on the robustness of spin-polarization in graphene nanoribbons (GNRs) with zigzag edges, using density-functional-theory calculations. We found that the stability of the spin state and its magnetic moments decrease continuously with increasing concentration of defects or impurities. The system generally becomes non-magnetic at the concentration of one edge defect (impurity) per 10 angstrom. The spin suppression is shown to be caused by reduction and removal of edge states at the Fermi energy. Our analysis implies an important criterion on the GNR samples for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2008

Graphene Nanoribbon based T Junctions

Graphene nanoribbons (GNRs) based T junctions were designed and studied in this paper. These junctions were made up of shoulders (zigzag GNRs) joined with stems (armchair GNRs). We demonstrated the intrinsic transport properties and effective boron (or nitrogen) doping of the junctions by using first principles quantum transport simulation. Several interesting results were found: i) The I-V characteristics of the pure-carbon T junctions were shown to obey Ohm law and the electrical conductivity of the junction depends on the height of the stem sensitively. ii) boron (or nitrogen) doping on the stems doesnt change the Ohm law of the T junctions, but the result is opposite when doping process occurs at the shoulders. This feature could make such quasi-2D T junction a possible candidate for nanoscale junction devices in a 2D network of nanoelectronic devices in which conducting pathways can be controlled.

cond-mat.mtrl-sci↗

arXiv2007

Making a field effect transistor on a single graphene nanoribbon by selective doping

Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.

cond-mat.mtrl-sci↗

arXiv2007

Chemical Functionalization of Graphene Nanoribbons by Carboxyl Groups on Stone-Wales Defects

Using the density functional theory, we have demonstrated the chemical functionalization of semiconducting graphene nanoribbons (GNRs) with Stone-Wales (SW) defects by carboxyl (COOH) groups. It is found that the geometrical structures and electronic properties of the GNRs changed significantly, and the electrical conductivity of the system could be considerably enhanced by mono-adsorption and double-adsorption of COOH, which sensitively depends upon the axial concentration of SW defects COOH pairs (SWDCPs). With the increase of the axial concentration of SWDCPs, the system would transform from semiconducting behavior to p-type metallic behavior. This fact makes GNRs a possible candidate for chemical sensors and nanoelectronic devices based on graphene nanoribbons.

cond-mat.mtrl-sci↗