arXiv subjects

Brian Skinner

Publications and source records attributed to Brian Skinner.

At least 73 records · Page 4Linked to original sources

arXiv2016

Interlayer excitons with tunable dispersion relation

Interlayer excitons, comprising an electron in one material bound by Coulomb attraction to a hole in an adjacent material, are composite bosons that can assume a variety of many-body phases. The phase diagram of the bosonic system is largely determined by the dispersion relation of the bosons, which itself arises as a combination of the dispersion relations of the electron and hole separately. Here I show that in situations where either the electron or the hole has a non-monotonic, "Mexican hat-shaped" dispersion relation, the exciton dispersion relation can have a range of qualitatively different forms, each corresponding to a different many-body phase at low temperature. This diversity suggests a novel platform for continuously tuning between different quantum phases using an external field.

cond-mat.mes-hall↗

arXiv2015

Optimal Strategy in Basketball

This book chapter reviews some of the major principles associated with optimal strategy in basketball. In particular, we consider the principles of allocative efficiency (optimal allocation of shots between offensive options), dynamic efficiency (optimal shot selection in the face of pressure from the shot clock), and the risk/reward tradeoff (strategic manipulation of outcome variance). For each principle, we provide a simple example of a strategic problem and show how it can be described analytically. We then review general analytical results and provide an overview of existing statistical studies. A number of open challenges in basketball analysis are highlighted.

physics.soc-ph↗

arXiv2015

Correlation effects in the capacitance of a gated carbon nanotube

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that when the average spacing $n^{-1}$ between electrons within the low density 1-dimensional electron gas (1DEG) in the CNT is larger than the physical separation $d$ between the CNT and the gate, the enhancement of capacitance is expected to be big. A recent Coulomb blockade experiment[1], however, has observed no obvious increase of capacitance even at very low electron density. We show that this smaller capacitance can be understood as the result of the confining potential produced by the potential difference between the source/drain electrodes and the gate, which compresses the 1DEG when the electron number decreases. We suggest that by profiling the potential with the help of multiple split gates, one can return to the case of a uniform 1DEG with anomalously large capacitance.

cond-mat.str-el↗

arXiv2015

The price of anarchy is maximized at the percolation threshold

When many independent users try to route traffic through a network, the flow can easily become suboptimal as a consequence of congestion of the most efficient paths. The degree of this suboptimality is quantified by the so-called "price of anarchy" (POA), but so far there are no general rules for when to expect a large POA in a random network. Here I address this question by introducing a simple model of flow through a network with randomly-placed "congestible" and "incongestible" links. I show that the POA is maximized precisely when the fraction of congestible links matches the percolation threshold of the lattice. Both the POA and the total cost demonstrate critical scaling near the percolation threshold.

cond-mat.dis-nn↗

arXiv2014

Universal power law governing pedestrian interactions

Human crowds often bear a striking resemblance to interacting particle systems, and this has prompted many researchers to describe pedestrian dynamics in terms of interaction forces and potential energies. The correct quantitative form of this interaction, however, has remained an open question. Here, we introduce a novel statistical-mechanical approach to directly measure the interaction energy between pedestrians. This analysis, when applied to a large collection of human motion data, reveals a simple power law interaction that is based not on the physical separation between pedestrians but on their projected time to a potential future collision, and is therefore fundamentally anticipatory in nature. Remarkably, this simple law is able to describe human interactions across a wide variety of situations, speeds and densities. We further show, through simulations, that the interaction law we identify is sufficient to reproduce many known crowd phenomena.

physics.soc-ph↗

arXiv2014

Carrier Transport in Films of Alkyl-Ligand-Terminated Silicon Nanocrystals

Silicon nanocrystals (Si NCs) have shown great promise for electroluminescent and photoluminescent applications. In order to optimize the properties of Si NC devices, however, electronic transport in Si NCs films needs to be thoroughly understood. Here we present a systematic study of the temperature and electric field dependence of conductivity in films of alkyl-ligand-terminated Si NCs, which to date have shown the highest potential for device applications. Our measurements suggest that the conductivity is limited by the ionization of rare NCs containing donor impurities. At low bias, this ionization is thermally activated, with an ionization energy equal to twice the NC charging energy. As the bias is increased, the ionization energy is reduced by the electric field, as determined by the Poole-Frenkel effect. At large bias and sufficiently low temperature, we observe cold ionization of electrons from donor-containing NCs, with a characteristic tunneling length of about 1 nm. The temperature- and electric-field-dependent conductance measurements presented here provide a systematic and comprehensive picture for electron transport in lightly doped nanocrystal films.

cond-mat.mes-hall↗

arXiv2014

Coulomb disorder in three-dimensional Dirac systems

In three-dimensional materials with a Dirac spectrum, weak short-ranged disorder is essentially irrelevant near the Dirac point. This is manifestly not the case for Coulomb disorder, where the long-ranged nature of the potential produced by charged impurities implies large fluctuations of the disorder potential even when impurities are sparse, and these fluctuations are screened by the formation of electron/hole puddles. In this paper I present a theory of such nonlinear screening of Coulomb disorder in three-dimensional Dirac systems, and I derive the typical magnitude of the disorder potential, the corresponding density of states, and the size and density of electron/hole puddles. The resulting conductivity is also discussed.

cond-mat.dis-nn↗

arXiv2014

Bound state energy of a Coulomb impurity in gapped bilayer graphene: "Hydrogen atom with a Mexican hat"

Application of a perpendicular electric field induces a band gap in bilayer graphene, and it also creates a "Mexican hat" structure in the dispersion relation. This structure has unusual implications for the hydrogen-like bound state of an electron to a Coulomb impurity. We calculate the ground state energy of this hydrogen-like state as a function of the applied interlayer voltage and the effective fine structure constant. Unlike in the normal hydrogen atom, the resulting wavefunction has many nodes even in the ground state. Further, the electron state undergoes "atomic collapse" into the Dirac continuum both at small and large voltage.

cond-mat.mes-hall↗

arXiv2013

The effect of electron dielectric response on the quantum capacitance of graphene in a strong magnetic field

The quantum capacitance of graphene can be negative when the graphene is placed in a strong magnetic field, which is a clear experimental signature of positional correlations between electrons. Here we show that the quantum capacitance of graphene is also strongly affected by its dielectric polarizability, which in a magnetic field is wave vector-dependent. We study this effect both theoretically and experimentally. We develop a theory and numerical procedure for accounting for the graphene dielectric response, and we present measurements of the quantum capacitance of high-quality graphene capacitors on boron nitride. Theory and experiment are found to be in good agreement.

cond-mat.mes-hall↗

arXiv2013

Effect of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to VRH at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential as one moves from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

cond-mat.mes-hall↗

arXiv2013

Universal behavior of repulsive two-dimensional fermions in the vicinity of the quantum freezing point

We show by a meta-analysis of the available Quantum Monte-Carlo (QMC) results that two-dimensional fermions with repulsive interactions exhibit universal behavior in the strongly-correlated regime, and that their freezing transition can be described using a quantum generalization of the classical Hansen-Verlet freezing criterion. We calculate the liquid-state energy and the freezing point of the 2D dipolar Fermi gas (2DDFG) using a variational method by taking ground state wave functions of 2D electron gas (2DEG) as trial states. A comparison with the recent fixed-node diffusion Monte-Carlo analysis of the 2DDFG shows that our simple variational technique captures more than 95% of the correlation energy, and predicts the freezing transition within the uncertainty bounds of QMC. Finally, we utilize the ground state wave functions of 2DDFG as trial states and provide a variational account of the effects of finite 2D confinement width. Our results indicate significant beyond mean-field effects. We calculate the frequency of collective monopole oscillations of the quasi-2D dipolar gas as an experimental demonstration of correlation effects.

cond-mat.quant-gas↗

arXiv2013

Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.

cond-mat.supr-con↗

arXiv2013

Theory of the random potential and conductivity at the surface of a topological insulator

We study the disorder potential induced by random Coulomb impurities at the surface of a topological insulator (TI). We use a simple model in which positive and negative impurities are distributed uniformly throughout the bulk of the TI, and we derive the magnitude of the disorder potential at the TI surface using a self-consistent theory based on the Thomas-Fermi approximation for screening by the Dirac mode. Simple formulas are presented for the mean squared potential both at the Dirac point and far from it, as well as for the characteristic size of electron/hole puddles at the Dirac point and the total concentration of electrons/holes that they contain. We also derive an expression for the autocorrelation function for the potential at the surface and show that it has an unusually slow decay, which can be used to verify the bulk origin of disorder. The implications of our model for the electron conductivity of the surface are also presented.

cond-mat.mes-hall↗

arXiv2013

Giant capacitance of a plane capacitor with a two-dimensional electron gas in a magnetic field

If a clean two-dimensional electron gas (2DEG) with small concentration $n$ comprises one (or both) electrodes of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the physical separation $d$ between electrodes. A recent paper [1] argued that when the effective Bohr radius $a_B$ of the 2DEG satisfies $a_B << d$, one can achieve $C >> C_g$ at low concentration $nd^2 << 1$. Here we show that even for devices with $a_B > d$, including graphene, for which $a_B$ is effectively infinite, one also arrives at $C >> C_g$ at low electron concentration if there is a strong perpendicular magnetic field.

cond-mat.mes-hall↗

arXiv2012

Why is the bulk resistivity of topological insulators so small?

As-grown topological insulators (TIs) are typically heavily-doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screened fluctuations in the random Coulomb potential. Using numerical simulations of a completely compensated TI, we find that the bulk resistivity has an activation energy of just 0.15 times the band gap, in good agreement with experimental data. At lower temperatures activated transport crosses over to variable range hopping with a relatively large localization length.

cond-mat.mes-hall↗

arXiv2012

Anomalously large capacitance of a plane capacitor with a two-dimensional electron gas

In electronic devices where a two-dimensional electron gas (2DEG) comprises one or both sides of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the physical separation $d$ between electrodes. This larger capacitance is known to result from the Coulomb correlations between individual electrons within the low density 2DEG, which lead to a negative thermodynamic density of states (negative compressibility). Experiments on such systems generally operate in the regime where the average spacing between electrons $n^{-1/2}$ in the 2DEG is smaller than $d$, and these experiments observe $C > C_g$ by only a few percent. A recent experiment [1], however, has observed $C$ larger than $C_g$ by almost 40% while operating in the regime $nd^2 << 1$. In this paper we argue that at $nd^2 << 1$ correlations between the electronic charge of opposite electrodes become important. We develop a theory of the capacitance for the full range of $nd^2$. We show that, in the absence of disorder, the capacitance can be $4d/a$ times larger than the geometric value, where $a << d$ is the electron Bohr radius. Our results compare favorably with the experiment of Ref. [1] without the use of adjustable parameters.

cond-mat.mes-hall↗

arXiv2012

Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains

In granular superconductors, individual grains can contain bound Cooper pairs while the system as a whole is strongly insulating. In such cases the conductivity is determined by electron hopping between localized states in individual grains. Here we examine a model of hopping conductivity in such an insulating granular superconductor, where disorder is assumed to be provided by random charges embedded in the insulating gaps between grains. We use computer simulations to calculate the single-electron and electron pair density of states at different values of the superconducting gap $Δ$, and we identify "triptych" symmetries and scaling relations between them. At a particular critical value of $Δ$, one can define an effective charge $\sqrt{2}e$ that characterizes the density of states and the hopping transport. We discuss the implications of our results for magnetoresistance and tunneling experiments.

cond-mat.dis-nn↗

arXiv2012

Theory of hopping conduction in arrays of doped semiconductor nanocrystals

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction through the array will be characterized by activated nearest-neighbor hopping or variable-range hopping (VRH). Thus far, no general theory exists to explain how these different behaviors arise at different doping levels and for different types of NCs. In this paper we examine a simple theoretical model of an array of doped semiconductor NCs that can explain the transition from activated transport to VRH. We show that in sufficiently small NCs, the fluctuations in donor number from one NC to another provide sufficient disorder to produce charging of some NCs, as electrons are driven to vacate higher shells of the quantum confinement energy spectrum. This confinement-driven charging produces a disordered Coulomb landscape throughout the array and leads to VRH at low temperature. We use a simple computer simulation to identify different regimes of conduction in the space of temperature, doping level, and NC diameter. We also discuss the implications of our results for large NCs with external impurity charges and for NCs that are gated electrochemically.

cond-mat.mes-hall↗