arXiv subjects

C. H. W. Barnes

Publications and source records attributed to C. H. W. Barnes.

At least 37 records · Page 2Linked to original sources

arXiv2010

Transparent and flexible polymerized graphite oxide thin film with frequency-dependent dielectric constant

Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowing for smaller and simpler integrated electronic devices. We discuss this polarizability in terms of space charge effects.

cond-mat.mtrl-sci↗

arXiv2008

Variation of the hopping exponent in disordered silicon MOSFETs

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.

cond-mat.str-el↗

arXiv2008

Spin polarization control through resonant states in an Fe/GaAs Schottky barrier

Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.

cond-mat.mes-hall↗

arXiv2007

Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.

cond-mat.str-el↗

arXiv2007

Energy-dependent tunnelling from few-electron dynamic quantum dots

We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.

cond-mat.mes-hall↗

arXiv2007

Geometric Suppression of Single-Particle Energy Spacings in Quantum Antidots

Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclear. We present a combination of experimental data and the results of new calculations concerning SP orbital states which show how the observed suppression of the energy spacing between states can be explained through a full consideration of the AD potential, without requiring any effects due to electron interactions such as the formation of compressible regions composed of multiple states, which may occur at higher magnetic fields. A full understanding of the regimes in which these effects occur is important for the design of devices to coherently manipulate electrons in edge states using AD resonances.

cond-mat.mes-hall↗

arXiv2007

Activation mechanisms in sodium-doped Silicon MOSFETs

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.

cond-mat.str-el↗

arXiv2007

Pulse-induced acoustoelectric vibrations in surface-gated GaAs-based quantum devices

We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nano-second electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface acoustic modes which propagate for distances greater than conventional device dimensions. We show that the pulse-induced acoustoelectric vibrations are capable of inducing significant undesired perturbations to the evolution of quantum systems.

quant-ph↗

arXiv2007

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

cond-mat.other↗

arXiv2006

A numerical investigation of a piezoelectric surface acoustic wave interaction with a one-dimensional channel

We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. We demonstrate attenuation of the SAW amplitude as a result of the presence of both mechanical and electrical gates on the surface. We show that the incorporation of a simple model for the screening by the two-dimensional electron gas (2DEG), results in a total electric potential modulation that suggests a mechanism for the capture and release of electrons by the SAW. Our simulations suggest the absence of any significant turbulence in the SAW motion which could hamper the operation of SAW based quantum devices of a more complex geometry.

cond-mat.mes-hall↗

arXiv2006

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.

cond-mat.str-el↗

arXiv2006

A finite element method for modelling electromechanical wave propagation in anisotropic piezoelectric media

We describe and evaluate a numerical solution strategy for simulating surface acoustic waves through semiconductor devices with complex geometries. This multi-physics problem is of particular relevance to the design of quantum electronic devices. The mathematical model consists of two coupled partial differential equations for the elastic wave propagation and the electric field, respectively, in anisotropic piezoelectric media. These equations are discretized by the finite element method in space and by a finite difference method in time. The latter method yields a convenient numerical decoupling of the governing equations. We describe how a computer implementation can utilize the decoupling and via object-oriented programming techniques reuse independent codes for the Poisson equation and the linear time-dependent elasticity equation. First we apply the simulator to a simplified model problem for verifying the implementation, and thereafter we show that the methodology is capable of simulating a real-world case from nanotechnology, involving surface acoustic waves in a geometrically non-trivial device made of Gallium Arsenide.

physics.comp-ph↗

arXiv2006

A finite element analysis of a silicon based double quantum dot structure

We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.

quant-ph↗

arXiv2004

Single-qubit gates and measurements in the surface acoustic wave quantum computer

In the surface acoustic wave quantum computer, the spin state of an electron trapped in a moving quantum dot comprises the physical qubit of the scheme. Via detailed analytic and numerical modeling of the qubit dynamics, we discuss the effect of excitations into higher-energy orbital states of the quantum dot that occur when the qubits pass through magnetic fields. We describe how single-qubit quantum operations, such as single-qubit rotations and single-qubit measurements, can be performed using only localized static magnetic fields. The models provide useful parameter regimes to be explored experimentally when the requirements on semiconductor gate fabrication and the nanomagnetics technology are met in the future.

cond-mat.mes-hall↗

arXiv2004

Mesoscopic one-way channels for quantum state transfer via the Quantum Hall Effect

We show that the one-way channel formalism of quantum optics has a physical realisation in electronic systems. In particular, we show that magnetic edge states form unidirectional quantum channels capable of coherently transporting electronic quantum information. Using the equivalence between one-way photonic channels and magnetic edge states, we adapt a proposal for quantum state transfer to mesoscopic systems using edge states as a quantum channel, and show that it is feasible with reasonable experimental parameters. We discuss how this protocol may be used to transfer information encoded in number, charge or spin states of quantum dots, so it may prove useful for transferring quantum information between parts of a solid-state quantum computer.

cond-mat.mes-hall↗

arXiv2002

An entangled two photon source using biexciton emission of an asymmetric quantum dot in a cavity

A semiconductor based scheme has been proposed for generating entangled photon pairs from the radiative decay of an electrically-pumped biexciton in a quantum dot. Symmetric dots produce polarisation entanglement, but experimentally-realised asymmetric dots produce photons entangled in both polarisation and frequency. In this work, we investigate the possibility of erasing the `which-path' information contained in the frequencies of the photons produced by asymmetric quantum dots to recover polarisation-entangled photons. We consider a biexciton with non-degenerate intermediate excitonic states in a leaky optical cavity with pairs of degenerate cavity modes close to the non-degenerate exciton transition frequencies. An open quantum system approach is used to compute the polarisation entanglement of the two-photon state after it escapes from the cavity, measured by the visibility of two-photon interference fringes. We explicitly relate the two-photon visibility to the degree of Bell-inequality violation, deriving a threshold at which Bell-inequality violations will be observed. Our results show that an ideal cavity will produce maximally polarisation-entangled photon pairs, and even a non-ideal cavity will produce partially entangled photon pairs capable of violating a Bell-inequality.

cond-mat↗

arXiv2002

The Effect of Stochastic Noise on Quantum State Transfer

We consider the effect of classical stochastic noise on control laser pulses used in a scheme for transferring quantum information between atoms, or quantum dots, in separate optical cavities via an optical connection between cavities. We develop a master equation for the dynamics of the system subject to stochastic errors in the laser pulses, and use this to evaluate the sensitivity of the transfer process to stochastic pulse shape errors for a number of different pulse shapes. We show that under certain conditions, the sensitivity of the transfer to the noise depends on the pulse shape, and develop a method for determining a pulse shape that is minimally sensitive to specific errors.

quant-ph↗

arXiv2000

Quantum computation using electrons trapped by surface acoustic waves

We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW) based single-electron transport devices. These devices allow single electrons to be captured from a two-dimensional electron gas in the potential minima of a SAW. We discuss how this technology can be adapted to allow the capture of electrons in pure spin states and how both single and two-qubit gates can be constructed using magnetic and non-magnetic gate technology. We give designs for readout gates to allow the spin state of the electrons to be measured and discuss how combinations of gates can be connected to make multi-qubit networks. Finally we consider decoherence and other sources of error, and how they can be minimized for our design.

cond-mat.mes-hall↗