arXiv subjects

Chao Zhao

Publications and source records attributed to Chao Zhao.

At least 19 recordsLinked to original sources

arXiv2026

LDHP: Library-Driven Hierarchical Planning for Non-prehensile Dexterous Manipulation

Non-prehensile manipulation is essential for handling thin, large, or otherwise ungraspable objects in unstructured settings. Prior planning and search-based methods often rely on ad-hoc manual designs or generate physically unrealizable motions by ignoring critical gripper properties, while training-based approaches are data-intensive and struggle to generalize to novel, out-of-distribution tasks. We propose a library-driven hierarchical planner (LDHP) that makes executability a first-class design goal: a top-tier contact-state planner proposes object-pose paths using MoveObject primitives, and a bottom-tier grasp planner synthesizes feasible grasp sequences with AdjustGrasp primitives; feasibility is certified by collision checks and quasi-static mechanics, and contact-sensitive segments are recovered via a bounded dichotomy refinement. This gripper-aware decomposition decouples object motion from grasp realizability, yields a task-agnostic pipeline that transfers across manipulation tasks and geometric variations without re-design, and exposes clean hooks for optional learned priors. Real-robot studies on zero-mobility lifting and slot insertion demonstrate consistent execution and robustness to shape and environment changes.

cs.RO↗

arXiv2026

From Sustainable Materials to User-Centered Sustainability: Material Experience in Art Healing

This study develops sustainable materials using hydrogel as the matrix and explores the transition from sustainable materials to user-centered sustainability, with a particular focus on achieving art healing through material experience. The findings reveal that "Aesthetic" property exert the greatest influence on art healing in the context of multimodal material experiences involving visual, tactile, and smell, followed by "Intrinsic" property, whereas "Physical" property have a comparatively limited effect. Furthermore, the study proposes a material experience framework that enables designers to systematically and holistically understanding material characteristics. It highlights the importance of considering users' psychological perceptions and emotional needs in the material design process.

cs.HC↗

arXiv2026

Think Deep, Not Just Long: Measuring LLM Reasoning Effort via Deep-Thinking Tokens

Large language models (LLMs) have demonstrated impressive reasoning capabilities by scaling test-time compute via long Chain-of-Thought (CoT). However, recent findings suggest that raw token counts are unreliable proxies for reasoning quality: increased generation length does not consistently correlate with accuracy and may instead signal "overthinking," leading to performance degradation. In this work, we quantify inference-time effort by identifying deep-thinking tokens -- tokens where internal predictions undergo significant revisions in deeper model layers prior to convergence. Across four challenging mathematical and scientific benchmarks (AIME 24/25, HMMT 25, and GPQA-diamond) and a diverse set of reasoning-focused models (GPT-OSS, DeepSeek-R1, and Qwen3), we show that deep-thinking ratio (the proportion of deep-thinking tokens in a generated sequence) exhibits a robust and consistently positive correlation with accuracy, substantially outperforming both length-based and confidence-based baselines. Leveraging this insight, we introduce Think@n, a test-time scaling strategy that prioritizes samples with high deep-thinking ratios. We demonstrate that Think@n matches or exceeds standard self-consistency performance while significantly reducing inference costs by enabling the early rejection of unpromising generations based on short prefixes.

cs.CL↗

arXiv2025

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide (HfO2) above the In2O3 channel significantly enhances its crystallization, leading to an average grain size of 97.2 nm in a 4.2-nm In2O3 channel. The ALD of In2O3 exhibits an epitaxy-like growth behavior, with its (222) planes aligning parallel to the (111) planes of both the top and bottom HfO2 dielectrics. As a result, bottom-gate In2O3 transistors with a high {\mu}H of 100.9 cm2/Vs and a decent subthreshold swing (SS) of 94 mV/dec are achieved by gated-Hall measurement at RT. Furthermore, the devices maintain excellent performance at low temperatures, achieving a {\mu}H of 162.2 cm2/Vs at 100 K. Our study reveals the critical role of dielectric deposition induced crystallization in enhancing carrier transport and offers a scalable pathway toward high-mobility devices.

cond-mat.mtrl-sci↗

arXiv2025

Material Experience: An Evaluation Model for Creative Materials Based on Visual-Tactile Sensory Properties

This study adopts a design-oriented approach to integrate traditional braids with commonly used matrix materials, developing creative materials with different sensory properties by altering matrix material types and braid patterns. Based on these creative materials, a quantitative and structured model is proposed to assist designers understanding the material experience process and guide material selection by analyzing the relationship between material properties and sensory perception. Specifically, participants evaluated the creative materials under visual-tactile conditions using a 7-point semantic differential (SD) scale. Correlation analysis was performed to explore the data. The main and interaction effects of matrix materials and braid patterns on impression evaluation were analyzed using two-way analysis of variance (ANOVA). A structural equation model (SEM) was constructed based on exploratory factor analysis (EFA), and path coefficients were computed to assess the relative importance of material properties in determining material attractiveness. The results show that, compared to braids, the creative materials resulted in significant changes in impression evaluation. Furthermore, the creative materials can be understood through intrinsic, aesthetic, and physical properties, with their standardized regression coefficients for material attractiveness of 0.486, 0.650, and 0.103, respectively. These properties are interrelated and under their combined influence affect the attractiveness of the material. Therefore, designers should consider utilizing these relationships to enhance sensory experience in order to achieve design objectives. Moreover, designers should also consider balancing technology and experience, using materials according to the principle of "form follows function".

cs.HC↗

arXiv2025

Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)

Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations must be able to form pristine interfaces with various materials in devices. However, previously reported large-scale hBN films with uniform thickness either are polycrystalline or are not suitable for atomically clean assembly via mechanical exfoliation, limiting their applications in device technology. Here, we report the large-scale growth of monolayer single crystalline hBN films on Ge(110) substrates by using chemical vapor deposition (CVD). Vicinal Ge(110) substrates are used for the step-directed epitaxial growth of hBN, where Ge atomic steps act as the hBN nucleation sites, guiding the uni-directional alignments of multiple hBN domains. Density functional theory (DFT) calculations reveal that the optimum hydrogen passivations on both hBN edges and Ge surfaces enable the epitaxial coupling between hBN and the Ge step edges and the single crystallinity of the final hBN films. Using epitaxially grown monolayer hBN films, we fabricate a few hBN films with controlled stacking orders and pristine interfaces through a layer-by-layer assembly process. These films function as high-quality dielectrics to enhance carrier transport in graphene and MoS 2 channels.

cond-mat.mtrl-sci↗

arXiv2025

Highly reliable, ultra-wideband, isolator-free quantum-dot mode-locked frequency combs for optical interconnects beyond 3.2Tb/s

Quantum dot mode-locked laser-based optical frequency combs are emerging as a critical solution for achieving low-cost, high-efficiency, and large-capacity optical interconnects. The practical implementation of wavelength division multiplexing interconnects necessitates a temperature-stable OFC source with a minimum 100 GHz channel spacing to enable high-bandwidth modulation while mitigating the complexity of optical filtering and detection. By leveraging the advanced co-doping technique and a colliding pulse mode-locking scheme, here, we report a compact, ultra-wideband, highly reliable, isolator-free 100 GHz-spacing InAs/GaAs QD OFC source operating up to a record temperature of 140 {\deg}C. The comb source delivers a record 3 dB optical bandwidth of 14.312 nm, containing flat-top comb lines, each supporting 128 Gb/s PAM-4 modulation, which results in a total throughput of 3.328 Tb/s with an extremely low power consumption of 0.394 pJ/bit at 25{\deg}C. Performance remains stable at 85 {\deg}C, with negligible degradation of device critical metrics. Remarkably, accelerated aging tests under harsh conditions (85 {\deg}C with 8x threshold current injection) revealed a mean time to failure of approximately 207 years. The QD OFC source demonstrated in this work, for the first time, establishes a concrete link between fundamental research on comb sources and their practical deployment in next-generation, high-density optical interconnect systems.

cond-mat.mes-hall↗

arXiv2025

Master Rules from Chaos: Learning to Reason, Plan, and Interact from Chaos for Tangram Assembly

Tangram assembly, the art of human intelligence and manipulation dexterity, is a new challenge for robotics and reveals the limitations of state-of-the-arts. Here, we describe our initial exploration and highlight key problems in reasoning, planning, and manipulation for robotic tangram assembly. We present MRChaos (Master Rules from Chaos), a robust and general solution for learning assembly policies that can generalize to novel objects. In contrast to conventional methods based on prior geometric and kinematic models, MRChaos learns to assemble randomly generated objects through self-exploration in simulation without prior experience in assembling target objects. The reward signal is obtained from the visual observation change without manually designed models or annotations. MRChaos retains its robustness in assembling various novel tangram objects that have never been encountered during training, with only silhouette prompts. We show the potential of MRChaos in wider applications such as cutlery combinations. The presented work indicates that radical generalization in robotic assembly can be achieved by learning in much simpler domains.

cs.RO↗

arXiv2025

Generative Artificial Intelligence in Robotic Manipulation: A Survey

This survey provides a comprehensive review on recent advancements of generative learning models in robotic manipulation, addressing key challenges in the field. Robotic manipulation faces critical bottlenecks, including significant challenges in insufficient data and inefficient data acquisition, long-horizon and complex task planning, and the multi-modality reasoning ability for robust policy learning performance across diverse environments. To tackle these challenges, this survey introduces several generative model paradigms, including Generative Adversarial Networks (GANs), Variational Autoencoders (VAEs), diffusion models, probabilistic flow models, and autoregressive models, highlighting their strengths and limitations. The applications of these models are categorized into three hierarchical layers: the Foundation Layer, focusing on data generation and reward generation; the Intermediate Layer, covering language, code, visual, and state generation; and the Policy Layer, emphasizing grasp generation and trajectory generation. Each layer is explored in detail, along with notable works that have advanced the state of the art. Finally, the survey outlines future research directions and challenges, emphasizing the need for improved efficiency in data utilization, better handling of long-horizon tasks, and enhanced generalization across diverse robotic scenarios. All the related resources, including research papers, open-source data, and projects, are collected for the community in https://github.com/GAI4Manipulation/AwesomeGAIManipulation

cs.RO↗

arXiv2024

Cavity-Quantum Electrodynamics with Moir\'e Flatband Photonic Crystals

Quantum emitters are a key component in photonic quantum technologies. Enhancing their single-photon emission by engineering the photonic environment using cavities can significantly improve the overall efficiency in quantum information processing. However, this enhancement is often constrained by the need for precise nanoscale control over the emitter's position within micro- or nano-cavities. Inspired by the fascinating physics of moir\'e patterns, we present an approach to strongly modify the spontaneous emission rate of a quantum emitter using a finely designed multilayer moir\'e photonic crystal with a robust isolated-flatband dispersion. Theoretical analysis reveals that, due to its nearly infinite photonic density of states, the moir\'e cavity can simultaneously achieve a high Purcell factor and exhibit large tolerance over the emitter's position. We experimentally demonstrate the coupling between this moir\'e cavity and a quantum dot through the cavity-determined polarization of the dot's emission. The radiative lifetime of the quantum dot can be tuned by a factor of 40, ranging from 42 ps to 1692 ps, which is attributed to strong Purcell enhancement and Purcell inhibition effects. Our findings pave the way for moir\'e flatband cavity-enhanced quantum light sources, quantum optical switches, and quantum nodes for quantum internet applications.

physics.optics↗

arXiv2024

Learning thin deformable object manipulation with a multi-sensory integrated soft hand

Robotic manipulation has made significant advancements, with systems demonstrating high precision and repeatability. However, this remarkable precision often fails to translate into efficient manipulation of thin deformable objects. Current robotic systems lack imprecise dexterity, the ability to perform dexterous manipulation through robust and adaptive behaviors that do not rely on precise control. This paper explores the singulation and grasping of thin, deformable objects. Here, we propose a novel solution that incorporates passive compliance, touch, and proprioception into thin, deformable object manipulation. Our system employs a soft, underactuated hand that provides passive compliance, facilitating adaptive and gentle interactions to dexterously manipulate deformable objects without requiring precise control. The tactile and force/torque sensors equipped on the hand, along with a depth camera, gather sensory data required for manipulation via the proposed slip module. The manipulation policies are learned directly from raw sensory data via model-free reinforcement learning, bypassing explicit environmental and object modeling. We implement a hierarchical double-loop learning process to enhance learning efficiency by decoupling the action space. Our method was deployed on real-world robots and trained in a self-supervised manner. The resulting policy was tested on a variety of challenging tasks that were beyond the capabilities of prior studies, ranging from displaying suit fabric like a salesperson to turning pages of sheet music for violinists.

cs.RO↗

arXiv2024

In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy

Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.

cond-mat.mes-hall↗

arXiv2024

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as the primary material platform for spin hole qubits.A low disorder material environment is essential for this process. In this work, we fabricated a Ge/SiGe heterojunction with a 60 nm buried quantum well layer on a Si substrate using reduced pressure chemical vapor deposition technology. At a temperature of 16 mK, when the carrier density is 1.87*10^11/cm2, we obtained a mobility as high as 308.64*10^4cm2/Vs. Concurrently, double quantum dot and planar germanium coupling with microwave cavities were also successfully achieved.This fully demonstrates that this structure can be used for the preparation of higher-performance hole spin qubits.

cond-mat.mes-hall↗

arXiv2024

GeSn 320 \times 256 Focal Plane Array for Silicon-Based Short-wave Infrared Imaging

Short-wave infrared (SWIR) imaging arrays have demonstrated great potential in applications spanning from military to civilian consumer electronics. However, the current focal plane arrays (FPAs), which are based on compound semiconductors, have limited applications in civilian circumstances due to elevated manufacturing costs and prolonged fabrication cycle time. To address this, a high-performance 320 $\times$ 256 focal plane array based on group-IV semiconductors has been designed and manufactured on a Si substrate using a complementary metal-oxide semiconductor (CMOS) compatible fabrication process. The optical absorption layer is composed of GeSn alloy, whose bandgap could be tailored by choosing the appropriate Sn concentration. In this work, a 10% Sn concentration was employed, yielding a response cutoff wavelength of 2308 nm for the Si-based photodetector, which was measured at 298 K. Moreover, a specific detectivity of 9.7 $\times$ 10$^{11}$ cm$\cdot$ Hz$^{1/2}$ $\cdot$ W$^{-1}$ has been achieved at 77 K, surpassing all previously reported GeSn devices, and rivals commercial extended InGaAs photodetectors. With the help of read-out circuits (ROIC), SWIR images have been successfully captured for the first time by using Si-based GeSn FPA. This work demonstrates the potential of group IV imaging arrays for various applications in the commercial SWIR imaging field.

physics.optics↗

arXiv2024

DexDiff: Towards Extrinsic Dexterity Manipulation of Ungraspable Objects in Unrestricted Environments

Grasping large and flat objects (e.g. a book or a pan) is often regarded as an ungraspable task, which poses significant challenges due to the unreachable grasping poses. Previous works leverage Extrinsic Dexterity like walls or table edges to grasp such objects. However, they are limited to task-specific policies and lack task planning to find pre-grasp conditions. This makes it difficult to adapt to various environments and extrinsic dexterity constraints. Therefore, we present DexDiff, a robust robotic manipulation method for long-horizon planning with extrinsic dexterity. Specifically, we utilize a vision-language model (VLM) to perceive the environmental state and generate high-level task plans, followed by a goal-conditioned action diffusion (GCAD) model to predict the sequence of low-level actions. This model learns the low-level policy from offline data with the cumulative reward guided by high-level planning as the goal condition, which allows for improved prediction of robot actions. Experimental results demonstrate that our method not only effectively performs ungraspable tasks but also generalizes to previously unseen objects. It outperforms baselines by a 47% higher success rate in simulation and facilitates efficient deployment and manipulation in real-world scenarios.

cs.RO↗

arXiv2024

Causal Discovery from Time-Series Data with Short-Term Invariance-Based Convolutional Neural Networks

Causal discovery from time-series data aims to capture both intra-slice (contemporaneous) and inter-slice (time-lagged) causality between variables within the temporal chain, which is crucial for various scientific disciplines. Compared to causal discovery from non-time-series data, causal discovery from time-series data necessitates more serialized samples with a larger amount of observed time steps. To address the challenges, we propose a novel gradient-based causal discovery approach STIC, which focuses on \textbf{S}hort-\textbf{T}erm \textbf{I}nvariance using \textbf{C}onvolutional neural networks to uncover the causal relationships from time-series data. Specifically, STIC leverages both the short-term time and mechanism invariance of causality within each window observation, which possesses the property of independence, to enhance sample efficiency. Furthermore, we construct two causal convolution kernels, which correspond to the short-term time and mechanism invariance respectively, to estimate the window causal graph. To demonstrate the necessity of convolutional neural networks for causal discovery from time-series data, we theoretically derive the equivalence between convolution and the underlying generative principle of time-series data under the assumption that the additive noise model is identifiable. Experimental evaluations conducted on both synthetic and FMRI benchmark datasets demonstrate that our STIC outperforms baselines significantly and achieves the state-of-the-art performance, particularly when the datasets contain a limited number of observed time steps. Code is available at \url{https://github.com/HITshenrj/STIC}.

cs.LG↗

arXiv2024

On-Demand Growth of Semiconductor Heterostructures Guided by Physics-Informed Machine Learning

Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain constrained by simulation-based design and iterative trial-and-error optimization. Here, we introduce SemiEpi, a self-driving platform designed for molecular beam epitaxy (MBE) to perform multi-step semiconductor heterostructure growth through in-situ monitoring and on-the-fly feedback control. By integrating standard MBE reactors, physics-informed machine learning (ML) models, and parameter initialization, SemiEpi identifies optimal initial conditions and proposes experiments for heterostructure growth, eliminating the need for extensive expertise in MBE processes. As a proof of concept, we demonstrate the optimization of high-density InAs quantum dot (QD) growth with a target emission wavelength of 1240 nm, showcasing the power of SemiEpi. We achieve a QD density of 5 x 10^10 cm^-2, a 1.6-fold increase in photoluminescence (PL) intensity, and a reduced full width at half maximum (FWHM) of 29.13 meV, leveraging in-situ reflective high-energy electron diffraction monitoring with feedback control for adjusting growth temperatures. Taken together, our results highlight the potential of ML-guided systems to address challenges in multi-step heterostructure growth, facilitate the development of a hardware-independent framework, and enhance process repeatability and stability, even without exhaustive knowledge of growth parameters.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical.

physics.app-ph↗