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Daniel C. Ralph

Publications and source records attributed to Daniel C. Ralph.

At least 55 records · Page 3Linked to original sources
arXiv2020

Observation of strong bulk damping-like spin-orbit torque in chemically disordered ferromagnetic single layers

Strong damping-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected τDL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel τDL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for developing single-layer-based spin-torque memory, oscillator, and logic technologies.

cond-mat.mtrl-sci↗
arXiv2020

Transverse and Longitudinal Spin-Torque Ferromagnetic Resonance for Improved Measurements of Spin-Orbit Torques

Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pumping (SP) and heating can cause spin current or heat flows between the layers, inducing additional resonant voltage signals via the inverse spin Hall effect (ISHE) and Nernst effects (NE). In the standard ST-FMR geometry, these extra artifacts exhibit a dependence on the angle of an in-plane magnetic field that is identical to the rectification signal from the SOTs. We show experimentally that the rectification and artifact voltages can be quantified separately by measuring the ST-FMR signal transverse to the applied current (i.e., in a Hall geometry) in addition to the usual longitudinal geometry. We find that in Pt (6 nm)/CoFeB samples the contribution from the artifacts is small compared to the SOT rectification signal for CoFeB layers thinner than 6 nm, but can be significant for thicker magnetic layers. We observe a sign change in the artifact voltage as a function of CoFeB thickness that we suggest may be due to a competition between a resonant heating effect and the SP/ISHE contribution.

cond-mat.mes-hall↗
arXiv2020

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.

physics.app-ph↗
arXiv2019

Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure.

cond-mat.mtrl-sci↗
arXiv2019

Effective spin-mixing conductance of heavy-metal-ferromagnet interfaces

The effective spin-mixing conductance (G_eff) of a heavy metal/ferromagnet (HM/FM) interface characterizes the efficiency of the interfacial spin transport.Accurately determining G_eff is critical to the quantitative understanding of measurements of direct and inverse spin Hall effects. G_eff is typically ascertained from the inverse dependence of magnetic damping on the FM thickness under the assumption that spin pumping is the dominant mechanism affecting this dependence.Here we report that, this assumption fails badly in many in-plane magnetized prototypical HM/FM systems in the nm-scale thickness regime. Instead, the majority of the damping is from two-magnon scattering at the FM interface, while spin-memory-loss scattering at the interface can also be significant.If these two effects are neglected, the results will be an unphysical "giant" apparent G_eff and hence considerable underestimation of both the spin Hall ratio and the spin Hall conductivity in inverse/direct spin Hall experiments.

cond-mat.mtrl-sci↗
arXiv2019

Local Photothermal Control of Phase Transitions for On-demand Room-temperature Rewritable Magnetic Patterning

The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin-ice lattices and enable the study of magnon propagation. Here, we report a novel approach for magnetic patterning that allows repeated creation and erasure of arbitrary shapes of thin-film ferromagnetic structures. This strategy is enabled by epitaxial Fe$_{0.52}$Rh$_{0.48}$ thin films designed so that both ferromagnetic and antiferromagnetic phases are bistable at room temperature. Starting with the film in a uniform antiferromagnetic state, we demonstrate the ability to write arbitrary patterns of the ferromagnetic phase by local heating with a focused laser. If desired, the results can then be erased by cooling with a thermoelectric cooler and the material repeatedly re-patterned.

cond-mat.mtrl-sci↗
arXiv2019

Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films

Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1st-order phase transition to a ferromagnetic state near 100~$^\circ$C. FeRh provides the unique opportunity to study both uncompensated moments in the antiferromagnetic phase and the interaction of uncompensated moments with emergent ferromagnetism within a relatively broad (10-15~$^\circ$C) temperature range near $T_C$. In the AF phase below $T_C$, we image both pinned UMs, which cause local vertical exchange bias, and unpinned UMs, which exhibit an enhanced coercive field that reflects exchange-coupling to the AF bulk. Near $T_C$, where AF and FM order coexist, we find that the emergent FM order is exchange-coupled to the bulk Néel order. This exchange coupling leads to the nucleation of unusual configurations in which different FM domains are pinned parallel, antiparallel, and perpendicular to the applied magnetic field before suddenly collapsing into a state uniformly parallel to the field.

cond-mat.mtrl-sci↗
arXiv2019

Intrinsic nature of the giant spin Hall conductivity of Pt

More than a decade after the first theoretical and experimental studies of the spin Hall conductivity (SHC) of Pt, both its dominant origin and amplitude remain in dispute. Resolving these questions is of fundamental importance for advancing understanding of very strong spin-orbit effects in conducting systems and for maximizing the spin Hall effect for energy-efficient spintronics applications. Here, we report the experimental determination of the rapid variation of the intrinsic SHC of Pt with the carrier lifetime (τ) in the dirty-metal regime by incorporating finely dispersed MgO inter-site impurities into the Pt while maintaining the essential elements of its band structure (face-centered-cubic order). This findings conclusively validate the theoretical prediction that the SHC in Pt in the dirty-metal regime should be dominated by the intrinsic Berry curvature contribution and should decrease rapidly with shortening τ. This also establishes the limit to which the spin Hall ratio θSH of pure Pt can be increased by shortening τ. When the spin backflow at the Pt/ferromagnet interface due to the finite interfacial spin-mixing conductance is taken into account, the amplitude of the intrinsic SHC of Pt in the clean limit is found to be at least 1.6x10^6 (h_bar/2e) Ω-1 m-1, more than 3.5 times greater than the available theoretical predictions. Our work also establishes a compelling spin Hall metal Pt0.6(MgO)0.4 that combines a giant θSH (0.73) with a moderate resistivity (74 μΩ cm), a strong Dzyaloshinskii-Moriya interaction, easy growth, and good integration compatibility for spintronics technology.

cond-mat.mtrl-sci↗
arXiv2019

Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide $β$-MoTe$_2$

Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $β$-MoTe$_2$, which unlike WTe$_2$ retains bulk inversion symmetry. We measure spin-orbit torques on $β$-MoTe$_2$/Permalloy heterostructures using spin-torque ferromagnetic resonance as a function of crystallographic alignment and MoTe$_2$ thickness down to the monolayer limit. We observe an out-of-plane antidamping torque with a spin torque conductivity as strong as 1/3 of that of WTe$_2$, demonstrating that the breaking of bulk inversion symmetry in the spin-generation material is not a necessary requirement for producing an out-of-plane antidamping torque. We also measure an unexpected dependence on the thickness of the $β$-MoTe$_2$ -- the out-of-plane antidamping torque is present in MoTe$_2$/Permalloy heterostructures when the $β$-MoTe$_2$ is a monolayer or trilayer thick, but goes to zero for devices with bilayer $β$-MoTe$_2$.

cond-mat.mes-hall↗
arXiv2019

Enhancement of spin transparency by interfacial alloying

We report that atomic-layer alloying (intermixing) at a Pt/Co interface can increase, by approximately 30%, rather than degrade the interfacial spin transparency, and thereby strengthen the efficiency of the dampinglike spin-orbit torque arising from the spin Hall effect in the Pt. At the same time, this interfacial alloying substantially reduces fieldlike spin-orbit torque. Insertion of an ultrathin magnetic alloy layer at heavy-metal/ferromagnet interfaces represents an effective approach for improving interfacial spin transparency that may enhance not only spin-orbit torques but also the spin detection efficiency in inverse spin Hall experiments.

cond-mat.mtrl-sci↗
arXiv2019

Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures

As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface Néel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average Néel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order.

cond-mat.mtrl-sci↗
arXiv2019

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials

We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe$_2$. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy, but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially non-uniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries.

cond-mat.mes-hall↗
arXiv2018

Spin-orbit torques in NbSe$_2$/Permalloy bilayers

We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe$_{2}$ layer, we also observe an in-plane antidamping torque with torque conductivity $σ_{S} \approx 10^{3} (\hbar / 2e)$($Ω$m)$^{-1}$ and indications of a weak field-like contribution to the out-of-plane torque oriented opposite to the Oersted torque. Furthermore, in some samples we also measure an in-plane field-like torque with the form $\hat{m} \times \hat{z}$, where $\hat{m}$ is the Permalloy magnetization direction and $\hat{z}$ is perpendicular to the sample plane. The size of this component varies strongly between samples and is not correlated with the NbSe$_{2}$ thickness. A torque of this form is not allowed by the bulk symmetries of NbSe$_{2}$, but is consistent with symmetry breaking by a uniaxial strain that might result during device fabrication.

cond-mat.mes-hall↗
arXiv2017

Creation of Localized Skyrmion Bubbles in Co/Pt Bilayers using a Spin Valve Nanopillar

We fabricate devices in which a magnetic nanopillar spin valve makes contact to a Co/Pt bilayer thin film with perpendicular magnetic anisotropy, in order to achieve local control of domains in the Co/Pt bilayer underneath the nanopillar. The goal is to develop the ability to nucleate, detect, and annihilate magnetic skyrmions in the Co/Pt using spin-polarized currents from the nanopillar. We demonstrate the ability to distinguish the local behavior of the Co/Pt film beneath the nanopillar from the extended film and show that the two can switch independently of each other. This allows us to isolate a localized domain under the pillar that can be controlled separately from the rest of the Co/Pt film using applied currents and magnetic fields. Micromagnetic simulations indicate that this localized domain has skyrmion symmetry. Our results represent a first step toward controlling room-temperature skyrmions using localized spin-transfer torque.

cond-mat.mes-hall↗
arXiv2017

Reorientable Spin Direction for Spin Current Produced by the Anomalous Hall Effect

We show experimentally that the spin direction of the spin current generated by spin-orbit interactions within a ferromagnetic layer can be reoriented by turning the magnetization direction of this layer. We do this by measuring the field-like component of spin-orbit torque generated by an exchange-biased FeGd thin film and acting on a nearby CoFeB layer. The relative angle of the CoFeB and FeGd magnetic moments is varied by applying an external magnetic field. We find that the resulting torque is in good agreement with predictions that the spin current generated by the anomalous Hall effect from the FeGd layer depends on the FeGd magnetization direction $\hat{m}_{FeGd}$ according to $\vecσ\propto\left ( \hat{y}\cdot \hat{m}_{FeGd} \right )\hat{m}_{FeGd}$, where $\hat{y}$ is the in-plane direction perpendicular to the applied charge current. Because of this angular dependence, the spin-orbit torque arising from the anomalous Hall effect can be non-zero in a sample geometry for which the spin Hall torque generated by non-magnetic materials is identically zero.

cond-mat.mtrl-sci↗
arXiv2017

3D MOKE spin-orbit torque magnetometer

We demonstrate simultaneous detection of current driven antidamping-like and field-like spin-orbit torques in heavy metal/ferromagnetic metal bilayers by measuring all three magnetization components m_(x,) m_y, and m_z using the vector magneto-optic Kerr effect. We have also implemented a self-calibration method to accurately determine the effective fields of spin-orbit torques. With this technique, we investigate the magnitude and direction of spin-orbit torques in a series of platinum/permalloy samples. The values found are in excellent agreement with results obtained via quadratic magneto-optic Kerr effect, planar Hall effect, and spin transfer ferromagnetic resonance measurements.

physics.ins-det↗
arXiv2017

Thickness dependence of spin-orbit torques generated by WTe2

We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidamping torque, and show directly that the sign of this torque component is reversed across a monolayer step in the WTe2. The magnitude of the out-of-plane antidamping torque depends only weakly on WTe2 thickness, such that even a single-monolayer WTe2 device provides a strong torque that is comparable to much thicker samples. In contrast, the out-of-plane field-like torque has a significant dependence on the WTe2 thickness. We demonstrate that this field-like component originates predominantly from the Oersted field, thereby correcting a previous inference drawn by our group based on a more limited set of samples.

cond-mat.mes-hall↗