arXiv subjects

Deepti Jain

Publications and source records attributed to Deepti Jain.

22 records · Page 2Linked to original sources

arXiv2019

Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems.

cond-mat.mtrl-sci↗

arXiv2019

Record-High Proximity-Induced Anomalous Hall Effect in (Bi$_x$Sb$_{1-x}$)2Te$_3$ Thin Film Grown on CrGeTe$_3$ Substrate

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature of QAHE, magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several Ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3(BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CeGeTe3(CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical match for magnetic insulator/TI proximity systems.

cond-mat.mes-hall↗

arXiv2018

Electric field modulated topological magnetoelectric effect in Bi$_2$Se$_3$

Topological insulators have been predicted to exhibit a variety of interesting phenomena including a quantized magnetoelectric response and novel spintronics effects due to spin textures on their surfaces. However, experimental observation of these phenomena has proved difficult due to the finite bulk carrier density which may overwhelm the intrinsic topological responses that are expressed at the surface. Here, we demonstrate a novel ionic gel gating technique to tune the chemical potential of Bi$_{2}$Se$_{3}$ thin films while simultaneously performing THz spectroscopy. We can tune the carrier concentration by an order of magnitude and shift the Fermi energy, E$_{F} $ to as low as $\simeq$ 10 meV above the Dirac point. At high bias voltage and magnetic field, we observe a quantized Faraday angle consistent with the topological magnetoelectric effect that can be tuned by ionic gel gating through a number of plateau states

cond-mat.mes-hall↗

arXiv2011

Investigation of weak itinerant ferromagnetism and critical behavior of Y$_2$Ni$_7$

The weak itinerant ferromagnetic behavior of Y$_2$Ni$_7$ is investigated through magnetic, transport and calorimetric measurements. The low value of saturation moment, large Rhodes-Wohlfarth ratio, large value of the linear term in heat capacity and Fermi liquid like resistivity behavior with enhanced electron-electron scattering contribution establish firmly the weak itinerant ferromagetic nature of the sample. The critical exponents associated with the paramagnetic to ferromagnetic transition are also investigated from magnetization isotherms using modified Arrott plot, Kouvel-Fisher plot and critical isotherm technique. The more accurate Kouvel-Fisher plot provides the critical exponents to be $β$ = 0.306, $γ$ = 1.401 and $δ$ = 5.578. These values are markedly different from the mean field values and correspond closely to the two dimensional Ising spin system with long range spin spin interaction.

cond-mat.str-el↗