arXiv subjects

Dmitri E. Nikonov

Publications and source records attributed to Dmitri E. Nikonov.

59 records · Page 4Linked to original sources

arXiv2006

Power dissipation in spintronic devices out of thermodynamic equilibrium

Quantum limits of power dissipation in spintronic computing are estimated. A computing element composed of a single electron in a quantum dot is considered. Dynamics of its spin due to external magnetic field and interaction with adjacent dots is described via the Bloch equations. Spin relaxation due to magnetic noise from various sources is described as coupling to a reservoir. Resulting dissipation of energy is calculated and is shown to be much less than the thermal limit, ~kT per bit, if the rate of spin relaxation is much slower than the switching rate. Clues on how to engineer an energy efficient spintronic device are provided.

cond-mat.mes-hall↗

arXiv2005

Ballisticity of nanotube FETs: Role of phonon energy and gate bias

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.

cond-mat.mes-hall↗

arXiv2005

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.

cond-mat.mes-hall↗

arXiv2003

Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.

cond-mat.mes-hall↗

arXiv1998

Bose condensation in two dimensions with disorder: Gross-Pitaevskii approach

Bose condensation of interacting bosons in a two-dimensional random potential is studied. The Gross-Pitaevskii equation is solved to determine the spatially-varying order parameter and the localization length as a function of the disorder, the interaction strength, and the condensate density. A finite temperature of condensation is obtained thereby. The results are applied to determination of the superradiant decay of excitons in a GaAs quantum well.

quant-ph↗