arXiv subjects
Publications and source records attributed to Dohun Kim.
We use an infinite $k$-ary tree with a self-loop at the root as our underlying graph. We consider a chip-firing process starting with $N$ chips at the root. We describe the stable configurations. We calculate the number of fires for each vertex and the total number of fires. We study a sequence of the number of root fires for a given $k$ as a function of $N$ and study its properties. We do the same for the total number of fires.
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, we also demonstrate multi-level states, switched by electrical current, which can dramatically enhance the information capacity density and reduce computing costs. Thus, our observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of van-der-Waals magnets in the field of spin memory and spintronics.
Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase transition temperature. We report that surprisingly an in-plane current can tune the magnetic state of nm-thin van der Waals ferromagnet Fe3GeTe2 from a hard magnetic state to a soft magnetic state. It is the direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe3GeTe2. And we further demonstrate a working model of a new nonvolatile magnetic memory based on the principle of our discovery in Fe3GeTe2, controlled by a tiny current. Our findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impacts on the future development of spintronic and magnetic memory.
Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic superfluid. Large angle twisted bilayer graphene offers unprecedented strong interlayer Coulomb interaction, since both layer thickness and layer spacing are of atomic scale and a barrier is no more needed as the twist induced momentum mismatch suppresses tunneling. The extra valley degree of freedom also adds richness. Here we report the observation of fractional quantum Hall physics at 1/3 total filling for balanced layer population in this system. Monte Carlo simulations support that the ground state is also an excitonic superfluid but the excitons are composed of fractional rather than elementary charges. The observed phase transitions with an applied displacement field at this and other fractional fillings are also addressed with simulations. They reveal ground states with different topology and symmetry properties.
We report energy selective tunneling readout-based Hamiltonian parameter estimation of a two-electron spin qubit in a GaAs quantum dot array. Optimization of readout fidelity enables a single-shot measurement time of 16 on average, with adaptive initialization and efficient qubit frequency estimation based on real-time Bayesian inference. For qubit operation in a frequency heralded mode, we observe a 40-fold increase in coherence time without resorting to dynamic nuclear polarization. We also demonstrate active frequency feedback with quantum oscillation visibility, single-shot measurement fidelity, and state initialization fidelity up to 97.7%, 99%, and over 99.7%, respectively. By pushing the sensitivity of the energy selective tunneling-based spin to charge conversion to the limit, the technique is useful for advanced quantum control protocols such as error mitigation schemes, where fast qubit parameter calibration with a large signal-to-noise ratio is crucial.
As quantum computing advances towards practical applications, reducing errors remains a crucial frontier for developing near-term devices. Errors in the quantum gates and quantum state readout could result in noisy circuits, which would prevent the acquisition of the exact expectation values of the observables. Although ultimate robustness to errors is known to be achievable by quantum error correction-based fault-tolerant quantum computing, its successful implementation demands large-scale quantum processors with low average error rates that are not yet widely available. In contrast, quantum error mitigation (QEM) offers more immediate and practical techniques, which do not require extensive resources and can be readily applied to existing quantum devices to improve the accuracy of the expectation values. Here, we report the implementation of a zero-noise extrapolation-based error mitigation technique on a silicon spin qubit platform. This technique has recently been successfully demonstrated for other platforms such as superconducting qubits, trapped-ion qubits, and photonic processors. We first explore three methods for amplifying noise on a silicon spin qubit: global folding, local folding, and pulse stretching, using a standard randomized benchmarking protocol. We then apply global folding-based zero-noise extrapolation to the state tomography and achieve a state fidelity of 99.96% (98.52%), compared to the unmitigated fidelity of 75.82% (82.16%) for different preparation states. The results show that the zero-noise extrapolation technique is a versatile approach that is generally adaptable to quantum computing platforms with different noise characteristics through appropriate noise amplification methods.
Spins in solid systems can inherently serve as qubits for quantum simulation or quantum information processing. Spin qubits are usually prone to environmental magnetic field fluctuations; however, a spin qubit encoded in a decoherence-free-subspace (DFS) can be protected from certain degrees of environmental noise depending on the specific structure of the DFS. Here, we derive the "true" DFS from an antiferromagnetic Heisenberg spin-1/2 trimer, which protects the qubit states against both short- and long-wavelength magnetic field fluctuations. We define the spin trimer with three electrons confined in a gate-defined GaAs double quantum dot (DQD) where we exploit Wigner-molecularization in one of the quantum dots. We first utilize the trimer for dynamic nuclear polarization (DNP), which generates a sizable magnetic field difference, $ΔB_\mathrm{z}$, within the DQD. We show that large $ΔB_\mathrm{z}$ significantly alters the eigenspectrum of the trimer and results in the "true" DFS in the DQD. Real-time Bayesian estimation of the DFS energy gap explicitly demonstrates protection of the DFS against short-wavelength magnetic field fluctuations in addition to long-wavelength ones. Our findings pave the way toward compact DFS structures for exchange-coupled quantum dot spin chains, the internal structure of which can be coherently controlled completely decoupled from environmental magnetic fields.
Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface.
We introduce an improved CNOT synthesis algorithm that considers nearest-neighbour interactions and CNOT gate error rates in noisy intermediate-scale quantum (NISQ) hardware. Compared to IBM's Qiskit compiler, it improves the fidelity of a synthesized CNOT circuit by about 2 times on average (up to 9 times). It lowers the synthesized CNOT count by a factor of 13 on average (up to a factor of 162). Our contribution is twofold. First, we define a $\textsf{Cost}$ function by approximating the average gate fidelity $F_{avg}$. According to the simulation results, $\textsf{Cost}$ fits the error probability of a noisy CNOT circuit, $\textsf{Prob} = 1 - F_{avg}$, much tighter than the commonly used cost functions. On IBM's fake Nairobi backend, it matches $\textsf{Prob}$ to within $10^{-3}$. On other backends, it fits $\textsf{Prob}$ to within $10^{-1}$. $\textsf{Cost}$ accurately quantifies the dynamic error characteristics and shows remarkable scalability. Second, we propose a noise-aware CNOT routing algorithm, NAPermRowCol, by adapting the leading Steiner-tree-based connectivity-aware CNOT synthesis algorithms. A weighted edge is used to encode a CNOT gate error rate and $\textsf{Cost}$-instructed heuristics are applied to each reduction step. NAPermRowCol does not use ancillary qubits and is not restricted to certain initial qubit maps. Compared with algorithms that are noise-agnostic, it improves the fidelity of a synthesized CNOT circuit across varied NISQ hardware. Depending on the benchmark circuit and the IBM backend selected, it lowers the synthesized CNOT count up to $56.95\%$ compared to ROWCOL and up to $21.62\%$ compared to PermRowCol. It reduces the synthesis $\textsf{Cost}$ up to $25.71\%$ compared to ROWCOL and up to $9.12\%$ compared to PermRowCol. Our method can be extended to route a more general quantum circuit, giving a powerful new tool for compiling on NISQ devices.
Language processing is at the heart of current developments in artificial intelligence, and quantum computers are becoming available at the same time. This has led to great interest in quantum natural language processing, and several early proposals and experiments. This paper surveys the state of this area, showing how NLP-related techniques have been used in quantum language processing. We examine the art of word embeddings and sequential models, proposing some avenues for future investigation and discussing the tradeoffs present in these directions. We also highlight some recent methods to compute attention in transformer models, and perform grammatical parsing. We also introduce a new quantum design for the basic task of text encoding (representing a string of characters in memory), which has not been addressed in detail before. Quantum theory has contributed toward quantifying uncertainty and explaining "What is intelligence?" In this context, we argue that "hallucinations" in modern artificial intelligence systems are a misunderstanding of the way facts are conceptualized: language can express many plausible hypotheses, of which only a few become actual.
Hexagonal boron nitride (h-BN) is a key ingredient for various two-dimensional (2D) van der Waals heterostructure devices, but the exact role of h-BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear. Here, we report that h-BN encapsulation greatly removes the defect-related gap states by stabilizing the chemisorbed oxygen molecules onto the defects of monolayer WS2 crystals. Electron energy loss spectroscopy (EELS) combined with theoretical analysis clearly confirms that the oxygen molecules are chemisorbed onto the defects of WS2 crystals and are fixated by h-BN encapsulation, with excluding a possibility of oxygen molecules trapped in bubbles or wrinkles formed at the interface between WS2 and h-BN. Optical spectroscopic studies show that h-BN encapsulation prevents the desorption of oxygen molecules over various excitation and ambient conditions, resulting in a greatly lowered and stabilized free electron density in monolayer WS2 crystals. This suppresses the exciton annihilation processes by two orders of magnitude compared to that of bare WS2. Furthermore, the valley polarization becomes robust against the various excitation and ambient conditions in the h-BN encapsulated WS2 crystals.
We present a novel flipping transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film and control its stickiness through oxygen plasma and UV-Ozone treatment, also effectively removing residues from the gel film surface. The cleanliness of the surface is verified through atomic force microscopy. We investigate the quality of our fabricated devices using magnetotransport measurements on graphene/hBN and graphene/α-RuCl3 heterostructures. Remarkably,graphene/hBN devices produced with the flipping method display quality similar to that of fully encapsulated devices. This is evidenced by the presence of a symmetry-broken state at 1 T. Additionally, features of the Hofstadter butterfly were also observed in the second devices. In the case of graphene/α-RuCl3, we observe quantum oscillations with a beating mode and two-channel conduction, consistent with fully encapsulated devices.
Advancements in the implementation of quantum hardware have enabled the acquisition of data that are intractable for emulation with classical computers. The integration of classical machine learning (ML) algorithms with these data holds potential for unveiling obscure patterns. Although this hybrid approach extends the class of efficiently solvable problems compared to using only classical computers, this approach has been realized for solving restricted problems because of the prevalence of noise in current quantum computers. Here, we extend the applicability of the hybrid approach to problems of interest in many-body physics, such as predicting the properties of the ground state of a given Hamiltonian and classifying quantum phases. By performing experiments with various error-reducing procedures on superconducting quantum hardware with 127 qubits, we managed to acquire refined data from the quantum computer. This enabled us to demonstrate the successful implementation of classical ML algorithms for systems with up to 44 qubits. Our results verify the scalability and effectiveness of the classical ML algorithms for processing quantum experimental data.
Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet qubit oscillation (~100 MHz) in a gate-defined double quantum dot in $^{28}$Si/SiGe with an on-chip micromagnet with which we show the oscillation quality factor of an encoded spin qubit exceeding 580. The coherence time $\textit{T}_{2}$* is analyzed as a function of potential detuning and an external magnetic field. In weak magnetic fields, the coherence is limited by fast noise compared to the data acquisition time, which limits $\textit{T}_{2}$* < 1 $μ$s in the ergodic limit. We present evidence of sizable and coherent coupling of the qubit with the spin states of a nearby quantum dot, demonstrating that appropriate spin-electric coupling may enable a charge-based two-qubit gate in a (1,1) charge configuration.
We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching $\sim 10^5\mathrm{\ T^{-1}A^{-1}}$. Furthermore, the $\mathrm{CrPS_4/NbSe_2/CrPS_4}$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to $40\%$. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{\ mT}$) by exploiting the magnetic proximity effect.
We report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, we suppress single particle tunneling between both bilayers. Since the bilayers are spatially separated by only 0.34 nm, the stack benefits from strong interlayer Coulomb interactions. These interactions can cause the formation of a Bose-Einstein condensate. Indeed, such a condensate is observed for half filling in each bilayer sheet. However, only when the partially filled levels have orbital index 1. It is absent for partially filled levels with orbital index 0. This discrepancy is tentatively attributed to the role of skyrmion/anti-skyrmion pair excitations and the dependence of the energy of these excitations on the orbital index. The application of asymmetric top and bottom gate voltages enables to influence the orbital nature of the electronic states of the graphene bilayers at the chemical potential and to navigate in an orbital mixed space. The latter hosts an even denominator fractional quantum Hall state at total filling -3/2. Our observations suggest a unique edge reconstruction involving both electrons and chiral p-wave composite fermions.
We report the simultaneous operation and two-qubit coupling measurement of a pair of two-electron spin qubits that are actively decoupled from quasistatic nuclear noise in a GaAs quadruple quantum dot array. Coherent Rabi oscillations of both qubits (decay time $\approx$2 μs; frequency few MHz) are achieved by continuously tuning the drive frequency using rapidly converging real-time Hamiltonian estimators. By state conditional exchange oscillation measurements, we also observe strong two-qubit capacitive interaction (> 190 MHz). We show that the scaling of the capacitive interaction with respect to intra-qubit exchange energies is stronger than the bilinear form, consistent with recent theoretical predictions. We observe a high ratio (>16) between coherence and conditional phase-flip time, which supports the possibility of generating high-fidelity and fast quantum entanglement between encoded spin qubits using a simple capacitive interaction.
Quantum defects in diamonds have been studied as a promising resource for quantum science. The subtractive fabrication process for improving photon collection efficiency often require excessive milling time that can adversely affect the fabrication accuracy. We designed and fabricated a Fresnel-type solid immersion lens using the focused ion beam. For a 5.8 um-deep Nitrogen-vacancy (NV-) center, the milling time was highly reduced (1/3 compared to a hemispherical structure), while retaining high photon collection efficiency (> 2.24 compared to a flat surface). In numerical simulation, this benefit of the proposed structure is expected for a wide range of milling depths.