arXiv subjects

Dohun Kim

Publications and source records attributed to Dohun Kim.

At least 73 records · Page 4Linked to original sources

arXiv2018

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits.

cond-mat.mes-hall↗

arXiv2018

An efficient fluorescent single-particle position tracking system for long-term pulsed measurements of nitrogen-vacancy centers in diamond

A simple and convenient design enables real-time three-dimensional position tracking of nitrogen-vacancy (NV) centers in diamond. The system consists entirely of commercially available components (a single photon counter, a high-speed digital-to-analog converter, a phase-sensitive detector-based feedback device, and a piezo stage), eliminating the need for custom programming or rigorous optimization processes. With a large input range of counters and trackers combined with the high sensitivity of single-photon counting, high-speed position tracking (upper bound recovery time of 0.9 s upon 250 nm of step-like positional shift) not only of bright ensembles but also of low-photon-collection-efficiency single to few NV centers is possible. The tracking requires position modulation of only 10 nm, which allows simultaneous position tracking and pulsed measurements in the long term. Therefore, this tracking system enables measuring a single spin magnetic resonance and Rabi oscillations at a very high resolution even without photon collection optimization. The system is widely applicable to various fields related to NV centers quantum manipulation research such as NV optical trapping, NV tracking in fluid dynamics, and biological sensing using NV centers inside a biological cell.

physics.ins-det↗

arXiv2017

Markov chain Hebbian learning algorithm with ternary synaptic units

In spite of remarkable progress in machine learning techniques, the state-of-the-art machine learning algorithms often keep machines from real-time learning (online learning) due in part to computational complexity in parameter optimization. As an alternative, a learning algorithm to train a memory in real time is proposed, which is named as the Markov chain Hebbian learning algorithm. The algorithm pursues efficient memory use during training in that (i) the weight matrix has ternary elements (-1, 0, 1) and (ii) each update follows a Markov chain--the upcoming update does not need past weight memory. The algorithm was verified by two proof-of-concept tasks (handwritten digit recognition and multiplication table memorization) in which numbers were taken as symbols. Particularly, the latter bases multiplication arithmetic on memory, which may be analogous to humans' mental arithmetic. The memory-based multiplication arithmetic feasibly offers the basis of factorization, supporting novel insight into the arithmetic.

cs.NE↗

arXiv2017

Extending the coherence of a quantum dot hybrid qubit

Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.

cond-mat.mes-hall↗

arXiv2017

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.

cond-mat.mes-hall↗

arXiv2016

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv2015

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

Since the discovery of n-type copper oxide superconductors, the evolution of electron- and hole-bands and its relation to the superconductivity have been seen as a key factor in unveiling the mechanism of high-Tc superconductors. So far, the occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to +2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation between electrons and holes is commonly expected. Our findings paint the picture where Coulomb repulsion plays an important role in the evolution of the electronic states in n-type cuprate superconductors.

cond-mat.supr-con↗

arXiv2015

Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near charge neutrality point and at low temperatures, the gate dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states, but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ~ 0.5 x 1012 cm-2 per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

cond-mat.mes-hall↗

arXiv2015

High fidelity resonant gating of a silicon based quantum dot hybrid qubit

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction.

cond-mat.mes-hall↗

arXiv2014

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $ΔB$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins.

cond-mat.mes-hall↗

arXiv2014

Tuning bulk and surface conduction in topological Kondo insulator SmB6

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.

cond-mat.str-el↗

arXiv2014

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

cond-mat.mes-hall↗

arXiv2014

Approaching the Limits of Transparency and Conductivity in Graphitic Materials through Lithium Intercalation

Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical transmittance spectra and electrical transport properties of ultrathin-graphite (3-60 graphene layers) simultaneously via electrochemical lithiation/delithiation. Upon intercalation we observe an increase of both optical transmittance (up to twofold) and electrical conductivity (up to two orders of magnitude), strikingly different from other materials. Transmission as high as 91.7% with a sheet resistance of 3.0 Ω per square is achieved for 19-layer LiC6, which corresponds to a figure of merit σ_dc/σ_opt = 1400, significantly higher than any other continuous transparent electrodes. The unconventional modification of ultrathin-graphite optoelectronic properties is explained by the suppression of interband optical transitions and a small intraband Drude conductivity near the interband edge. Our techniques enable the investigation of other aspects of intercalation in nanostructures.

cond-mat.mtrl-sci↗

arXiv2014

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.

cond-mat.mes-hall↗

arXiv2012

High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ~50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.

cond-mat.mes-hall↗

arXiv2012

Coherent Topological Transport on the Surface of Bi2Se3

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.

cond-mat.mes-hall↗

arXiv2012

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

cond-mat.mtrl-sci↗

arXiv2012

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.

cond-mat.mes-hall↗