arXiv subjects
Publications and source records attributed to E. L. Ivchenko.
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
The mechanisms for generation of long-lived spin coherence in a two-dimensional electron gas (2DEG) have been studied experimentally by means of a picosecond pump-probe Kerr rotation technique. CdTe/(Cd,Mg)Te quantum wells with a diluted 2DEG were investigated. The strong Coulomb interaction between electrons and holes, which results in large binding energies of neutral excitons and negatively charged excitons (trions), allows one to address selectively the exciton or trion states by resonant optical excitation. Different scenarios of spin coherence generation were analyzed theoretically, among them the direct trion photocreation, the formation of trions from photogenerated excitons and the electron-exciton exchange scattering. Good agreement between experiment and theory is found.
A phenomenological theory of luminescence properties of one-dimensional resonant photonic crystals is developed within the framework of classical Maxwell equations with fluctuating polarization terms representing non-coherent sources of emission. The theory is based on an effective general approach to determining linear response of these structures and takes into account formation of polariton modes due to coherent radiative coupling between their constituting elements. The general results are applied to Bragg multiple-quantum-well structures, and theoretical luminescence spectra of these systems are compared with experimental results. It is shown that the emission of such systems can be significantly influenced by deliberately introducing defect elements in the structure. The relation between absorption and luminescence spectra is also discussed.
In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our original result [Ivchenko and Kiselev, Sov. Phys. Semicond. 26, 827 (1992)] and readily conclude that ``the previous theory of the g factor in heterostructures is inadequate''. We show here that the entire discrepancy can be tracked down to an additional contribution missing in the incomplete elimination procedure of Pfeffer and Zawadzki. This mistake equally affects their ``exact'' and approximate results. When the overlooked terms stemming from the nondiagonal Zeeman interaction between light hole and spin-orbit-split valence states are taken into account in the effective electron dispersion, the results of the both approaches applied to the three-level kp model become identical.
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.
The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the anisotropic long-range electron-hole exchange interaction in the zero-dimensional exciton, and the exchange interaction of the electron and the hole with the $d$-electrons of a Mn ion inserted inside the dot. Depending on the relation between the quantum dot anisotropy and the exciton-Mn coupling the photoluminescence excitation spectrum has a qualitatively different behavior. It provides a deep insight into the spin structure of the excited excitonic states.
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
To date, optical orientation of free-carrier spins and spin currents have been achieved by circularly polarized light, while the linearly polarized light has been used for optical alignment of electron momenta. Here we show that, in low-dimensional structures, absorption of the linearly polarized light also leads to the spin polarization and spin photocurrent, and, thus, the electron and hole spins can be manipulated by light of zero helicity. The microscopic description of the both effects is developed for interband optical transitions in undoped quantum wells (QWs) as well as for direct intersubband and indirect intrasubband (Drude-like) transitions in $n$-doped QW structures.
We have studied theoretically optical reflection spectra from the Bragg multiple quantum well structures. We give an analytical explanation of the presence of two special frequencies in the spectra at which the reflection coefficient weakly depends on the quantum well number. The influence of the exciton nonradiative damping on the reflection spectra has been analyzed. It has been shown that allowance for the dielectric contrast gives rise to the third special frequency at which the contributions to the reflectivity related to the dielectric contrast and the exciton resonance mutually compensate one another.
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number of Si atomic planes is microscopically demonstrated. The spin splitting oscillates with QW width and these oscillations related to the inter-valley reflection of an electron wave from the interfaces. It is shown that the splittings under study can efficiently be described by an extended envelope-function approach taking into account the spin- and valley-dependent interface mixing. The obtained results provide a theoretical base to the experimentally observed electron spin relaxation times in SiGe/Si/SiGe QWs.
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the polarization of the exciting light is changed from circular to linear or the transverse magnetic field of ~300 gauss (G) is applied. The interband absorption of the circularly polarized light results in a spin polarization of conduction electrons, which reaches 35% with increasing the pump intensity. The effects observed are explained by dynamical polarization of deep paramagnetic centers and spin-dependent capture of conduction electrons by these centers. The PL depolarization in a transverse magnetic field (Hanle effect) allows us to estimate the electron spin relaxation time in the range of 1 ns. Theoretically, it has been concluded that, due to the SDR, this long time is controlled by slow spin relaxation of bound electrons. In all the three alloy samples, a positive sign of the bound-electron g-factor is determined experimentally from the direction of their mean spin rotation in the magnetic field.
We have developed a theory of exciton-polariton band structure of resonant three-dimensional photonic crystals for arbitrary dielectric contrast and effective mass of the exciton that is excited in one of the compositional materials. The calculation has been carried out for a periodic array of spheres embedded in a dielectric matrix. It has been shown that the position of the lower branches of the polariton dispersion curve monotonously depends on the exciton effective mass and is determined by the coupling of light with the first few states of the mechanical exciton quantum confined inside each sphere. Particularly, we have studied the role of excitonic effects on the photonic-crystal band gap along the [001] direction of the Brillouin zone and presented an analytic description of the polariton dispersion in terms of the two-wave approximation.
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers.
As is well known the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by optical alignment of electron momenta. Here we show that the absorption of unpolarized light leads to generation of a pure spin current, although both the average electron spin and electric current vanish. We demonstrate this for direct interband and intersubband as well as indirect intraband (Drude-like) optical transitions in semiconductor quantum wells (QWs).
As is well known the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by optical alignment of electron momenta. Here we show that the absorption of unpolarized light in a quantum well (QW) leads to generation of a pure spin current, although both the average electron spin and electric current are vanishing.
We report on a theoretical study of the fine structure of excited excitonic levels in semiconductor quantum disks. A particular attention is paid to the effect of electron-hole long-range exchange interaction. We demonstrate that, even in the axisymmetric quantum disks, the exciton P-shell is split into three sublevels. The analytical results are obtained in the limiting cases of strong and weak confinement. A possibility of exciton spin relaxation due to the resonant LO-phonon-assisted coupling between the P and S shells is discussed.
We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective g factor, in perfect agreement with the energy level calculations.