arXiv subjects

Eli Rotenberg

Publications and source records attributed to Eli Rotenberg.

138 records · Page 8Linked to original sources

arXiv2009

Quasiparticle Transformation During a Metal-Insulator Transition in Graphene

Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.

cond-mat.mes-hall↗

arXiv2008

Self-consistent analysis of electron-phonon coupling parameters of graphene

We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confirms that sizeable kinks in the electronic dispersion at the Dirac energy ED and near the Fermi level EF arise from many-body interactions, not single-particle effects such as substrate bonding or extra bands. The relative electron-phonon scattering rate from phonons at different energy scales evolves with doping. The electron-phonon coupling strength is extracted and found to be much larger (~3.5-5 times) than predicted.

cond-mat.str-el↗

arXiv2008

Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.

cond-mat.mtrl-sci↗

arXiv2008

Van Hove Singularity and Apparent Anisotropy in the Electron-Phonon Interaction in Graphene

We show that the electron-phonon coupling strength obtained from the slopes of the electronic energy vs. wavevector dispersion relations, as often done in analyzing angle-resolved photoemission data, can differ substantially from the actual electron-phonon coupling strength due to the curvature of the bare electronic bands. This effect becomes particularly important when the Fermi level is close to a van Hove singularity. By performing {\it ab initio} calculations on doped graphene we demonstrate that, while the apparent strength obtained from the slopes of experimental photoemission data is highly anisotropic, the angular dependence of the actual electron-phonon coupling strength in this material is negligible.

cond-mat.mtrl-sci↗

arXiv2007

Morphology of graphene thin film growth on SiC(0001)

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

cond-mat.mtrl-sci↗

arXiv2007

Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.

cond-mat.str-el↗

arXiv2007

Symmetry Breaking in Few Layer Graphene Films

Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extracting such parameters from ARPES. We also present detailed arguments against the possibility of an energy gap at the Dirac crossing ED.

cond-mat.str-el↗

arXiv2007

Massive enhancement of electron-phonon coupling in doped graphene by an electronic singularity

The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other electrons or both have been proposed to explain superconductivity. In the high-Tc cuprates, the presence of a Van Hove singularity (VHS) in the density of states near the Fermi level was long ago proposed to enhance the many-body couplings and therefore may play a role in superconductivity. Such a singularity can cause an anisotropic variation in the coupling strength, which may partially explain the so-called nodal-antinodal dichotomy in the cuprates. Here we show that the topology of the graphene band structure at dopings comparable to the GICs is quite similar to that of the cuprates and that the quasiparticle dynamics in graphene have a similar dichotomy. Namely, the electron-phonon coupling is highly anisotropic, diverging near a saddle point in the graphene electronic band structure. These results support the important role of the VHS in layered materials and the possible optimization of Tc by tuning the VHS with respect to the Fermi level.

cond-mat.str-el↗

arXiv2006

Interlayer interaction and electronic screening in multilayer graphene

The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we derive the layer-dependent carrier concentration, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.

cond-mat.mtrl-sci↗

arXiv2006

Experimental Determination of the Spectral Function of Graphene

A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k) space--the Dirac crossing, at energy $E_{D} = \hbar ω_{D}$. Direct investigations of the accuracy of this bandstructure, the validity of the quasiparticle picture, and the influence of many-body interactions on the electronic structure have not been addressed for pure graphene by experiment to date. Using angle resolved photoelectron spectroscopy (ARPES), we find that the expected conical bands are distorted by strong electron-electron, electron-phonon, and electron-plasmon coupling effects. The band velocity at $E_{F}$ and the Dirac crossing energy $E_{D}$ are both renormalized by these many-body interactions, in analogy with mass renormalization by electron-boson coupling in ordinary metals. These results are of importance not only for graphene but also graphite and carbon nanotubes which have similar bandstructures.

cond-mat.str-el↗

arXiv2005

Spin-Polarized Standing Waves in the Fermi Surface of a Ferromagnetic Thin Film

The spin-selective electron reflection at a ferromagnetic-paramagnetic interface is investigated using Fe films on a W(110) substrate. Angle-resolved photoemission of the majority and minority Fermi surfaces of the Fe film is used to probe standing wave formation. Intense quantum well states resulting from interfacial reflection are observed exclusively for majority states. Such high spin polarization is explained by the Fermi surface topology of the connecting substrate, and we argue that Fe/W is a particularly suitable interface for that purpose.

cond-mat.other↗

arXiv2005

Fermi Surface and Electron Correlation Effects of Ferromagnetic Iron

The electronic band structure of bulk ferromagnetic iron is explored by angle-resolved photoemission for electron correlation effects. Fermi surface cross-sections as well as band maps are contrasted with density functional calculations. The Fermi vectors and band parameters obtained from photoemission and their prediction from band theory are analyzed in detail. Generally good agreement is found for the Fermi surface. A bandwidth reduction for shallow bands of ~ 30 % is observed. Additional strong quasiparticle renormalization effects are found near the Fermi level, leading to a considerable mass enhancement. The role of electronic correlation effects and the electronic coupling to magnetic excitations is discussed in view of the experimental results.

cond-mat.str-el↗