arXiv subjects

Eli Yablonovitch

Publications and source records attributed to Eli Yablonovitch.

29 records · Page 2Linked to original sources

arXiv2009

Demonstration of a Plasmonic Dimple Lens for Nanoscale Focusing of Light

Focusing electromagnetic energy to sub-wavelength dimensions has become an increasingly active field of research for a variety of applications such as Heat Assisted Magnetic Recording (HAMR), nanolithography, and nanoscale optical characterization of biological cells and single molecules using near-field scanning optical microscopy (NSOM) technique. Double-sided surface plasmons in a metal-insulator-metal (MIM) geometry have been shown to have very small wavelengths for dielectric of thickness of less than 10 nm. A tapered dielectric structure sandwiched between metal, can be used to efficiently couple electromagnetic energy from free space photons to the plasmonic wavelengths at the nanoscale. In this paper, we present the fabrication and characterization of a novel MIM plasmonic lens structure.

physics.optics↗

arXiv2007

Numerical optimization of a grating coupler for the efficient excitation of surface plasmons at an Ag-SiO2 interface

The efficient generation of surface plasmons from free space optical waves is still an open problem in the field. Here we present a methodology and optimized design for a grating coupler. The photo-excitation of surface plasmons at an Ag-SiO2 interface is numerically demonstrated to yield greater than 50% coupling from a Gaussian beam into surface plasmon voltages and currents.

physics.optics↗

arXiv2005

Eigenvalue Estimation of Differential Operators

We demonstrate how linear differential operators could be emulated by a quantum processor, should one ever be built, using the Abrams-Lloyd algorithm. Given a linear differential operator of order 2S, acting on functions psi(x_1,x_2,...,x_D) with D arguments, the computational cost required to estimate a low order eigenvalue to accuracy Theta(1/N^2) is Theta((2(S+1)(1+1/nu)+D)log N) qubits and O(N^{2(S+1)(1+1/nu)} (D log N)^c) gate operations, where N is the number of points to which each argument is discretized, nu and c are implementation dependent constants of O(1). Optimal classical methods require Theta(N^D) bits and Omega(N^D) gate operations to perform the same eigenvalue estimation. The Abrams-Lloyd algorithm thereby leads to exponential reduction in memory and polynomial reduction in gate operations, provided the domain has sufficiently large dimension D > 2(S+1)(1+1/nu). In the case of Schrodinger's equation, ground state energy estimation of two or more particles can in principle be performed with fewer quantum mechanical gates than classical gates.

quant-ph↗

arXiv2005

What is the Fastest Speed at which a Single Electron Can Be Detected?

Electrometers measure electric charge, but there must be a fundamental speed limit to measuring one electric charge. Since there are no dimensional inputs to this question, the answer must be expressible in terms of the fundamental physical constants of Nature, e,h,m,c. In general the question should be posed without reference to any specific technology, but for definiteness, we analyze the field effect transistor, which is essentially an electrometer. In spite of selecting a specific technology, we find that the speed limit is related to a fundamental constant, the Rydberg frequency, or as appropriate, the semiconductor Rydberg frequency including the electron effective mass, and the relative dielectric constant. We do not know whether the Rydberg frequency represents the upper speed limit, but on dimensional grounds we claim that the final limit can only differ by some power of the fine-structure-constant.

quant-ph↗

arXiv2004

Single photo-electron trapping, storage, and detection in a one-electron quantum dot

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.

quant-ph↗

arXiv2002

A single photoelectron transistor for quantum optical communications

A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.

quant-ph↗

arXiv2002

Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling

Using time-resolved photoluminescence measurements, the recombination rate in an In$_{0.18}$Ga$_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fermi's golden rule, reveals the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QWs placed closer to the surface metal coating.

cond-mat.mtrl-sci↗

arXiv2001

Photoconductance Quantization in a Single-Photon Detector

We have made a single-photon detector that relies on photoconductive gain in a narrow electron channel in an AlGaAs/GaAs 2-dimensional electron gas. Given that the electron channel is 1-dimensional, the photo-induced conductance has plateaus at multiples of the quantum conductance 2e$^{2}$/h. Super-imposed on these broad conductance plateaus are many sharp, small, conductance steps associated with single-photon absorption events that produce individual photo-carriers. This type of photoconductive detector could measure a single photon, while safely storing and protecting the spin degree of freedom of its photo-carrier. This function is valuable for a quantum repeater that would allow very long distance teleportation of quantum information.

quant-ph↗

arXiv2001

Electron g-factor Engineering in III-V Semiconductors for Quantum Communications

An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells

quant-ph↗

arXiv2000

A spin-coherent semiconductor photo-detector for quantum communication

We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence band. The degeneracy of the valence band is lifted by the combination of strain and a static magnetic field. We give a detailed description of a semiconductor structure that transfers photon polarization to electron spin coherently, and allows electron spins to be stored and to be made available for quantum information processing.

quant-ph↗

arXiv1999

Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological basis for quantum information processing. One and two qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g-factor (Si:g=1.995, Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain Silicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

quant-ph↗