arXiv subjects

G. E. Marques

Publications and source records attributed to G. E. Marques.

29 records · Page 2Linked to original sources

arXiv2006

Dispersion of confined optical phonons in semiconductor nanowires in the framework of acontinuum approach

Confined optical phonons are discussed for a semiconductor nanowire of the Ge (Si)prototype on the basis of a theory developed some years ago. In the present work this theory is adapted to a non polar material and generalized to the case when the phonon dispersion law involves both linear and quadratic terms in the wave vector. The treatment is considered along the lines of a continuous medium model and leads to a system of coupled differential equations describing oscillations of mixed nature. The nanowire is modelled in the form of an infinite circular cylinder and the solutions of the fundamental equations are found. We are thus led to a description of long wavelength optical phonons, which should show a closer agreement with experimental data and with calculations along atomistic models. The presented theory is applied to the calculation of optical phonons in a Ge nanowire. We have found the dispersion curves for various optical phonon modes. We also normalize the modes and discuss the electron-phonon interaction within the deformation potential approximation.

cond-mat.mtrl-sci↗

arXiv2006

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.

cond-mat.mes-hall↗

arXiv2005

Confined polar optical phonons in semiconductor double heterostructures: an improved continuum approach

Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of electro-mechanical oscillations and involves dispersive phonons. This approach has provided results beyond the usually applied dielectric continuum models, where just the electric aspect of the oscillations is analyzed. In the previous works on the subject the theory included phonon dispersion within a quadratic (parabolic) approximation, while presently linear contributions were added by a straightforward extension of the fundamental equations. The generalized version of the mentioned theoretical treatment leads to a description of long wavelength polar optical phonons showing a closer agreement with experimental data and with calculations along atomistic models. This is particularly important for systems where the linear contribution to dispersion becomes predominant. We present a systematic derivation of the underlying equations, their solutions for the bulk and SDH cases, providing us a complete description of the dispersive modes and the associated electron-phonon Hamiltonian. The results obtained are applied to the case of a EuS/PbS/EuS quantum-well.

cond-mat.mes-hall↗

arXiv2004

Multichannel field-effect spin barrier selector

We have studied spin carrier dynamics under full spin-orbit coupling. The anisotropy of dispersions for independent circular spinor polarizations is explored as a possible vertical multichannel voltage controlled spin-filter. Small voltage variations are found to select the current polarizations in a resonant tunneling geometry.

cond-mat.mes-hall↗

arXiv2004

Spin-orbit coupling and magnetic spin states in cylindrical quantum dots

We make detailed analysis of each possible spin-orbit coupling of zincblende narrow-gap cylindrical quantum dots built in two-dimensional electron gas. These couplings are related to both bulk (Dresselhaus) and structure (Rashba) inversion asymmetries. We study the competition between electron-electron and spin-orbit interactions on electronic properties of 2-electron quantum dots.

physics.atom-ph↗

arXiv2004

Restricted and unrestricted Hartree-Fock approaches for addition spectrum and Hund's rule of spherical quantum dots in a magnetic field

The Roothaan and Pople-Nesbet approaches for real atoms are adapted to quantum dots in the presence of a magnetic field. Single-particle Gaussian basis sets are constructed, for each dot radius, under the condition of maximum overlap with the exact functions. The chemical potential, the charging energy and the total spin expected values have been calculated, and we have verified the validity of the quantum dot energy shell structure as well as the Hund rule for electronic occupation at zero magnetic field. For finite field, we have observed the violation of Hund's rule and studied the influence of magnetic field on the closed and open energy shell configurations. We have also compared the present results with those obtained with LS-coupling scheme for low electronic occupation numbers. We focus only on ground state properties and consider quantum dots populated up to forty electrons, constructed by GaAs or InSb semiconductors.

physics.atom-ph↗

arXiv2004

The violation of the Hund's rule in semiconductor artificial atoms

The unrestricted Pople-Nesbet approach for real atoms is adapted to quantum dots, the man-made artificial atoms, under applied magnetic field. Gaussian basis sets are used instead of the exact single-particle orbitals in the construction of the appropriated Slater determinants. Both system chemical potential and charging energy are calculated, as also the expected values for total and z-component in spin states. We have verified the validity of the energy shell structure as well as the Hund's rule state population at zero magnetic field. Above given fields, we have observed a violation of the Hund's rule by the suppression of triplets and quartets states at the 1p energy shell, taken as an example. We also compare our present results with those obtained using the LS-coupling scheme for low electronic occupations. We have focused our attention to ground-state properties for GaAs quantum dots populated up to forty electrons.

cond-mat.mes-hall↗

arXiv2003

Electron-phonon induced spin relaxation in InAs quantum dots

We have calculated spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential and piezoelectric electron-phonon coupling mechanisms are included within the Pavlov-Firsov spin-phonon Hamiltonian. Our results have demonstrated that, in narrow gap materials, the electron-phonon deformation potential and piezoelectric coupling give comparable contributions as spin relaxation processes. For large dots, the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the spin relaxation processes. We also have demonstrated that spin relaxation rates are particularly sensitive to the Landé $g$-factor.

cond-mat.mes-hall↗

arXiv2003

Tunneling effects on impurity spectral function in coupled asymmetric quantum wires

The impurity spectral function is studied in coupled double quantum wires at finite temperatures. Simple anisotropy in the confinement direction of the wires leads to finite non-diagonal elements of the impurity spectral function matrix. These non-diagonal elements are responsible for tunneling effects and result in pronounced extra peak in the impurity spectral function up to temperatures as high as 20 K.

cond-mat.str-el↗

arXiv2003

Spin-orbit coupling and intrinsic spin mixing in quantum dots

Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) $g$-factor and the Rashba field produce states where spin is no longer a good quantum number and intrinsic flips occur at moderate magnetic fields. For dots with two electrons, a singlet-triplet mixing occurs in the ground state, with observable signatures in intraband FIR absorption, and possible importance in quantum computation.

cond-mat.mes-hall↗

arXiv2001

Interface optical phonons in spheroidal dots: Raman selection rules

The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geometry are discussed and the corresponding Frohlich-like electron-phonon interaction is reported in the framework of the dielectric continuum approach. It is shown that the interface phonon modes are strongly dependent on the nanocrystal geometry, particularly on the ellipsoid's semi-axis ratio. The new Raman selection rules have revealed that solely interface phonon modes with even angular momentum are allowed to contribute to the first order phonon-assisted scattering of light. On this basis we are able to give an explanation for the observed low frequency shoulders present in the Raman cross-section of several II-VI semiconductor nanostructures.

cond-mat.mes-hall↗