SearcharxivSearch

arXiv subjects

G. Pellegrini

Publications and source records attributed to G. Pellegrini.

At least 19 recordsLinked to original sources

Design and Implementation of the Cosmic Ray Tagger System for the ICARUS detector at FNAL

The ICARUS-T600 Liquid Argon Time Projection Chamber is operating at Fermilab at shallow depth and thus exposed to a high flux of cosmic rays that can fake neutrino interactions. A cosmic ray tagging (CRT) system ($\sim$1100 m$^2$), surrounding the cryostat with two layers of fiber embedded plastic scintillators, was developed to mitigate the cosmic ray induced background. Using nanosecond-level timing information, the CRT can distinguish incoming cosmic rays from outgoing particles from neutrino interactions in the TPC. In this paper an overview of the CRT system, its installation and commissioning at Fermilab, and its performance are discussed.

hep-ex

Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications

LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.

physics.ins-det

Embedded software developments in KM3NeT phase I

The KM3NeT Collaboration has already produced more than one thousand acquisition boards, used for building two deep-sea neutrino detectors at the bottom of the Mediterranean Sea, with the aim of instrumenting a volume of several cubic kilometers with light sensors to detect the Cherenkov radiation produced in neutrino interactions. The the so-called Digital Optical Modules, house the PMTs and the acquisition and control electronics of the module, the Central Logic Board, which includes a Xilinx FPGA and embedded soft processor. The present work presents the architecture and functionalities of the software embedded in the soft processor of the Central Logic Board.

physics.ins-det

The OctoPAES board for the validation of KM3NeT data acquisition system

A test-bench has been set up at the INFN Sezione di Bologna to optimise key elements of the KM3NeT data acquisition system. A complete framework has been built to simulate a full detection unit and test the optical network, time synchronisation, and on-shore computing resources. A fundamental tool in the test-setup is a customized electronic board: "the OctoPAES". Based on an Altera MAX10 CPLD, it is designed to emulate in a realistic way the optical and acoustic signals recorded by the underwater detectors. They allow to test in extreme conditions the acquisition system and validate its performance with realistic data. If properly configured, the optical data provided by the OctoPAES can be combined to emulate the signals of a through-going muon or other calibration events. In this contribution the OctoPAES boards and some of their use cases at the test-bench are presented.

physics.ins-det

Measurements with silicon detectors at extreme neutron fluences

Thin pad detectors made from 75 $μ$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector current was measured under reverse and forward bias. The forward current was higher than the reverse at the same voltage but the difference gets smaller with increasing fluence. Rapid increase of current (breakdown) above ~ 700 V under reverse bias was observed. An annealing study at 60$^\circ$C was made to 1200 minutes of accumulated annealing time. It showed that the reverse current anneals with similar time constants as measured at lower fluences. A small increase of forward current due to annealing was seen. Collected charge was measured with electrons from $^{90}$Sr source in forward and reverse bias configurations. Under reverse bias the collected charge increased linearly with bias voltage up to 6000 electrons at 2.5$\times 10^{16}$ n/cm$^2$ and 3000 electrons at 1$\times 10^{17}$ n/cm$^2$. Rapid increase of noise was measured above $\sim$ 700 V reverse bias due to breakdown resulting in worse S/N ratio. At low bias voltages slightly more charge is measured under forward bias compared to reverse. However better S/N is achieved under reverse bias. Effective trapping times were estimated from charge collection measurements under forward bias showing that at high fluences they are much longer than values extrapolated from low fluence measurements - at 1$\times 10^{17}$ n/cm$^2$ a factor of 6 larger value was measured.

physics.ins-det

Performance of a Front End prototype ASIC for picosecond precision time measurements with LGAD sensors

For the High-Luminosity phase of LHC, the ATLAS experiment is proposing the addition of a High Granularity Timing Detector (HGTD) in the forward region to mitigate the effects of the increased pile-up. The chosen detection technology is Low Gain Avalanche Detector (LGAD) silicon sensors that can provide an excellent timing resolution below 50 ps. The front-end read-out ASIC must maintain the performance of the sensor, while keeping low power consumption. This paper presents the results on the first prototype of a front-end ASIC, named ALTIROC0, which contains the analog stages (preamplifier and discriminator) of the read-out chip. The ASIC was characterised both alone and as part of a module with a 2$\times$2 LGAD array of 1.1$\times$1.1 mm$^2$ pads bump-bonded to it. The various contributions of the electronics to the time resolution were investigated in test-bench measurements with a calibration setup. Both when the ASIC is alone or with a bump-bonded sensor, the jitter of the ASIC is better than 20 ps for an injected charge of 10 fC. The time walk effect that arises from the different response of the preamplifier for various injected charges can be corrected up to 10 ps using a Time Over Threshold measurement. The combined performance of the ASIC and the LGAD sensor, which was measured during a beam test campaign in October 2018 with pions of 120 GeV energy at the CERN SPS, is around 40 ps for all measured modules. All tested modules show good efficiency and time resolution uniformity.

physics.ins-det

Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications

Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.

physics.ins-det

Performance of Irradiated RD53A 3D Pixel Sensors

The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~μm^{2}}$ and $\mathrm{25 \times 100~μm^{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $\mathrm{5 \times 10^{15}~n_{eq}/cm^{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.

physics.ins-det

Timing performance of small cell 3D silicon detectors

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.

physics.ins-det

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$

Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50$\times$50 $μ$m$^{2}$ devices has been measured in the laboratory and beam tests at CERN SPS. A high charge collected and a high hit efficiency of 98% were found up to the highest fluence. The bias voltage to reach the target efficiency of 97% at perpendicular beam incidence was found to be about 100 V at $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ and 150 V at $2.8\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, significantly lower than for the previous IBL 3D generation with larger inter-electrode distance and than for planar sensors. The power dissipation at -25$^{\circ}$C and $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ was found to be 13 mW/cm$^2$. Hence, 3D pixel detectors demonstrated superior radiation hardness and were chosen as the baseline for the inner layer of the ATLAS HL-LHC pixel detector upgrade.

physics.ins-det

Beam test measurements of Low Gain Avalanche Detector single pads and arrays for the ATLAS High Granularity Timing Detector

For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few μm. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.

physics.ins-det

First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC

A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.

physics.ins-det

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

physics.ins-det

Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences

A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.

physics.ins-det

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 $μ$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$. The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.

physics.ins-det

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.

physics.ins-det

Module production of the one-arm AFP 3D pixel tracker

The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions. AFP will consist of a tracking detector, to measure the momentum of the protons, and a time of flight system to reduce the background from multiple proton-proton interactions. Following an extensive qualification period, 3D silicon pixel sensors were selected for the AFP tracker. The sensors were produced at CNM (Barcelona) during 2014. The tracker module assembly and quality control was performed at IFAE during 2015. The assembly of the first AFP arm and the following installation in the LHC tunnel took place in February 2016. This paper reviews the fabrication process of the AFP tracker focusing on the pixel modules.

physics.ins-det

Ultra Thin 3D Silicon Detector for Plasma Diagnostics at the ITER Tokamak

An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented

physics.ins-det