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arXiv · 1806.01435

First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC

E. Currás·J. Duarte-Campderrós·M. Fernández·A. García·G. Gómez·J. González·R. Jaramillo·D. Moya·I. Vila·S. Hidalgo·M. Manna·G. Pellegrini·D. Quirion·D. Pitzl·A. Ebrahimi·T. Rohe·S. Wiederkehr
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Abstract

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.

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E. Currás, J. Duarte-Campderrós, M. Fernández, A. García, G. Gómez, J. González, R. Jaramillo, D. Moya, I. Vila, S. Hidalgo, M. Manna, G. Pellegrini, D. Quirion, D. Pitzl, A. Ebrahimi, T. Rohe, S. Wiederkehr. 2018-06-04. First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC. https://doi.org/10.1016/j.nima.2019.04.037

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