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arXiv · 1707.01045

Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences

J. Lange·S. Grinstein·M. Manna·G. Pellegrini·D. Quirion·S. Terzo·D. Vázquez Furelos
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Abstract

A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.

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J. Lange, S. Grinstein, M. Manna, G. Pellegrini, D. Quirion, S. Terzo, D. Vázquez Furelos. 2017-07-04. Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences. https://arxiv.org/abs/1707.01045

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