arXiv subjects

Gabor Csanyi

Publications and source records attributed to Gabor Csanyi.

25 records · Page 2Linked to original sources

arXiv2008

Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding

We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidised Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO2 polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress and interactions with single water molecules of a natively oxidised Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidised and amorphous silica surfaces of 97 mJ/m2 and 90mJ/m2, respectively, at a water adsorption coverage of approximately 1 monolayer. The difference arises from the stronger interaction of the natively oxidised surface with liquid water, resulting in a higher heat of immersion (203 mJ/m2 vs. 166 mJ/m2), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller density with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.

cond-mat.mtrl-sci↗

arXiv2006

Graphite intercalation compounds under pressure

Motivated by recent experimental work, we use first-principles density functional theory methods to conduct an extensive search for low enthalpy structures of C$_6$Ca under pressure. As well as a range of buckled structures, which are energetically competitive over an intermediate range of pressures, we show that the high pressure system ($\gtrsim 18$ GPa) is unstable towards the formation of a novel class of layered structures, with the most stable compound involving carbon sheets containing five- and eight-membered rings. As well as discussing the energetics of the different classes of low enthalpy structures, we comment on the electronic structure of the high pressure compound and its implications for superconductivity.

cond-mat.supr-con↗

arXiv2003

Structure of a large social network

We study a social network consisting of over $10^4$ individuals, with a degree distribution exhibiting two power scaling regimes separated by a critical degree $k_{\rm crit}$, and a power law relation between degree and local clustering. We introduce a growing random model based on a local interaction mechanism that reproduces all of the observed scaling features and their exponents. Our results lend strong support to the idea that several very different networks are simultenously present in the human social network, and these need to be taken into account for successful modeling.

cond-mat.stat-mech↗

arXiv2002

Accurate hyperfine couplings for C59N

We identify the shortcomings of existing ab initio quantum chemistry calculations for the hyperfine couplings in the recently characterized azafullerene, C59N. Standard gaussian basis sets in the context of all--electron calculations are insufficient to resolve the spin density near the cores of the atoms. Using the Projector Augmented Wave method implemented on top of a standard pseudopotential plane--wave density--functional framework, we compute significantly more accurate values for the Fermi contact interaction.

cond-mat.mtrl-sci↗

arXiv2000

New Physics of the $30^\circ$ Partial Dislocation in Silicon Revealed through {\em Ab Initio} Calculation

Based on {\em ab initio} calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. We present the first {\em ab initio} determination of the free energy of the soliton, which is also in agreement with the experimental observation. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

cond-mat.mtrl-sci↗

arXiv1999

Tensor product expansions for correlation in quantum many-body systems

We explore a new class of computationally feasible approximations of the two-body density matrix as a finite sum of tensor products of single-particle operators. Physical symmetries then uniquely determine the two-body matrix in terms of the one-body matrix. Representing dynamical correlation alone as a single tensor product results in a theory which predicts near zero dynamical correlation in the homogeneous electron gas at moderate to high densities. But, representing both dynamical and statistical correlation effects together as a tensor product leads to the recently proposed ``natural orbital functional.'' We find that this latter theory has some asymptotic properties consistent with established many-body theory but is no more accurate than Hartee-Fock in describing the homogeneous electron gas for the range of densities typically found in the valence regions of solids. PACS 71.10.-w 71.15.Mb, Accepted for publication in Physical Review B

cond-mat.mtrl-sci↗

arXiv1998

Paramagnetic structure for the soliton of the $30^\circ$ partial dislocation in silicon

Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

cond-mat.mtrl-sci↗