arXiv subjects

Gan Wang

Publications and source records attributed to Gan Wang.

23 records · Page 2Linked to original sources

arXiv2017

Topological surface electronic states in candidate nodal-line semimetal CaAgAs

We investigate systematically the bulk and surface electronic structure of the candidate nodal-line semimetal CaAgAs by angle resolved photoemission spectroscopy and density functional calculations. We observed a metallic, linear, non-$k_z$-dispersive surface band that coincides with the high-binding-energy part of the theoretical topological surface state, proving the topological nontriviality of the system. An overall downshift of the experimental Fermi level points to a rigid-band-like $p$-doping of the samples, due possibly to Ag vacancies in the as-grown crystals.

cond-mat.mtrl-sci↗

arXiv2017

Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.

cond-mat.mtrl-sci↗

arXiv2014

Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak anti-localization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.

cond-mat.mes-hall↗

arXiv2014

Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructure

Superconductivity at the interface of a heterostructure confined to nanometer-sized scale offers unique opportunities to study the exotic physics of two-dimensional superconductivity. The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here, we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.

cond-mat.supr-con↗

arXiv2011

Impurity effect on weak anti-localization in the topological insulator Bi2Te3

We study weak anti-localization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. Two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magneto-conductance. Our data demonstrates that the observed WAL is robust against deposition of non-magnetic Au impurities on the surface of the thin films. But it is quenched by deposition of magnetic Fe impurities which destroy the pi Berry's phase of the topological surface states. The magneto-conductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.

cond-mat.mes-hall↗