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H. Kojima

Publications and source records attributed to H. Kojima.

31 records · Page 2Linked to original sources
arXiv2008

Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.

cond-mat.dis-nn↗
arXiv2008

New Dissipation Relaxation Phenomenon in Oscillating Solid He-4

We describe the first observations on the time-dependent dissipation when the drive level of a torsional oscillator containing solid He-4 is abruptly changed. The relaxation of dissipation in solid He-4 shows rich dynamical behavior including exponential and logarithmic time-dependent decays, hysteresis, and memory effects.

cond-mat.other↗
arXiv2007

Oscillation Frequency Dependence of Non-Classical Rotation Inertia of Solid $^4$He

The non-classical rotational inertia fraction of the identical cylindrical solid $^4$He below 300 mK is studied at 496 and 1173 Hz by a double resonance torsional oscillator. Below 35 mK, the fraction is the same at sufficiently low rim velocities. Above 35 mK, the fraction is greater for the higher than the lower mode. The dissipation peak of the lower mode occurs at a temperature $\sim$ 4 mK lower than that of the higher mode. The drive dependence of the two modes shows that the reduction of the fraction is characterized by critical velocity, \textit{not} amplitude nor acceleration.

cond-mat.other↗
arXiv2007

Intervalley scattering and weak localization in Si-based two-dimensional structures

We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering.

cond-mat.dis-nn↗
arXiv2006

Minority Spin Condensate in Spin-Polarized Superfluid $^3$He-A$_1$ Phase

The spin-polarized superfluid $^3$He A$_1$ phase, which forms below 3 mK in external magnetic field, serves as a material in which theoretical notions of fundamental magnetic processes and macroscopic quantum spin phenomena may be tested. Conventionally, the superfluid component of the A$_1$ phase is understood to contain only the majority spin condensate having energetically-favoured paired spins directed along the external field and no minority spin condensate having paired spins in the opposite direction. We have developed a novel mechanical spin density detector to measure the spin relaxation in the A$_1$ phase as functions of temperature, pressure and magnetic field. The mechanical spin detector is based in principle on the unique magnetic fountain effect occurring only in the A$_1$ phase (occurring between two transition temperatures, T$_{c1}$ and T$_{c2}$). Unexpectedly, the spin relaxation rate increases rapidly as the temperature is decreased towards T$_{c2}$. Our measurements, together with Leggett-Takagi and Monien-Tewordt theories, demonstrate that a minute presence of minority spin pairs is responsible for the unexpected spin relaxation phenomena in A$_1$ phase.

cond-mat.other↗
arXiv2004

Reply to Comment (cond-mat/0311174)

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.

cond-mat.str-el↗
arXiv2004

On the Electron-Electron Interactions in Two Dimensions

In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.

cond-mat.str-el↗
arXiv2002

Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers

We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) at even lower densities, we have analyzed the data on χ*(n) and m*(n) in terms of a critical dependence χ*, m* ~ (n/n_0 -1)^{-α}. Our data suggest that χ* and m* may diverge at n_0 < 0.5x10^{11}/cm^2 (r_s > 12), which is significantly smaller than n_c.

cond-mat.str-el↗
arXiv2002

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).

cond-mat.str-el↗
arXiv2002

Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality

In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, measured in the vicinity of the metal-insulator transition in 2D, carry a strong imprint of individuality of the quenched disorder determined by V^{cool}. This demonstrates that the observed transition between ``metallic'' and insulating regimes involves both, universal effects of electron-electron interaction and sample-specific effects. Far away from the transition, at lower carrier densities and lower resistivities < 0.1 h/e^2, the transport and magnetotransport become nearly universal.

cond-mat.str-el↗
arXiv2001

The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $χ^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $χ^*$ by a factor of $\sim 4.7$.

cond-mat.mes-hall↗
arXiv1998

Normal-state magnetotransport in La_{1.905}Ba_{0.095}CuO_{4} single crystals

The normal-state magnetotransport properties of La_{2-x}Ba_{x}CuO_{4} single crystals with x=0.095 are measured; at this composition, a structural transition to a low-temperature-tetragonal (LTT) phase occurs without suppression of superconductivity. None of the measured properties (in-plane and out-of-plane resistivity, magnetoresistance, and Hall coefficient) shows any sudden change at the LTT phase transition, indicating that the occurrence of the LTT phase does not necessarily cause an immediate change in the electronic state such as the charge-stripe stabilization.

cond-mat.supr-con↗