arXiv subjects

H. Ohno

Publications and source records attributed to H. Ohno.

At least 73 records · Page 4Linked to original sources

arXiv2009

Fixed Scale Approach to Equation of State in Lattice QCD

A new approach to study the equation of state in finite-temperature QCD is proposed on the lattice. Unlike the conventional method in which the temporal lattice size $N_t$ is fixed, the temperature $T$ is varied by changing $N_t$ at fixed lattice scale. The pressure of the hot QCD plasma is calculated by the integration of the trace anomaly with respect to $T$ at fixed lattice scale. This "$T$-integral method" is tested in quenched QCD on isotropic and anisotropic lattices and is shown to give reliable results especially at intermediate and low temperatures.

hep-lat↗

arXiv2008

Thermodynamics of SU(3) gauge theory at fixed lattice spacing

We study thermodynamics of SU(3) gauge theory at fixed scales on the lattice, where we vary temperature by changing the temporal lattice size N_t=(Ta_t)^{-1}. In the fixed scale approach, finite temperature simulations are performed on common lattice spacings and spatial volumes. Consequently, we can isolate thermal effects in observables from other uncertainties, such as lattice artifact, renormalization factor, and spatial volume effect. Furthermore, in the EOS calculations, the fixed scale approach is able to reduce computational costs for zero temperature subtraction and parameter search to find lines of constant physics, which are demanding in full QCD simulations. As a test of the approach, we study the thermodynamics of the SU(3) gauge theory on isotropic and anisotropic lattices. In addition to the equation of state, we calculate the critical temperature and the static quark free energy at a fixed scale.

hep-lat↗

arXiv2008

Charmonium dissociation temperatures in lattice QCD with a finite volume technique

Dissociation temperatures of J/ψ, ψ', and χ_c states play key roles in the sequential J/ψsuppression scenario for high energy heavy ion collisions. We report on a study of charmonium dissociation temperatures in quenched lattice QCD. On anisotropic lattices, we first subtract the effects of the constant mode in finite temperature meson correlators, which have lead to unphysical results in previous studies. We then extract ground and first exited state masses by diagonalizing correlation functions among different source and sink operators. To distinguish bound states from scattering states, we first compare the charmonium mass spectra under different spatial boundary conditions, and examine the shape and the volume-dependence of their Bethe-Salpeter wave functions. From these studies, we found so far no sign of scattering states up to about 2.3T_c.

hep-lat↗

arXiv2008

Electrical control of spin coherence in ZnO

Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n-type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin lifetime at 20 K, without affecting the effective g-factor. This effect persists till high temperatures, but decreases with increasing carrier concentration. Comparisons of the variations in the spin lifetime, the carrier recombination lifetime and photoluminescence lifetimes indicate that the applied E enhances the radiative recombination rate. All observed effects are independent of crystal directionality and are performed at low magnetic fields (B < 0.2 T).

cond-mat.mtrl-sci↗

arXiv2008

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

cond-mat.mes-hall↗

arXiv2007

0.7-anomaly and magnetotransport of disordered quantum wires

The unexpected "0.7" plateau of conductance quantisation is usually observed for ballistic one-dimensional devices. In this work we study a quasi-ballistic quantum wire, for which the disorder induced backscattering reduces the conductance quantisation steps. We find that the transmission probability resonances coexist with the anomalous plateau. The studies of these resonances as a function of the in-plane magnetic field and electron density point to the presence of spin polarisation at low carrier concentrations and constitute a method for the determination of the effective g-factor suitable for disordered quantum wires.

cond-mat.mes-hall↗

arXiv2007

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.

cond-mat.mtrl-sci↗

arXiv2006

Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

cond-mat.mtrl-sci↗

arXiv2006

Domain-wall resistance in ferromagnetic (Ga,Mn)As

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization.

cond-mat.mtrl-sci↗

arXiv2004

Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.

cond-mat.mtrl-sci↗

arXiv2003

Modeling and simulation of polycrystalline ZnO thin-film transistors

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.

cond-mat↗

arXiv2003

Probing dark energy with gamma-ray bursts

We propose a new method to use gamma-ray bursts (GRBs) as an alternative probe of the dark energy. By calibrating luminosity-variability and luminosity-lag time relations at low redshift where distance-redshift relations have been already determined from type Ia supernova (SNIa), GRBs at high redshift can be used as a distance indicator. We investigate the potential impact of future GRB data on determining the current matter density $Ω_{m}$ and the dark energy equation of state $w$ which is assumed to be constant. We show that a combined analysis of a data set expected from the {\it Swift} and the current SNIa data results in excellent determination of both $Ω_{m}$ and $w$.

astro-ph↗

arXiv2002

High-resolution Photoemission Study of Cd2Re2O7

High-resolution bulk-sensitive photoemission has been measured for pyrochlore oxide Cd2Re2O7. Temperature variations of the spectral shapes between 20 and 250 K are obviously observed for the Re 4f inner core and the valence band spectra. The Re 5d states are dominant for the DOS near the Fermi level.

cond-mat.str-el↗

arXiv2002

Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.

cond-mat.mes-hall↗

arXiv2001

Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both strong increase of E_b and evolution of Mn spin-resonance spectrum with the magnitude of valence-band offsets. For such a structure of Mn impurity in III-V materials, possible models accounting for the recently determined Curie temperature of about 940 K in a compensated Ga(0.91)Mn(0.09)N are discussed.

cond-mat.mtrl-sci↗

arXiv2001

Superconductivity in a pyrochlore oxide Cd2Re2O7

We make the first report that a metallic pyrochlore oxide \Cd2Re2O7, exhibits type II superconductivity at 1.1 K. The pyrochlore oxide is known to be a geometrical frustrated system, which includes the tetrahedral network of magnetic ions. A large number of compounds are classified in the family of pyrochlore oxides, and these compounds exhibit a wide variety of physical properties ranging from insulator through semiconductor and from bad metal to good metal. Until now, however, no superconductivity has been reported for frustrated pyrochlore oxides. The bulk superconductivity of this compound is confirmed by measurements of the resistivity and the a. c. magnetic susceptibility. The \Hc2, which is extrapolated to 0 K, is estimated as about 0.8 T, using the resistivity measurements under aplied field. The plot of \Hc2 vs $T$ indicates that the Cooper pairs are composed of rather heavy quasiparticles. This fact suggests that frustrated heavy electrons become superconducting in this compound.

cond-mat.str-el↗

arXiv2001

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic resonance. All components of the g-tensor are measured, and a strong anisotropy even along the in-plane directions is found. The amplitudes of the spin signal allow the study of the spatial directions of the injected spin and its precession axis. Surprisingly efficient dynamic nuclear polarization in a geometry where the electron spins are injected almost transverse to the applied magnetic field is attributed to an enhanced non-precessing electron spin component. The small absolute value of the electron g-factor combined with efficient nuclear spin polarization leads to large nuclear fields that dominate electron spin precession at low temperatures. These effects allow for sensitive detection of all-optical nuclear magnetic resonance induced by periodically excited quantum-well electrons. The mechanism of previously observed Delta m = 2 transitions is investigated and found to be attributable to electric quadrupole coupling, whereas Delta m = 1 transitions show signatures of both quadrupole and electron-spin induced magnetic dipole coupling.

cond-mat.mes-hall↗

arXiv2000

Optical manipulation of nuclear spin by a two-dimensional electron gas

Conduction electrons are used to optically polarize, detect and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spin reveals a complete spectrum of optically-induced and quadrupolar-split nuclear resonances, as well as evidence for delta m = 2 transitions.

cond-mat.mes-hall↗