arXiv subjects

H. W. Jiang

Publications and source records attributed to H. W. Jiang.

27 records · Page 2Linked to original sources

arXiv2002

Compressibility of a two-dimensional hole gas in tilted magnetic field

We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field.

cond-mat.str-el↗

arXiv2001

Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency double excitations, we have observed that the ESR line can be pinned in a very narrow range of magnetic field - in the vicinity of the nuclear magnetic resonance (NMR) of the nuclei of the GaAs crystal. Our observations suggest that this pinning effect is the result of a competition process between the ESR induced dynamic nuclear polarization and the NMR induced depolarization.

cond-mat.mes-hall↗

arXiv2001

Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g-factors.

cond-mat.mes-hall↗

arXiv1999

Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the metal-insulator transition. Measurements also indicate that the insulating phase is incompressible for all values of B. Finally, we show how the phase transition evolves as the magnetic field is varied and construct a phase diagram in the density-magnetic field plane for this system.

cond-mat.mes-hall↗

arXiv1999

Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to Mott type localizations. Since a SHJ has an open valence band structure, these bound states are a unique property of the dynamic movement of the valence holes in strong magnetic fields.

cond-mat.mes-hall↗

arXiv1999

Topological Phase Diagram of a Two-Subband Electron System

We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall states in the density-magnetic filed plane. The experimental phase diagram shows a very different topology from the conventional Landau fan diagram. We find regions of negative differential Hall resistance which are interpreted as preliminary evidence of the long sought reentrant quantum Hall transitions. We discuss the origins of the anomalous topology and the negative differential Hall resistance in terms of the Landau level and subband mixing.

cond-mat.mes-hall↗

arXiv1998

Absence of Floating Delocalized States in a Two-Dimensional Hole Gas

By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure where delocalized states diverge in energy as B goes to zero indicating the presence of only localized states below the Fermi energy. The possible connection of this finding to the recently observed metal-insulator transition at B = 0 in the two-dimensional hole gas systems is discussed.

cond-mat.mes-hall↗

arXiv1997

Termination of the spin-resolved integer quantum Hall effect

We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δν_{N}changes rapidly from one to zero near a critical density n_{c}. Scaling analysis shows that δν_{N} collapses onto a single curve independent of N when plotted against the parameter (n-n_{c})/n_{c} for five Landau levels. The effect of increasing the Zeeman energy is also examined by tilting the direction of magnetic field relative to the plane of the two-dimensional electron gas. Our experiment suggests that the termination of the spin-resolved quantum Hall effect is a phase transition.

cond-mat.mes-hall↗

arXiv1997

Universality and Phase Diagram around Half-filled Landau Level

Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is temperature independent, has value sigma_{xy}=0.5 (e^{2}/h), and a distinct line on which rho_{xy}=2 (h/e^{2}). The phase boundaries between the Hall insulator and the principal quantum Hall liquids at nu=1 and 1/3 show levitation of the delocalized states of the first Landau levels for electrons and composite fermions. Finally, the data suggest that there is no true metallic phase around nu=1/2.

cond-mat.mes-hall↗