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Hiroshi Kumigashira

Publications and source records attributed to Hiroshi Kumigashira.

At least 37 records · Page 2Linked to original sources

Fermiology and Origin of Tc Enhancement in a Kagome Superconductor Cs(V1-xNbx)3Sb5

Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with charge-density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic ARPES study of Cs(V1-xNbx)3Sb5 as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temperature (Tc) and the reduction of CDW temperature (TCDW). We found that the Nb substitution shifts the Sb-derived electron band at the Gamma point downward and simultaneously moves the V-derived band around the M point upward to lift up the saddle point (SP) away from the Fermi level, leading to the reduction of CDW-gap magnitude and TCDW. This indicates a primary role of the SP density of states to stabilize CDW. The present result also suggests that the enhancement of superconductivity by Nb substitution is caused by the cooperation between the expansion of the Sb-derived electron pocket and the recovery of the V-derived density of states at the Fermi level.

cond-mat.supr-con↗

Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics

Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal.

cond-mat.mes-hall↗

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.

cond-mat.mtrl-sci↗

Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode material

This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying ${x}$. Systematic and significant spectral changes were found near the Fermi level (${E_{\rm F}}$) as a function of ${x}$, while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As ${x}$ decreases from 1.0, spectral weight transfer occurs from the coherent band near ${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating a significant reduction in quasiparticle spectral weight within close vicinity of ${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration ${n}$ changes proportionally as a function of ${x}$ in the metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (${m^*}$), does not change significantly with varying ${x}$. These results suggest that the key factor of ${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by ${x}$, highlighting the potential of STVO to achieve the desired TCO performance in the metallic region.

cond-mat.str-el↗

Local polarization and valence distribution in LaNiO3/LaMnO3 heterostructures

The inside of the electrical double layer at perovskite oxide heterointerfaces is examined. Here, we report the local polarization and valence distribution in LaNiO$_3$/LaMnO$_3$ and LaMnO$_3$/LaNiO$_3$ bilayers on a SrTiO$_3$ (001) substrate. Simultaneous measurements of two aspects of the structure are realized by using Bayesian inference based on resonant- and nonresonant-surface X-ray diffraction data. The results show that the average Mn valences are Mn$^{3.12+}$ and Mn$^{3.19+}$ for the two samples. The intensity of their local electric field is $\sim$1~GV/m and the direction of the field points from LaMnO$_3$ to LaNiO$_3$.

cond-mat.mtrl-sci↗

Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering

The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation.

cond-mat.str-el↗

Inter-valence charge transfer and charge transport in the spinel ferrite ferromagnetic semiconductor Ru-doped CoFe$_2$O$_4$

Inter-valence charge transfer (IVCT) is electron transfer between two metal $M$ sites differing in oxidation states through a bridging ligand: $M^{n+1} + M'^{m} \rightarrow M^{n} + M'^{m+1}$. It is considered that IVCT is related to the hopping probability of electron (or the electron mobility) in solids. Since controlling the conductivity of ferromagnetic semiconductors (FMSs) is a key subject for the development of spintronic device applications, the manipulation of the conductivity through IVCT may become a new approach of band engineering in FMSs. In Ru-doped cobalt ferrite CoFe$_2$O$_4$ (CFO) that shows ferrimagnetism and semiconducting transport properties, the reduction of the electric resistivity is attributed to both the carrier doping caused by the Ru substitution for Co and the increase of the carrier mobility due to hybridization between the wide Ru $4d$ and the Fe $3d$ orbitals. The latter is the so-called IVCT mechanism that is charge transfer between the mixed valence Fe$^{2+}$/Fe$^{3+}$ states facilitated by bridging Ru $4d$ orbital: Fe$^{2+}$ + Ru$^{4+}$ $\leftrightarrow$ Fe$^{3+}$ + Ru$^{3+}$. To elucidate the emergence of the IVCT state, we have conducted x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (RPES) measurements on non-doped CFO and Co$_{0.5}$Ru$_{0.5}$Fe$_2$O$_4$ (CRFO) thin films. The observations of the XAS and RPES spectra indicate that the presence of the mixed valence Fe$^{2+}$/Fe$^{3+}$ state and the hybridization between the Fe $3d$ and Ru $4d$ states in the valence band. These results provide experimental evidence for the IVCT state in CRFO, demonstrating a novel mechanism that controls the electron mobility through hybridization between the $3d$ transition-metal cations with intervening $4d$ states.

cond-mat.mtrl-sci↗

Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO$_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.

cond-mat.mtrl-sci↗

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

cond-mat.mes-hall↗

Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD

Perovskite-type manganites, which are well-known for their intriguing physical properties such as colossal magnetoresistance (CMR) and half metalicity, have been considered as candidate materials for spintronics. However, their ferromagnetic (FM) properties are often suppressed in thin films when the thickness is reduced down to several monolayers (MLs). In order to investigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM phase transition boundary, we have performed temperature-dependent x-ray magnetic circular dichroism (XMCD) experiments on a La$_{1-x}$Sr$_{x}$MnO$_3$ (LSMO, $x=0.4$) thin film, whose thickness (8 ML) is close to the boundary between the FM-metallic and the PM-insulating phases. By utilizing the element-selectiveness of XMCD, we have quantitatively estimated the fractions of the PM and superparamagnetic (SPM) phases as well as the FM one as a function of temperature. The results can be reasonably described based on a microscopic phase-separation model.

cond-mat.mtrl-sci↗

Hard and soft x-ray photoemission spectroscopy study of the new Kondo system SmO thin film

SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed valence. The valence-band photoemission spectra exhibit a clear Fermi edge originating from the Sm 5$d$-derived band. The present finding is consistent with the theory suggesting a possible topological state in SmO and show that rare-earth monoxides or their heterostructures can be a new playground for the interplay of strong electron correlation and spin-orbit coupling.

cond-mat.str-el↗

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

cond-mat.mtrl-sci↗

Unusual change in the Dirac-cone energy band upon two-step magnetic transition in CeBi

We have performed angle-resolved photoemission spectroscopy (ARPES) on CeBi which undergoes a two-step antiferromagnetic (AF) transition with temperature. Soft-x-ray ARPES has revealed the inverted band structure at the X point of bulk Brillouin zone for CeBi (and also for LaBi) as opposed to LaSb with non-inverted band structure. Low-energy ARPES on CeBi has revealed the Dirac-cone band at the Gamma point in the paramagnetic phase associated with the bulk band inversion. On the other hand, a double Dirac-cone band appears on entering the first AF phase at T = 25 K, whereas a single Dirac-cone band recovers below the second AF transition at T = 14 K. The present result suggests an intricate interplay between antiferromagnetism and topological surface states in CeBi.

cond-mat.mes-hall↗

Evidence for bulk nodal loops and universality of Dirac-node arc surface states in ZrGeXc (Xc = S, Se, Te)

We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the Fermi level with vacuum-ultraviolet photons combined with first-principles band-structure calculations elucidated a Dirac-node-arc surface state traversing a tiny spin-orbit gap associated with the nodal loops. We found that this surface state commonly exists in ZrGeXc despite the difference in the shape of nodal loops. The present results suggest that the spin-orbit coupling and the multiple nodal loops cooperatively play a key role in creating the exotic Dirac-node-arc surface states in this class of topological line-node semimetals.

cond-mat.mes-hall↗

Relationship between charge redistribution and ferromagnetism at the heterointerface between perovskite oxides LaNiO$_3$ and LaMnO$_3$

To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) measurements. In the LNO/LMO heterostructures with asymmetric charge redistribution, the electrons donated from Mn to Ni ions are confined within one monolayer (ML) of LNO at the interface, whereas holes are distributed over 3-4 ML on the LMO side. A detailed analysis of the Ni-$L_{2,3}$ and Mn-$L_{2,3}$ XMCD spectra reveals that Ni magnetization is induced only by the Ni$^{2+}$ ions in the 1 ML LNO adjacent to the interface, while the magnetization of Mn ions is increased in the 3-4 ML LMO of the interfacial region. The characteristic length scale of the emergent (increased) interfacial ferromagnetism of the LNO (LMO) layers is in good agreement with that of the charge distribution across the interface, indicating a close relationship between the charge redistribution due to the interfacial charge transfer and the ferromagnetism of the LNO/LMO interface. Furthermore, the XMCD spectra clearly demonstrate that the vectors of induced magnetization of both ions are aligned ferromagnetically, suggesting that the delicate balance between the exchange interactions occurring inside each layer and across the interface may induce the canted ferromagnetism of Ni$^{2+}$ ions, resulting in weak magnetization in the 1 ML LNO adjacent to the interface.

cond-mat.str-el↗

Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms

Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, beta = 97.94(7) deg. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.

cond-mat.supr-con↗

Emergence of metallic monoclinic states of VO$_2$ films induced by K deposition

In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal structures using ${in~situ}$ photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The deposition of K atoms onto a surface of insulating monoclinic VO$_2$ leads to a phase transition from insulator to metal. In this metallization state, the V-V dimerization characteristic to the monoclinic phase of VO$_2$ still exists, as revealed by the polarization dependence of the XAS spectra. Furthermore, the monoclinic metal undergoes a transition to a monoclinic insulator with decrease in temperature, and to a rutile metal with increase in temperature. These results indicate the existence of a metallic monoclinic phase around the boundary between the insulating monoclinic and metallic rutile phases in the case of electron-doped VO$_2$.

cond-mat.str-el↗

Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

cond-mat.mes-hall↗