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Hyunsoo Yang

Publications and source records attributed to Hyunsoo Yang.

At least 37 records · Page 2Linked to original sources

On the relationship between orbital moment anisotropy, magnetocrystalline anisotropy, and Dzyaloshinskii-Moriya interaction in W/Co/Pt trilayers

We have studied the Co layer thickness dependences of magnetocrystalline anisotropy (MCA), Dzyaloshinskii-Moriya interaction (DMI), and orbital moment anisotropy (OMA) in W/Co/Pt trilayers, in order to clarify their correlations with each other. We find that the MCA favors magnetization along the film normal and monotonically increases with decreasing effective magnetic layer thickness ($t_\mathrm{eff}$). The magnitude of the Dzyaloshinskii-Moriya exchange constant ($|D|$) increases with decreasing $t_\mathrm{eff}$ until $t_\mathrm{eff} \sim$1 nm, below which $|D|$ decreases. The MCA and $|D|$ scale with $1/t_\mathrm{eff}$ for $t_\mathrm{eff}$ larger than $\sim$1 nm, indicating an interfacial origin. The increase of MCA with decreasing $t_\mathrm{eff}$ continues below $t_\mathrm{eff}$ $\sim$ 1 nm, but with a slower rate. To clarify the cause of the $t_\mathrm{eff}$ dependences of MCA and DMI, the OMA of Co in W/Co/Pt trilayers is studied using x-ray magnetic circular dichroism (XMCD). We find non-zero OMA when $t_\mathrm{eff}$ is smaller than $\sim$0.8 nm. The OMA increases with decreasing $t_\mathrm{eff}$ more rapidly than what is expected from the MCA, indicating that factors other than OMA contribute to the MCA at small $t_\mathrm{eff}$. The $t_\mathrm{eff}$ dependence of the OMA also suggests that $|D|$ at $t_\mathrm{eff}$ smaller than $\sim$1 nm is not related to the OMA at the interface. We propose that the growth of Co on W results in a strain and/or texture that reduces the interfacial DMI, and, to some extent, MCA at small $t_\mathrm{eff}$.

cond-mat.mtrl-sci↗

Mimicking synaptic plasticity with wedged Pt/Co/Pt spin-orbit torque device

We fabricated a wedge-shaped Pt/Co/Pt device with perpendicular magnetic anisotropy and manifested that the Co magnetization can be solely switched by spin-orbit torque without any magnetic field. Similar to the synaptic weight, we observed that the state of Co magnetization (presented by the anomalous Hall resistance RH) of the wedged Pt/Co/Pt device can be tuned continuously with a large number of nonvolatile levels by applied pulse currents. Furthermore, we studied the synaptic plasticity of the wedged Pt/Co/Pt device, including the excitatory postsynaptic potentials or inhibitory postsynaptic potentials and spiking-time-dependent plasticity. The work elucidates the promise of the wedged Pt/Co/Pt device as a candidate for a new type of artificial synaptic device that is induced by a spin current and paves a substantial pathway toward the combination of spintronics and synaptic devices.

physics.app-ph↗

Chiral damping of magnons

Chiral magnets have garnered significant interest due to the emergence of unique phenomena prohibited in inversion-symmetric magnets. While the equilibrium characteristics of chiral magnets have been extensively explored through the Dzyaloshinskii-Moriya interaction (DMI), non-equilibrium properties like magnetic damping have received comparatively less attention. We present the inaugural direct observation of chiral damping through Brillouin light scattering (BLS) spectroscopy. Employing BLS spectrum analysis, we independently deduce the Dzyaloshinskii-Moriya interaction (DMI) and chiral damping, extracting them from the frequency shift and linewidth of the spectrum peak, respectively. The resulting linewidths exhibit clear odd symmetry with respect to the magnon wave vector, unambiguously confirming the presence of chiral damping. Our study introduces a novel methodology for quantifying chiral damping, with potential ramifications on diverse nonequilibrium phenomena within chiral magnets.

cond-mat.mtrl-sci↗

Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.

cond-mat.mtrl-sci↗

Roadmap for Unconventional Computing with Nanotechnology

In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries.

cs.ET↗

Spin current leakage and Onsager reciprocity in interfacial spin-charge interconversion

Experimental investigations of spin-charge interconversion in magnetic bilayers comprising a ferromagnet adjacent to a topological insulator have reported scattered results on the spin-charge and charge-spin conversion efficiency. Attempting to reconcile these contradicting experimental results, we develop a phenomenological theory of spin-charge interconversion accounting for both interfacial interconversion through the spin galvanic effect, also called the Rashba-Edelstein effect, as well as bulk interconversion via the spin Hall effect. We find that the spin current leakage into the nonmagnetic metal plays a central role during the spin-to-charge and charge-to-spin conversion, leading to dissymmetric interconversion processes. In particular, spin-to-charge conversion is much less sensitive to the spin current absorption in the nonmagnetic metal than charge-to-spin conversion. This suggests that spin pumping is a more trustable technique to extract the interfacial Rashba parameter than spin-orbit torque.

cond-mat.mes-hall↗

Visualization of out-of-plane spin generation in mirror symmetry broken Co

Generating out-of-plane spins in sputtered materials holds immense potential for achieving field-free spin-orbit torque switching in practical applications and mass production. In this work, we present the detection of out-of-plane spins from single-layer ferromagnetic Co layers, which are visualized through helicity-dependent photomapping techniques. Our experiments have shown that out-of-plane spin generation is dependent on the magnetization direction, current density, and Co thickness. Our findings indicate that amorphous sputtered Co can be a promising candidate as an out-of-plane spin source material for industrial massive production.

cond-mat.mtrl-sci↗

Dzyaloshinskii-Moriya torque-driven resonance in antiferromagnetic α-Fe2O3

We examine the high-frequency optical mode of α-Fe2O3 and report that Dzyaloshinskii-Moriya (DM) interaction generates a new type of torque on the magnetic resonance. Using a continuous-wave terahertz interferometer, we measure the optical mode spectra, where the asymmetric absorption with a large amplitude and broad linewidth is observed near the magnetic transition point, Morin temperature (TM ~ 254.3 K). Based on the spin wave model, the spectral anomaly is attributed to the DM interaction-induced torque, enabling to extract the strength of DM interaction field of 4 T. Our work opens a new avenue to characterize the spin resonance behaviors at an antiferromagnetic singular point for next-generation and high-frequency spin-based information technologies.

cond-mat.mtrl-sci↗

Energy-efficient superparamagnetic Ising machine and its application to traveling salesman problems

The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic spin states. However, it faces several challenges, including high power consumption due to artificial spins and randomness emulated by complex circuits, as well as low scalability caused by the rapidly growing connectivity when considering large-scale problems. Here, we present an experimental Ising annealing computer based on superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which successfully solves a 70-city travelling salesman problem (4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing a proper global annealing scheme, and using an efficient algorithm, our SMTJ-based Ising annealer shows superior performance in terms of power consumption and energy efficiency compared to other Ising schemes. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a crossbar array architecture for scalable integration using conventional magnetic random access memories. Our results demonstrate that the SMTJ-based Ising annealing computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes.

cs.ET↗

Provably-secure randomness generation from switching probability of magnetic tunnel junctions

In recent years, true random number generators (TRNGs) based on magnetic tunnelling junction (MTJ) have become increasingly attractive. This is because MTJ-based TRNGs offer some advantages over traditional CMOS-based TRNGs, such as smaller area and simpler structure. However, there has been no work thus far that quantified the quality of the raw output of an MTJ-based TRNG and performed suitable randomness extraction to produce provably-secure random bits, unlike their CMOS-based counterparts. In this work, we implement an MTJ-based TRNG and characterise the entropy of the raw output. Using this information, we perform post-processing to extract a set of random bits which are provably-secure.

quant-ph↗

Observation of the out-of-plane polarized spin current from CVD grown WTe2

Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, we utilize centimeter-scale chemical vapor deposition (CVD)-grown Td-WTe2 thin films and study the spin current generation by the spin torque ferromagnetic resonance technique. We find the in-plane and out-of-plane spin conductivities of 7.36 x 10^3 (h/2e) (ohm-m)^-1 and 1.76 x 10^3 (h/2e) (ohm-m)^-1, respectively, in CVD-growth 5 nm-WTe2. We further demonstrate the current-induced magnetization switching in WTe2/NiFe at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.

cond-mat.mtrl-sci↗

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

cond-mat.mes-hall↗

Impact of Fe$_{80}$B$_{20}$ insertion on the properties of dual-MgO perpendicular magnetic tunnel junctions

We explore the impact of Fe80B20 inserted at both Co$_{20}$Fe$_{80}$B$_{20}$/MgO interfaces of dual-MgO free layers (FLs) in bottom-pinned magnetic tunnel junctions (MTJs). MTJ stacks are annealed for 30 min at 350 $^\circ$C and 400 $^\circ$C in a vacuum after film deposition. Current-in-plane tunneling measurements are carried out to characterize magnetotransport properties of the MTJs. Conventional magnetometry measurements and ferromagnetic resonance are conducted to estimate the saturation magnetization, the effective perpendicular anisotropy field and the Gilbert damping of dual-MgO FLs as a function of the Fe$_{80}$B$_{20}$ thickness and annealing temperatures. With ultrathin Fe$_{80}$B$_{20}$ (0.2 - 0.4 nm) inserted, perpendicular magnetic anisotropy (PMA) of FLs increases with similar tunnel magneto-resistance (TMR) and low damping values. As Fe$_{80}$B$_{20}$ layer thickness further increases (0.6 - 1.2 nm), both TMR and PMA degrade, and damping increases dramatically. This study demonstrates a novel approach to tune properties of MTJ stacks with dual-MgO FLs up to 400 $^\circ$C annealing, which enables MTJ stacks for various applications.

physics.app-ph↗

Origin and Large Enhancement of Large Spin Hall Angle in Weyl Semimetals LaAl$X$ ($X$=Si, Ge)

We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAl$X$ ($X$=Si, Ge) via a first-principles approach with maximally localized Wannier functions. We show that the strong intrinsic SHE in LaAl$X$ originates from the multiple slight anticrossings of nodal lines and points near $E_F$ due to their high mirror symmetry and large spin-orbit interaction. It is further found that both electrical and thermal means can enhance the spin Hall conductivity ($σ_{SH}$). However, the former also increases the electrical conductivity ($σ_{c}$), while the latter decreases it. As a result, the independent tuning of $σ_{SH}$ and $σ_{c}$ by thermal means can enhance the spin Hall angle (proportional to $\frac{σ_{SH}}{σ_{c}}$), a figure of merit of charge-to-spin current interconversion of spin-orbit torque devices. The underlying physics of such independent changes of the spin Hall and electrical conductivity by thermal means is revealed through the band-resolved and $k$-resolved spin Berry curvature. Our finding offers a new way in the search of high SHA materials for room-temperature spin-orbitronics applications.

cond-mat.mes-hall↗

Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4

The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temperature-induced shift in the chemical potential indicating a direct correlation of NLHE with the electronic structure at the Fermi surface. Finally, the room-temperature NLHE in TaIrTe4 is exploited to demonstrate the wireless RF rectification with zero external bias and magnetic field. This work opens a door to realizing room temperature applications based on the NLHE in Weyl semimetals.

cond-mat.mtrl-sci↗

Quantum frequency doubling in the topological insulator Bi2Se3

The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.

cond-mat.mtrl-sci↗

Magnon versus electron mediated spin-transfer torque exerted by spin currents across antiferromagnetic insulator to switch magnetization of adjacent ferromagnetic metal

The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying nonequilibrium electronic spin density at one of its surfaces, so that their propagation across AFI deprived of conduction electrons eventually leads to reversal of magnetization of a ferromagnetic metal (FM) attached to the opposite surface of AFI. We employ a recently developed time-dependent nonequilibrium Green functions combined with the Landau-Lifshitz-Gilbert equation (TDNEGF+LLG) formalism to evolve conduction electrons quantum-mechanically while they interact via self-consistent back-action with localized magnetic moments described classically by atomistic spin dynamics solving a system of LLG equations. Upon injection of square current pulse as the initial condition, TDNEGF+LLG simulations of FM-polarizer/AFI/FM-analyzer junctions show that reversal of localized magnetic moments within FM-analyzer is less efficient, in the sense of requiring larger pulse height and its longer duration, than conventional electron-mediated STT (ESTT) driving magnetization switching in standard FM-polarizer/normal-metal/FM-analyzer spin valve. Since both electronic, generated by spin pumping from AFI, and magnonic, generated by direct transmission from AFI, spin currents are injected into the FM-analyzer, its localized magnetic moments will experience combined MSTT and ESTT. Nevertheless, by artificially turning off ESTT we demonstrate that MSTT plays a dominant role whose understanding, therefore, paves the way for all-magnon-driven magnetization switching devices with no electronic parts.

cond-mat.mes-hall↗

Emerging spintronics phenomena and applications

Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and low-power functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report.

cond-mat.mtrl-sci↗