arXiv subjects

Hyunsoo Yang

Publications and source records attributed to Hyunsoo Yang.

140 records · Page 8Linked to original sources

arXiv2012

Nonlocal spin transport in single walled carbon nanotube networks

Spin transport in carbon-based materials has stimulated much interest due to their ballistic conductance and a long phase coherence length. While much research has been conducted on individual carbon nanotubes, current growth and placement techniques are incompatible with large-scale fabrication. Here we report nonlocal spin injection and detection in single wall carbon nanotube networks. We observe spin transport over a distance of 1 um, and extract a spin diffusion length of 1.6 - 2.4 um with an injected spin polarization from CoFe into nanotube network of 18 - 41%. Our observations demonstrate that spin transport is possible in carbon nanotube networks due to the formation of natural tunnel barriers between nanotubes and metallic contacts.

cond-mat.mtrl-sci↗

arXiv2012

Attenuation characteristics of spin pumping signal due to travelling spin waves

The authors have investigated the contribution of the surface spin waves to spin pumping. A Pt/NiFe bilayer has been used for measuring spin waves and spin pumping signals simultaneously. The theoretical framework of spin pumping resulting from ferromagnetic resonance has been extended to incorporate spin pumping due to spin waves. Equations for the effective area of spin pumping due to spin waves have been derived. The amplitude of the spin pumping signal resulting from travelling waves is shown to decrease more rapidly with precession frequency than that resulting from standing waves and show good agreement with the experimental data.

cond-mat.mtrl-sci↗

arXiv2012

Interference-mediated intensity modulation of spin waves

The modulation of propagating spin-wave amplitude in Ni81Fe19 (Py) films, resulting from constructive and destructive interference of spin wave, has been demonstrated. Spin waves were excited and detected inductively using pulse inductive time domain measurements. Two electrical impulses were used for launching two interfering Gaussian spin wave packets in Py films. The applied bias magnetic field or the separation between two pulses was used for tuning the amplitude of the resulting spin wave packets. This may thus be useful for spin wave based low-power information transfer and processing.

cond-mat.mtrl-sci↗

arXiv2011

Metastable magnetic domain wall dynamics

The dynamics of metastable magnetic domain walls in straight ferromagnetic nanowires under spin waves, external magnetic fields, and current induced spin transfer torque are studied by micromagnetic simulations. It is found that in contrast to a stable wall, it is possible to displace a metastable domain wall in the absence of any external excitation. In addition, independent of the domain wall excitation method, the velocity of a metastable wall is much smaller than a stable wall and their displacement direction could be different from the stable wall depending on the structure of metastable walls. Under the current induced spin transfer torque excitation, the direction of domain wall displacement is directly related to the intensity of nonadiabatic spin transfer torque. In a rough nanowire, it is found that the displacement of a metastable wall could happen much below the critical excitation of a stable wall. Furthermore, we show that it is possible to have either a forward or backward displacement of a metastable domain wall by changing the pulse width of the excitation.

cond-mat.mtrl-sci↗

arXiv2011

Electrical measurement of antivortex wall eigenfrequency

The dynamics of a ferromagnetic antivortex wall has been experimentally studied in a magnetic nanostructure. Two different techniques have been used to independently measure the eigenfrequency of an antivortex wall such as the resonance excitation by sinusoidal microwave and the damped resonance excitation induced by short voltage pulses. Direct observation of antivortex wall nucleation has been measured in the frequency domain for the first time. Electrical measurements of the antivortex dynamics in frequency domain reveal the existence of multi-eigenmodes as well as nonlinear behaviors for large excitation amplitudes. The time resolved measurements of the antivortex wall show that the frequency of the damped gyration is similar to that of frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗

arXiv2011

The Kondo effect in magnetic impurities and ferromagnetic contacts

Planar macroscopic magnetic tunnel junctions exhibit well defined zero bias anomalies when a thin layer of ferromagnetic CoFe(B) nanodots is inserted within a MgO based tunnel barrier. The conductance curves exhibit a single and a double peak, respectively, for anti-parallel and parallel alignment of the magnetizations of the electrodes which sandwich the tunnel barrier. This leads to a suppression of the tunneling magnetoresistance near zero bias. We show that the double peak structure indicates that the zero-bias anomaly is spin-split due to a magnetic exchange interaction between the magnetic nanodots and the ferromagnetic electrodes. Using a model based on an Anderson quantum dot coupled to ferromagnetic leads, we show that these results imply the coexistence of a Kondo effect and ferromagnetism.

cond-mat.str-el↗

arXiv2011

Surface energy engineering of graphene

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° with graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single, bi, and multi layer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and correlation between the level of disorder and wettability is reported. By using low power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

cond-mat.mtrl-sci↗

arXiv2011

Spin wave assisted current induced magnetic domain wall motion

The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the speed of domain walls due to current induced spin transfer torque is comparable to the velocity driven by spin waves, the speed of domain wall is improved by applying spin waves. The domain wall velocity can be manipulated by the frequency and amplitude of spin waves. The effect of spin waves is suppressed in the high current density regime in which the domain wall is mostly driven by current induced spin transfer torque.

cond-mat.mtrl-sci↗

arXiv2011

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

cond-mat.mes-hall↗

arXiv2011

Ambipolar bistable switching effect of graphene

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the ON/OFF ratio of graphene resistive switching are suggested.

cond-mat.mes-hall↗

arXiv2011

Effect of nonadiabatic spin transfer torque on domain wall resonance frequency and mass

The dynamics of a magnetic domain wall in a semi circular nanowire loop is studied by an analytical model and micromagnetic simulations. We find a damped sinusoidal oscillation of the domain wall for small displacement angles around its equilibrium position under an external magnetic field in the absence of currents. By studying the effect of current induced nonadiabatic spin transfer torque on the magnetic domain wall resonance frequency and mass, a red shift is found in the resonance frequency and domain wall mass increases by increasing the ratio of nonadiabatic spin torque to adiabatic contribution above 1.

cond-mat.mtrl-sci↗

arXiv2011

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of -16% at 2.8 K. We attribute this to the formation of non-collinear spin structures in the NiO layer as observed by XMCD. The magnetic moments of the interface Ni atoms tilt from the easy axis due to exchange interaction and the tilting angle decreases with increasing the NiO thickness. The experimental observations are further support by non-collinear spin density functional theory.

cond-mat.mtrl-sci↗

arXiv2010

Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors

There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly long spin-lifetimes, nearly a million times longer than in their normal state. The lifetime is determined from the suppression of the aluminum's superconductivity resulting from the accumulation of spin polarized carriers in the aluminum layer using tunnel spin injectors. A Hanle effect, observed in the presence of small in-plane orthogonal fields, is shown to be quantitatively consistent with the presence of long-lived spin polarized quasi-particles. Our experiments show that the superconducting state can be significantly modified by small electric currents, much smaller than the critical current, which is potentially useful for devices involving superconducting qubits.

cond-mat.mes-hall↗

arXiv2007

Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb blockade regime, for layers less than ~1 nm thick, the conductance of the junction is increased at low bias consistent with Kondo assisted tunneling. In the same regime we observe a suppression of the TMR. For slightly thicker layers, and correspondingly larger nanodots, the TMR is enhanced at low bias, consistent with co-tunneling.

cond-mat.mtrl-sci↗