arXiv subjects

Hyunsoo Yang

Publications and source records attributed to Hyunsoo Yang.

At least 127 records · Page 7Linked to original sources

arXiv2013

Graphene/liquid crystal based terahertz phase shifters

Due to its high electrical conductivity and excellent transmittance at terahertz frequencies, graphene is a promising candidate as transparent electrodes for terahertz devices. We demonstrate a liquid crystal based terahertz phase shifter with the graphene films as transparent electrodes. The maximum phase shift is 10.8 degree and the saturation voltage is 5 V with a 50 um liquid crystal cell. The transmittance at terahertz frequencies and electrical conductivity depending on the number of graphene layer are also investigated. The proposed phase shifter provides a continuous tunability, fully electrical controllability, and low DC voltage operation.

cond-mat.mtrl-sci↗

arXiv2013

Stochastic Nonlinear Electrical Characteristics of Graphene

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

cond-mat.mes-hall↗

arXiv2013

Characterization of magnetostatic surface spin waves in magnetic thin films: evaluation for microelectronic applications

The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techniques. Through simulations it has been shown that the decay lengths of magnetostatic spin waves are affected most by the damping parameter, and least by the exchange stiffness constant. The damping and dispersion properties of spin waves limit the attenuation length to several tens of microns. Thus, we have ruled out the possibility of inter-chip communications via spin waves. Experimental techniques for the extraction of the dispersion relationship have also been demonstrated, along with experimental demonstrations of spin wave interference for amplitude modulation. The effectiveness of spin wave modulation through interference, along with the capability of determining the spin wave dispersion relationships electrically during manufacturing and testing phase of chip production may pave the way for using spin waves in analog computing wherein the circuitry required for performing similar functionality becomes prohibitive.

cond-mat.mtrl-sci↗

arXiv2013

Electric-field-induced magnetization changes in Co/Al2O3 granular multilayers

We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the applied electric field and (b) high-field regime when the magnetization decreases irreversibly. The former is attributed to the changes in the relative 3d-orbital occupation of the minority and majority bands in the Co granules. A theoretical model has been developed to explain the electric field induced changes in the band structure of the granular system and hence the magnetic moment. The latter result may be understood assuming the electric field induces oxygen migration from Al2O3 to the Co granules, since an increase in oxidation state of the Co granules is shown, through ab-initio calculations, to give rise to a reduced magnetization of the system.

cond-mat.mtrl-sci↗

arXiv2012

Tunneling behavior of bismuth telluride nanoplates in electrical transport

We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showing symmetric, the other showing a two-step tunneling behavior. The latter can be understood in terms of disorder.

cond-mat.mtrl-sci↗

arXiv2012

Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions

The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance values suggests higher Cl for low TMR junctions. Using Cole-Cole plots the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values.

cond-mat.mtrl-sci↗

arXiv2012

Universal scaling of resistivity in bilayer graphene

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.

cond-mat.mtrl-sci↗

arXiv2012

Shifting of surface plasmon resonance due to electromagnetic coupling between graphene and Au nanoparticles

Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied. The system demonstrates a blue shift of 29 nm as the thickness of the spacer layer increases from 0 to 15 nm. This is due to the electromagnetic coupling between the localized surface plasmons excited in the nanoparticles and the graphene film. The strength of the coupling decays exponentially with a decay length of d/R=0.36, where d is the spacer layer thickness and R is the diameter of the Au nanoparticles. The result agrees qualitatively well with the plasmon ruler equation. Interestingly, a further increment of the spacer layer thickness induces a red shift of 17 nm in the resonance wavelength and the shift saturates when the thickness of the spacer layer increases above 20 nm.

cond-mat.mtrl-sci↗

arXiv2012

Detection of domain wall eigenfrequency in infinity-shaped magnetic nanostructures

The dynamics of a magnetic infinity-shaped nanostructure has been experimentally studied by two different techniques such as the sinusoidal resonance excitation and the damped short pulse excitation to measure the eigenfrequency of domain walls. Direct observation of the magnetic domain wall nucleation has been measured in the frequency domain. Electrical measurements of the domain wall dynamics in the frequency domain reveal the existence of multi-eigenmodes for large excitation amplitudes. The time-resolved measurements show that the frequency of the damped gyration is similar to that of the frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗

arXiv2012

Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions

We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain.

cond-mat.mtrl-sci↗

arXiv2012

Observation of magnetocapacitance in ferromagnetic nanowires

The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching fields in the capacitance measurements match with that of the magnetoresistance measurements in the opposite sense. The origin of the magnetocapacitance has been attributed to magnetoresistance. This magnetocapacitance detection technique can be useful for magnetic domain wall studies.

cond-mat.mtrl-sci↗

arXiv2012

Frictional characteristics of exfoliated and epitaxial graphene

To determine the friction coefficient of graphene, micro-scale scratch tests are conducted on exfoliated and epitaxial graphene at ambient conditions. The experimental results show that the monolayer, bilayer, and trilayer graphene all yield friction coefficients of approximately 0.03. The friction coefficient of pristine graphene is less than that of disordered graphene, which is treated by oxygen plasma. Ramping force scratch tests are performed on graphene with various numbers of layers to determine the normal load required for the probe to penetrate graphene. A very low friction coefficient and also its high pressure resistance make graphene a promising material for antiwear coatings.

cond-mat.mtrl-sci↗

arXiv2012

Disorder-free sputtering method on graphene

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

cond-mat.mtrl-sci↗

arXiv2012

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic properties by adsorbing water vapor, which makes graphene a technologically promising material for sensor applications.

cond-mat.mtrl-sci↗

arXiv2012

The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene

Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 μs. However, the measured capacitance across the graphene channel does not show any hysteresis, but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and graphene interface.

cond-mat.mtrl-sci↗

arXiv2012

Spin waves interference from rising and falling edges of electrical pulses

The authors have investigated the effect of the electrical pulse width of input excitations on the generated spin waves in a NiFe strip using pulse inductive time domain measurements. The authors have shown that the spin waves resulting from the rising- and the falling-edges of input excitation pulses interfere either constructively or destructively, and have provided conditions for obtaining spin wave packets with maximum intensity at different bias conditions.

cond-mat.mtrl-sci↗

arXiv2012

Graphene induced tunability of the surface plasmon resonance

Tunability of the surface plasmon resonance wavelength is demonstrated by varying the thickness of Al2O3 spacer layer inserted between the graphene and nanoparticles. By varying the spacer layer thickness from 0.3 to 1.8 nm, the resonance wavelength is shifted from 583 to 566 nm. The shift is due to a change in the electromagnetic field coupling strength between the localized surface plasmons excited in the gold nanoparticles and a single layer graphene film. In contrast, when the graphene film is absent from the system, no noticeable shift in the resonance wavelength is observed upon varying the spacer thickness.

cond-mat.mtrl-sci↗

arXiv2012

Study of electromagnetic enhancement for surface enhanced Raman spectroscopy of SiC graphene

The electromagnetic enhancement for surface enhanced Raman spectroscopy (SERS) of graphene is studied by inserting a layer of Al2O3 between epitaxial graphene and Au nanoparticles. Different excitation lasers are utilized to study the relationship between laser wavelength and SERS. The theoretical calculation shows that the extinction spectrum of Au nanoparticles is modulated by the presence of graphene. The experimental results of the relationship between the excitation laser wavelength and the enhancement factor fit well with the calculated results. An exponential relationship is observed between the enhancement factor and the thickness of the spacer layer.

cond-mat.mtrl-sci↗