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arXiv · 1103.4665

Tunneling characteristics of graphene

Young Jun Shin·Gopinadhan Kalon·Jaesung Son·Jae Hyun Kwon·Jing Niu·Charanjit S. Bhatia·Gengchiau Liang·Hyunsoo Yang
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Abstract

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

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Young Jun Shin, Gopinadhan Kalon, Jaesung Son, Jae Hyun Kwon, Jing Niu, Charanjit S. Bhatia, Gengchiau Liang, Hyunsoo Yang. 2011-03-24. Tunneling characteristics of graphene. https://doi.org/10.1063/1.3527979

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