arXiv subjects

Igor Žutić

Publications and source records attributed to Igor Žutić.

At least 37 records · Page 2Linked to original sources

arXiv2023

Phenomenological Theory of the Supercurrent Diode Effect: The Lifshitz Invariant

Nonreciprocal phenomena in the normal state are well established and key to many commercial applications. In contrast, superconducting analogs, such as the superconducting diode effect (SDE), are only starting to be experimentally explored and pose significant challenges to their theoretical understanding. In this work we put forth a phenomenological picture of the SDE based on the generalized Ginzburg-Landau free energy, which includes a Lifshitz invariant as the hallmark of noncentrosymmetric helical phase of the finite-momentum Cooper pairs. We reveal that such a Lifshitz invariant drives the SDE in quasi-two-dimensional systems in an applied magnetic field and cannot be removed by a gauge transformation, due to the inherently inhomogeneous magnetic response. For a thin film, the SDE scales with the square of its thickness and nonlinearly with the strength of the in-plane magnetic field. We derive an explicit formula that relates the SDE at small magnetic fields to the strength of Rashba spin-orbit coupling, g-factor, and Fermi energy. For a noncentrosymmetric Josephson junction, we self-consistently obtain generalized anharmonic current-phase relation which support the SDE. The transparency of our approach, which agrees well with experimentally-measured SDE, offers an important method to study nonreciprocal phenomena, central to superconducting spintronics and topological superconductivity.

cond-mat.supr-con↗

arXiv2023

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of two-dimensional ferromagnets in semiconductor-based vdW junctions offers gate-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not just the magnitude, but also the TMR sign is tuned by the applied bias or the semiconductor thickness, enabling modulation of highly spin-polarized carriers in vdW semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Superconductor/Ferromagnet Heterostructures: A Platform for Superconducting Spintronics and Quantum Computation

The interplay between superconductivity and ferromagnetism in the superconductor/ferromagnet (SC/FM) heterostructures generates many interesting physical phenomena, including spin-triplet superconductivity, superconducting order parameter oscillation, and topological superconductivity. The unique physical properties make the SC/FM heterostructures as promising platforms for future superconducting spintronics and quantum computation applications. In this article, we review important research progress of SC/FM heterostructures from superconducting spintronics to quantum computation, and it is organized as follows. Firstly, we discuss the progress of spin current carriers in SC/FM heterostructures including Bogoliubov quasiparticles, superconducting vortex, and spin-triplet Cooper pairs which might be used for long-range spin transport. Then, we will describe the π Josephson junctions and its application for constructing π qubits. Finally, we will briefly review experimental signatures of Majorana states in the SC/FM heterostructures and the theoretically proposed manipulation, which could be useful to realize fault-tolerant topological quantum computing.

cond-mat.mes-hall↗

arXiv2022

Tunable planar Josephson junctions driven by time-dependent spin-orbit coupling

Integrating conventional superconductors with common III-V semiconductors provides a versatile platform to implement tunable Josephson junctions (JJs) and their applications. We propose that with gate-controlled time-dependent spin-orbit coupling, it is possible to strongly modify the current-phase relations and Josephson energy and provide a mechanism to drive the JJ dynamics, even in the absence of any bias current. We show that the transition between stable phases is realized with a simple linear change in the strength of the spin-orbit coupling, while the transition rate can exceed the gate-induced electric field GHz changes by an order of magnitude. The resulting interplay between the constant effective magnetic field and changing spin-orbit coupling has direct implications for superconducting spintronics, controlling Majorana bound states, and emerging qubits. We argue that topological superconductivity, sought for fault-tolerant quantum computing, offers simpler applications in superconducting electronics and spintronics.

cond-mat.supr-con↗

arXiv2021

Charge Density Wave Activated Excitons in TiSe$_2$-MoSe$_2$ Heterostructures

Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of temperature-dependent and spatially-resolved PL measurements reveal this peak is unique to the TiSe$_2$-MoSe$_2$ interface, higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe$_2$ charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations, but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves.

cond-mat.mes-hall↗

arXiv2021

Threshold behavior in spin lasers: Spontaneous emission and nonlinear gain

A hallmark of spin-lasers, injected with spin-polarized carriers, is their threshold behavior with the onset of stimulated emission. Unlike the single threshold in conventional lasers with unpolarized carriers, two thresholds are expected in spin lasers. With the progress in scaled-down lasers and the use of novel two-dimensional materials it is unclear if the common description of spin lasers assuming a negligible spontaneous emission and linear optical gain remains relevant or even how to identify the lasing thresholds. Our rate-equation description addresses these questions by considering a large spontaneous emission and a nonlinear optical gain. We provide a transparent approach and analytical results to explore the resulting threshold behavior, its deviation from the prior studies, as well as guide future spin-lasers as a versatile platform for spintronics beyond magnetoresistance.

cond-mat.mes-hall↗

arXiv2021

Phase signature of topological transition in Josephson Junctions

Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.

cond-mat.mes-hall↗

arXiv2020

Intensity equations for birefringent spin lasers

Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the operation of lasers. With the injection of spin-polarized carriers, which lead to the circularly polarized light, the polarization of the emitted light can be changed an order of magnitude faster than its intensity. This ultrafast operation of spin lasers relies on a large birefringence, usually viewed as detrimental in spin and conventional lasers. We introduce a transparent description of spin lasers using intensity equations, which elucidate the influence of birefringence on the intensity and polarization modulation of lasers. While intensity modulation is independent of birefringence, for polarization modulation an increase in birefringence directly increases the resonant frequency. Our results for dynamical operation of lasers provide a guide for their spin-dependent response and spintronic applications beyond magnetoresistance.

cond-mat.mes-hall↗

arXiv2020

Proximity-induced magnetization in graphene: Towards efficient spin gating

Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene. We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the \Co/\Pt/\Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.

cond-mat.mes-hall↗

arXiv2020

Optically Probing Tunable Band Topology in Atomic Monolayers

In many atomically thin materials their optical absorption is dominated by excitonic transitions. It was recently found that optical selection rules in these materials are influenced by the band topology near the valleys. We propose that gate-controlled band ordering in a single atomic monolayer, through changes in the valley winding number and excitonic transitions, can be probed in helicity-resolved absorption and photoluminescence. This predicted tunable band topology is confirmed by combining an effective Hamiltonian and a Bethe-Salpeter equation for an accurate description of excitons, with first-principles calculations suggesting its realization in Sb-based monolayers.

cond-mat.mes-hall↗

arXiv2020

Spin-Lasers: Spintronics Beyond Magnetoresistance

Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

cond-mat.mes-hall↗

arXiv2020

Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$

The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2019

Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics

Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader implications of SOC that is also central to the design of topological states, including topological insulators, skyrmions, and Majorana fermions, or to overcome the exclusion of two-dimensional ferro-magnetism expected from the Mermin-Wagner theorem. SOC and the resulting emergent interfacial spin-orbit fields are simply realized in junctions through structural inversion asymmetry, while the anisotropy in magnetoresistance (MR) allows for their experimental detection. Surprisingly, we demonstrate that an all-epitaxial ferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes a remarkable transformation below the superconducting transition temperature of the metal. The superconducting junction has a three orders of magnitude higher MR anisotropy and supports the formation of spin-triplet superconductivity, crucial for superconducting spintronics, and topologically-protected quantum computing. Our findings call for revisiting the role of SOC in other systems which, even when it seems negligible in the normal state, could have a profound influence on the superconducting response.

cond-mat.supr-con↗

arXiv2019

Enhanced spin-triplet pairing in magnetic junctions with s-wave superconductors

A common path to superconducting spintronics, Majorana fermions, and topologically-protected quantum computing relies on spin-triplet superconductivity. While naturally occurring spin-triplet pairing is elusive and even common spin-triplet candidates, such as Sr$_2$RuO$_4$, support alternative explanations, proximity effects in heterostructures can overcome these limitations. It is expected that robust spin-triplet superconductivity in magnetic junctions should rely on highly spin-polarized magnets or complex magnetic multilayers. Instead, we predict that the interplay of interfacial spin-orbit coupling and the barrier strength in simple magnetic junctions, with only a small spin polarization and s-wave superconductors, can lead to nearly complete spin-triplet superconducting proximity effects. This peculiar behavior arises from an effective perfect transparency: interfacial spin-orbit coupling counteracts the native potential barrier for states of a given spin and wave vector. We show that the enhanced spin-triplet regime is characterized by a huge increase in conductance magnetoanisotropy, orders of magnitude larger than in the normal state.

cond-mat.supr-con↗

arXiv2019

Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum

Monolayer transition-metal dichalcogenides (ML-TMDs) offer exciting opportunities to test the manifestations of many-body interactions through changes in the charge density. Tuning the charge density by a gate voltage leads to profound changes in the optical spectra of excitons in ML-TMDs. We review the band-gap renormalization and dynamical screening as a function of charge density, and then incorporate these effects through various approximations that model long-wavelength charge excitations in the Bethe-Salpeter Equation (BSE). We then show that coupling between excitons and shortwave charge excitations is essential to resolve several experimental puzzles. Unlike ubiquitous and well-studied plasmons, driven by collective oscillations of the background charge density in the long-wavelength limit, we discuss the emergence of shortwave plasmons that originate from the short-range Coulomb interaction through which electrons transition between the $\mathbf{K}$ and $-\mathbf{K}$ valleys. We study the coupling between the shortwave plasmons and the neutral exciton through the self-energy of the latter. We then elucidate how this coupling as well as the spin ordering in the conduction band give rise to an experimentally observed optical sideband in electron-doped W-based MLs, conspicuously absent in electron-doped Mo-based MLs or any hole-doped ML-TMDs. While the focus of this review is on the optical manifestations of many-body effects in ML-TMDs, a systematic description of the dynamical screening and its various approximations allow one to revisit other phenomena, such as nonequilibrium transport or superconducting pairing, where the use of the BSE or the emergence of shortwave plasmons can play an important role.

cond-mat.mtrl-sci↗

arXiv2019

Intervalley plasmons in crystals

Collective charge excitations in solids have been the subject of intense research ever since the pioneering works of Bohm and Pines in the 1950s. Most of these studies focused on long-wavelength plasmons that involve charge excitations with a small crystal-momentum transfer, $q \ll G$, where $G$ is the wavenumber of a reciprocal lattice vector. Less emphasis was given to collective charge excitations that lead to shortwave plasmons in multivalley electronic systems (i.e., when $q \sim G$). We present a theory of intervalley plasmons, taking into account local-field effects in the dynamical dielectric function. Focusing on monolayer transition-metal dichalcogenides where each of the valleys is further spin-split, we derive the energy dispersion of these plasmons and their interaction with external charges. Emphasis in this work is given to sum rules from which we derive the interaction between intervalley plasmons and a test charge, as well as a compact single-plasmon pole expression for the dynamical Coulomb potential.

cond-mat.mtrl-sci↗

arXiv2018

Ultrafast spin-lasers

The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena. Introducing novel concepts in lasers thus has a potential for both applied and fundamental implications. Here we experimentally demonstrate that the coupling between carrier spin and light polarization in common semiconductor lasers can enable room-temperature modulation frequencies above 200 GHz, exceeding by nearly an order of magnitude the best conventional semiconductor lasers. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both commonly viewed as detrimental in spintronics and conventional lasers. Our results overcome the key speed limitations of conventional directly modulated lasers and offer a prospect for the next generation of low-energy ultrafast optical communication.

cond-mat.mes-hall↗

arXiv2018

Probing Tunneling Spin Injection into Graphene via Bias Dependence

The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative DC bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations.

cond-mat.mes-hall↗