arXiv subjects

J. Akimitsu

Publications and source records attributed to J. Akimitsu.

At least 37 records · Page 2Linked to original sources

arXiv2010

Pressure-induced high-Tc superconducting phase in FeSe: correlation between anion height and Tc

In this study, we performed high-pressure electrical resistivity measurements of polycrystalline FeSe in the pressure range of 1-16.0 GPa at temperatures of 4-300 K. A precise evaluation of Tc from zero-resistivity temperatures revealed that Tc shows a slightly distorted dome-shaped curve, with maximum Tc (30 K) at 6 GPa, which is lower than a previously reported Tc value (~37 K). With the application of pressure, the temperature dependence of resistivity above Tc changes dramatically to a linear dependence; a non-Fermi-liquid-like "high-Tc" phase appears above 3 GPa. We found a striking correlation between Tc and the Se height: the lower the Se height, the more enhanced is Tc. Moreover, this relation is broadly applicable to other iron pnictides, strongly indicating that high-temperature superconductivity can appear only around the optimum anion height (~1.38A). On the basis of these results, we suggest that the anion height should be considered as a key determining factor of Tc of iron-based superconductors containing various anions.

cond-mat.str-el↗

arXiv2009

AC susceptibility study of superconducting aluminium-doped silicon carbide

In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon carbide was successfully found to superconduct by means of resistivity and DC magnetization measurements. In contrast to boron-doped silicon carbide, the aluminum doped system is treated as a type-II superconductor because of the absence of an hysteresis in data measured upon decreasing and increasing temperature in finite magnetic fields. In this paper, results of a recent AC susceptibility study on aluminum-doped silicon carbide are presented. In higher applied DC magnetic fields and at low temperatures, a weak indication of supercooling with a width of a few mK is found. This supports the conclusion that aluminum-doped silicon carbide is located near to the border between type-I and type-II superconductivity, as pointed out in a recent theoretical work, too.

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arXiv2009

Specific heat of aluminium-doped superconducting silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

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arXiv2008

Conventional $s$-Wave Superconductivity in Noncentrosymmetric Ir$_2$Ga$_9$: $^{71}$Ga-NQR Evidence

We report a $^{71}$Ga nuclear-quadrupole-resonance (NQR) study on the characteristics of superconductivity in noncentrosymmetric Ir$_2$Ga$_9$ at zero field (H=0). The $^{71}$Ga-NQR measurements have revealed that $1/T_1$ has the clear coherence peak just below $T_{\rm c}$, and decreases exponentially upon further cooling in Ir$_2$Ga$_9$. From these results, Ir$_2$Ga$_9$ is concluded to be the conventional s-wave superconductor. Despite the lack of spatial centrosymmetry, there are no evidence for unconventional superconducting state ascribed to ASOC in Ir$_2$Ga$_9$.

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arXiv2008

Full Gap Superconductivity in Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ Probed by Muon Spin Rotation

Superfluid density ($n_s$) in the mixed state of an iron pnictide superconductor Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ is determined by muon spin rotation for a sample with optimal doping ($x=0.4$). The temperature dependence of $n_s$ is perfectly reproduced by the conventional BCS model for s-wave paring, where the order parameter can be either a single-gap with $Δ=8.35(6)$ meV [$2Δ/k_BT_c=5.09(4)$], or double-gap structure with $Δ_1=12$ meV (fixed) [$2Δ_1/k_BT_c=7.3$] and $Δ_2=6.8(3)$ meV [$2Δ_2/k_BT_c=4.1(2)$]. The latter is consistent with the recent result of angle-resolved photo-emssion spectroscopy. The large gap parameters ($2Δ/k_BT_c$) indicate extremely strong coupling of carriers to bosons that mediate the Cooper pairing.

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arXiv2008

Influence of doping on the Hall coefficient in Sr_{14-x}Ca_xCu_24O_41

We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical semiconducting behavior for x < 11.5. However, for x=11.5, the results are completely different, and the Hall coefficient and resistivity behavior is qualitatively similar to that of high temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is responsible for a pronounced change in resistivity with Ca doping.

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arXiv2008

Superconductivity in heavily boron-doped silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.

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arXiv2008

Crossover from one-dimensional copper-oxygen chains to two-dimensional ladders charge transport in (La,Y)y(Sr,Ca)14-yCu24O41

The charge transport in the copper-oxygen chain/ladder layers of (La,Y)y(Sr,Ca)14-yCu24O41 is investigated along two crystallographic directions in the temperature range from 50 K to 700 K and for doping levels from y ~= 6 (number of holes nh < 1) to y = 0 (number of holes nh = 6). A crossover from a one-dimensional hopping transport along the chains for y >= 3 to a quasi-two-dimensional charge conduction in the ladder planes for y <~ 2 is observed. This is attributed to a partial hole transfer from chains to ladders when the hole doping exceeds nh ~= 4 and approaches fully doped value n_h = 6. For y <~ 2 a weak dielectric relaxation at radio-frequencies and a microwave mode are detected, which might be recognized as signatures of a charge-density wave phase developed at short length scales in the ladders planes.

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arXiv2008

Magnetic response of noncentrosymmetric superconductor La2C3: Effect of double-gap and spin-orbit interaction

The presence of spin-orbit (SO) interaction in a noncentrosymmetric superconductor, La2C3 (T_c~11 K) is demonstrated by muon spin rotation (muSR) in its normal state, where muSR spectra exhibit field-induced weak depolarization due to van Vleck-like local susceptibility. In the mixed state, muon spin relaxation due to inhomogeneity of internal field (sigma_v) exhibits a field dependence that is characterized by a kink, where sigma_v (and hence the superfluid density) is more strongly reduced at lower fields. This is perfectly in line with the presence of a secondary energy gap previously inferred from the temperature dependence of sigma_v, and also consistent with the possible influence of asymmetric deformation of the Fermi surface due to the SO interaction.

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arXiv2008

Superconductivity of hexagonal heavily-boron doped silicon carbide

In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:B) and recently in the stochiometric ''mixture'' of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I superconductivity in contrast to the type-II superconductors C:B and Si:B. Here we will focus on the specific heat of two different superconducting samples of boron-doped SiC. One of them contains cubic and hexagonal SiC whereas the other consists mainly of hexagonal SiC without any detectable cubic phase fraction. The electronic specific heat in the superconducting state of both samples SiC:B can be described by either assuming a BCS-type exponentional temperature dependence or a power-law behavior.

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arXiv2008

Muon spin relaxation study of LaTiO3 and YTiO3

We report muon spin relaxation measurements on two Ti3+ containing perovskites, LaTiO3 and YTiO3, which display long range magnetic order at low temperature. For both materials, oscillations in the time-dependence of the muon polarization are observed which are consistent with three-dimensional magnetic order. From our data we identify two magnetically inequivalent muon stopping sites. The muon spin relaxation results are compared with the magnetic structures of these compounds previously derived from neutron diffraction and muon spin relaxation studies on structurally similar compounds.

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arXiv2008

Soft-phonon-driven superconductivity in CaAlSi as seen by inelastic x-ray scattering

Inelastic x-ray scattering and $ab$-$initio$ calculation are applied to investigate the lattice dynamics and electron-phonon coupling of the ternary silicide superconductor CaAlSi ($P/bar{6}m2$). A soft c-axis polarized mode is clearly observed along the $/Gamma$-$A$-$L$ symmetry directions. The soft mode is strongly anharmonically broadened at room temperature, but, at 10 K, its linewidth narrows and becomes in good agreement with calculations of linear electron-phonon coupling. This establishes a coherent description of the detailed phonon properties in this system and links them clearly and consistently with the superconductivity.

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arXiv2008

Specific heat and electronic states of superconducting boron-doped silicon carbide

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related ''mixed'' system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to non-superconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two ''parent'' materials C:B and Si:B.

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arXiv2008

Multigap superconductivity in sesquicarbides La$_2$C$_3$ and Y$_2$C$_3$

A complex structure of the superconducting order parameter in $Ln_2$C$_3$ ($Ln$ = La, Y) is demonstrated by muon spin relaxation ($μ$SR) measurements in their mixed state. The muon depolarization rate [$σ_{\rm v}(T)$] exhibits a characteristic temperature dependence that can be perfectly described by a phenomenological double-gap model for nodeless superconductivity. While the magnitude of two gaps is similar between La$_2$C$_3$ and Y$_2$C$_3$, a significant difference in the interband coupling between those two cases is clearly observed in the behavior of $σ_{\rm v}(T)$.

cond-mat.supr-con↗

arXiv2007

Pressure effects on the superconducting transition in nH-CaAlSi

We present a combined experimental and theoretical study of the effects of pressure on T_c of the hexagonal layered superconductors nH-CaAlSi (n = 1, 5, 6), where nH labels the different stacking variants that were recently discovered. Experimentally, the pressure dependence of T_c has been investigated by measuring the magnetic susceptibility of single crystals up to 10 kbar. In contrast to previous results on polycrystalline samples, single crystals with different stacking sequences display different pressure dependences of T_c. 1H-CaAlSi shows a decrease of T_c with pressure, whereas 5H and 6H-CaAlSi exhibit an increase of T_c with pressure. Ab-initio calculations for 1H, 5H and 6H -CaAlSi reveal that an ultrasoft phonon branch associated to out-of-plane vibrations of the Al-Si layers softens with pressure, leading to a structural instability at high pressures. For 1H-CaAlSi the softening is not sufficient to cause an increase of T_c, which is consistent with the present experiments, but adverse to previous reports. For 5H and 6H the softening provides the mechanism to understand the observed increase of T_c with pressure. Calculations for hypothetical 2H and 3H stacking variants reveal qualitative and quantitative differences.

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arXiv2007

Electronic Structures of CaAlSi with Different Stacking AlSi Layers by First-Principles Calculations

The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60 degrees rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.

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arXiv2007

Momentum-resolved charge excitations in high-Tc cuprates studied by resonant inelastic x-ray scattering

We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [pi,pi] direction than the [pi,0] direction. On the other hand, the resonance condition displays material dependence. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer.

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arXiv2007

Spin and charge orders and their hole-doping dependence in single layered cobaltate La2-xCaxCoO4(0.3<x<0.8)

Neutron scattering experiments were performed on single crystals of layered cobalt-oxides La2-xCaxCoO4 (LCCO) to characterize the charge and spin orders in a wide hole-doping range of 0.3<x<0.8. For a commensurate value of x=0.5 in (H,0,L) plane, two types of superlattice reflections concomitantly appear at low temperature; one corresponds to a checkerboard charge ordered pattern of Co2+/Co3+ ions and the other is magnetic in origin. Further, the latter magnetic-superlattice peaks show two types of symmetry in the reflections, suggesting antiferromagnetic-stacking (AF-S) and ferromagnetic-stacking (F-S) patterns of spins along the c direction. From the hole-doping dependence, the in-plane correlation lengths of both charge and spin orders are found to give a maximum at x=0.5. These features are the same with those of x=0.5 in La1-xSr1+xMnO4 (LSMO), a typical checkerboard and spin ordered compound. However, in (H,H,L) plane, we found a magnetic scattering peak at Q=(1/4,1/4,1/2) position below TN. This magnetic peak can not be understood by considering the Co2+ spin configuration, suggesting that this peak is originated from Co3+ spin order. By analyzing these superlattice reflections, we found that they are originated from high-spin state of Co3+ spin order.

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