arXiv subjects

J. Bass

Publications and source records attributed to J. Bass.

At least 19 recordsLinked to original sources

arXiv2024

Demonstration of weighted graph optimization on a Rydberg atom array using local light-shifts

Neutral atom arrays have emerged as a versatile platform towards scalable quantum computation and optimization. In this paper we present demonstrations of solving maximum weighted independent set problems on a Rydberg atom array using annealing with local light-shifts. We verify the ability to prepare weighted graphs in 1D and 2D arrays, including embedding a five vertex non-unit disk graph using nine physical qubits and demonstration of a simple crossing gadget. We find common annealing ramps leading to preparation of the target ground state robustly over a substantial range of different graph weightings. This work provides a route to exploring large-scale optimization of non-planar weighted graphs relevant for solving relevant real-world problems.

quant-ph↗

arXiv2023

Randomized Benchmarking using Non-Destructive Readout in a 2D Atom Array

Neutral atoms are a promising platform for scalable quantum computing, however prior demonstration of high fidelity gates or low-loss readout methods have employed restricted numbers of qubits. Using randomized benchmarking of microwave-driven single-qubit gates, we demonstrate average gate errors of $7(2)\times10^{-5}$ on a 225 site atom array using conventional, destructive readout. We further demonstrate a factor of 1.7 suppression of the primary measurement errors via low-loss, non-destructive and state-selective readout on 49 sites whilst achieving gate errors of $2(9)\times10^{-4}$.

quant-ph↗

arXiv2021

Superconductivity above 200 K Observed in Superhydrides of Calcium

Searching for superconductivity with Tc near room temperature is of great interest both for fundamental science & many potential applications. Here we report the experimental discovery of superconductivity with maximum critical temperature (Tc) above 210 K in calcium superhydrides, the new alkali earth hydrides experimentally showing superconductivity above 200 K in addition to sulfur hydride & rare-earth hydride system. The materials are synthesized at the synergetic conditions of 160~190 GPa and ~2000 K using diamond anvil cell combined with in-situ laser heating technique. The superconductivity was studied through in-situ high pressure electric conductance measurements in an applied magnetic field for the sample quenched from high temperature while maintained at high pressures. The upper critical field Hc(0) was estimated to be ~268 T while the GL coherent length is ~11 angstrom. The in-situ synchrotron X-ray diffraction measurements suggest that the synthesized calcium hydrides are primarily composed of CaH6 while there may also exist other calcium hydrides with different hydrogen contents.

cond-mat.supr-con↗

arXiv2010

Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces

Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flipping parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations.

cond-mat.mtrl-sci↗

arXiv2010

A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves

To study spin flipping within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel (AP) and parallel (P) magnetic states of the two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greater than 5 nm, but rather became constant to within our measuring uncertainty. This constant looks to be due mostly to a new, small MR in thin Py layers. The constant complicates isolating the spin-diffusion length, lsf(IrMn), in bulk IrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similar results were found with FeMn.

cond-mat.mtrl-sci↗

arXiv2010

Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces

From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta).

cond-mat.mtrl-sci↗

arXiv2009

A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu

We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer of a symmetric Py-based, double exchange-biased spin-valve. To focus on delta(F/N), the F- and N-layers are made thin compared to their spin-diffusion lengths. We test the technique using F/N = Co/Cu. Analysing with no adjustable parameters, gives inconsistency with delta(Co/Cu) = 0, but consistency with our prior value of delta(Co/Cu) = 0.25 (+/- 0.1). Taking delta(Co/Cu) as adjustable gives delta(Co/Cu) = 0.33 (+0.03/-0.08).

cond-mat.mtrl-sci↗

arXiv2009

Perpendicular-current Studies of Electron Transport Across Metal/Metal Interfaces

We review what we have learned about the scattering of electrons by the interfaces between two different metals (M1/M2) in the current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic quantity is the specific resistance, AR, the product of the area through which the CPP current flows times the CPP resistance. We describe results for both non-magnetic/non-magnetic (N1/N2) and ferromagnetic/non-magnetic (F/N) pairs. We focus especially upon cases where M1/M2 are lattice matched (i.e., have the same crystal structure and the same lattice parameters to within ~ 1%), because in these cases no-free-parameter calculations of 2AR agree surprisingly well with measured values. But we also list and briefly discuss cases where M1/M2 are not lattice matched, either having different crystal structures, or lattice parameters that differ by several percent. The published calculations of 2AR in these latter cases do not agree so well with measured values.

cond-mat.mtrl-sci↗

arXiv2009

Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing

We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or equal to 4 ML thick. From our calculations, a predicted anisotropy ratio, 2AR(Ag/Al)(001)/2AR(Ag/Al)(111), of more then 4 for a perfect interface, should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy.

cond-mat.mtrl-sci↗

arXiv2008

Specific Resistance of Pd/Ir Interfaces

From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations, including only spd orbitals, give for perfect interfaces, 2AR(Pd/Ir)(Perf) = 1.21 +/-0.1 fOhmm^2, and for interfaces composed of two monolayers of a random 50%-50% alloy, 2AR(Pd/Ir)(50/50) = 1.22 +/- 0.1 fOhmm^2. Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2AR(Pd/Ir)(Perf) = 1.10 +/- 0.1 fOhmm^2 and 2AR(Pd/Ir)(50-50) = 1.13 +/- 0.1 fOhmm^2, values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs

cond-mat.mtrl-sci↗

arXiv2008

Point-contact search for antiferromagnetic giant magnetoresistance

We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferromagnetic layers separated by a non-magnetic layer. We report on MR measurements for current injected from point contacts into sandwiches containing different combinations of layers of F = CoFe and AFM = FeMn. In addition to: AFM/N/AFM, F/AFM/N/AFM, and F/AFM/N/AFM/F structures, initial results led us to examine also AFM/F/N/AFM, F/AFM, and single F- and AFM-layer structures. At low currents, no MR was observed in any samples, and no MR was observed at any current densities in samples containing only AFMs. Together, these results indicate that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR - largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers.

cond-mat.mtrl-sci↗

arXiv2008

Spin-Diffusion Lengths in Dilute Cu(Ge) and Ag(Sn) Alloys

We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The good agreement of this lsf(Cu2%Ge) with the value lsf(Cu2%Ge) = 121 +/- 10 nm derived from an independent spin-orbit cross-section measurement for Ge in Cu, quantitatively validates the use of Valet-Fert theory for CPP-MR data analysis to layer thicknesses several times larger than had been done before. From the value of lsf(Ag4%Sn), we predict the ESR spin-orbit cross-section for Sn impurities in Ag.

cond-mat.mtrl-sci↗

arXiv2008

Studies of Effects of Current on Exchange-Bias: A Brief Review

MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM interfaces. In this paper, we first briefly review the main predictions by MacDonald and co-workers, and then the results of experiments on exchange bias that these predictions stimulated.

cond-mat.mtrl-sci↗

arXiv2007

Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching

We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.

cond-mat.mtrl-sci↗

arXiv2006

Spin transfer in an antiferromagnet

An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferromagnets, but can also occur in antiferromagnetic materials and even be stronger under some conditions. In this paper we demonstrate transfer of spin angular momentum across an interface between ferromagnetic and antiferromagnetic metals. The spin transfer is mediated by an electrical current of high density (~10^12 A/m^2) and revealed by variation in the exchange bias at the ferromagnet/antiferromagnet interface. We find that, depending on the polarity of the electrical current flowing across the interface, the strength of the exchange bias can either increase or decrease. This finding is explained by the theoretical prediction that a spin polarized current generates a torque on magnetic moments in the antiferromagnet. Current-mediated variation of exchange bias can be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications.

cond-mat.mtrl-sci↗

arXiv2005

Comparison of Measured and Calculated Specific Resistances of Pd/Pt Interfaces

We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06) fohm-m(2), which overlaps with no-free-parameter calculations: 2AR(predicted) of 0.30 (0.04) fohm-m(2) for flat, perfect interfaces, or 0.33 (0.04) fohm-m(2) for interfaces composed of 2 monolayers of a 50percent-50percent PdPt alloy. These results support three prior examples of agreement between calculations and measurements for pairs of metals having the same crystal structure and the same lattice parameter to within 1 percent. We also estimate the spin-flipping probability at Pd/Pt interfaces as 0.13 (0.08).

cond-mat.mtrl-sci↗

arXiv2004

Manipulating Current-Induced Magnetization Switching

We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are explained in terms of current-dependent effective magnetic temperature.

cond-mat.mtrl-sci↗

arXiv2004

Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au

We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu.

cond-mat.mtrl-sci↗