arXiv · 0906.0934
Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing
Abstract
We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or equal to 4 ML thick. From our calculations, a predicted anisotropy ratio, 2AR(Ag/Al)(001)/2AR(Ag/Al)(111), of more then 4 for a perfect interface, should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy.
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A. Sharma, N. Theodoropoulou, Shuai Wang, Ke Xia, W. P. Pratt Jr., J. Bass. 2009-06-04. Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing. https://doi.org/10.1063/1.3155856
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