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J. Hoffman

Publications and source records attributed to J. Hoffman.

22 records · Page 2Linked to original sources

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films.

cond-mat.mtrl-sci↗

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.

cond-mat.mtrl-sci↗

The High Voltage Feedthroughs for the ATLAS Liquid Argon Calorimeters

The purpose, design specifications, construction techniques, and testing methods are described for the high voltage feedthrough ports and filters of the ATLAS Liquid Argon calorimeters. These feedthroughs carry about 5000 high voltage wires from a room-temperature environment (300 K) through the cryostat walls to the calorimeters cells (89 K) while maintaining the electrical and cryogenic integrity of the system. The feedthrough wiring and filters operate at a maximum high voltage of 2.5 kV without danger of degradation by corona discharges or radiation at the Large Hadron Collider.

physics.ins-det↗

Planar Hall Effect MRAM

We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.

cond-mat.mtrl-sci↗