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J. Mannhart

Publications and source records attributed to J. Mannhart.

At least 37 records · Page 2Linked to original sources
arXiv2011

Interface-induced d-wave pairing

We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitations in the d-wave channel. Perspectives to enhance the superconducting transition temperature are discussed.

cond-mat.supr-con↗
arXiv2011

Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO$_3$/SrTiO$_3$ Interfaces

A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state.

cond-mat.mtrl-sci↗
arXiv2010

Evolution of the interfacial structure of LaAlO3 on SrTiO3

The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO3, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. The findings are qualitatively reproduced by density-functional theory calculations. Significant cationic intermixing across the interface extends approximately three monolayers for all film thicknesses. The interfaces of films thinner than four monolayers therefore extend to the surface, which might affect conductivity.

cond-mat.mtrl-sci↗
arXiv2010

Metal-Insulator Transition of the LaAlO3-SrTiO3 Interface Electron System

We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a given thickness of the LaAlO3 layer, the conductivity follows a sigma_0 ~(n - n_c)/n_c characteristic. The metal-insulator transition is found to be distinct from that of the semiconductor 2D systems.

cond-mat.mtrl-sci↗
arXiv2010

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.

cond-mat.mes-hall↗
arXiv2010

Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces

Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by the density of states the interface electron system differs qualitatively, first, from the electron systems of the materials defining the interface and, second, from the two-dimensional electron gases formed at interfaces between conventional semiconductors.

cond-mat.mtrl-sci↗
arXiv2009

What limits supercurrents in high temperature superconductors? A microscopic model of cuprate grain boundaries

The interface properties of high-temperature cuprate superconductors have been of interest for many years, and play an essential role in Josephson junctions, superconducting cables, and microwave electronics. In particular, the maximum critical current achievable in high-Tc wires and tapes is well known to be limited by the presence of grain boundaries, regions of mismatch between crystallites with misoriented crystalline axes. In studies of single, artificially fabricated grain boundaries the striking observation has been made that the critical current Jc of a grain boundary junction depends exponentially on the misorientation angle. Until now microscopic understanding of this apparently universal behavior has been lacking. We present here the results of a microscopic evaluation based on a construction of fully 3D YBCO grain boundaries by molecular dynamics. With these structures, we calculate an effective tight-binding Hamiltonian for the d-wave superconductor with a grain boundary. The critical current is then shown to follow an exponential suppression with grain boundary angle. We identify the buildup of charge inhomogeneities as the dominant mechanism for the suppression of the supercurrent.

cond-mat.supr-con↗
arXiv2009

Dynamical response and confinement of the electrons at the LaAlO3/SrTiO3 interface

With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also determined the vertical density profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm.

cond-mat.mtrl-sci↗
arXiv2009

Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation

The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer.

cond-mat.mtrl-sci↗
arXiv2009

Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy

The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruction in the LaAlO$_3$ overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

cond-mat.str-el↗
arXiv2008

Orbital reconstruction and two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.

cond-mat.mtrl-sci↗
arXiv2008

Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State

Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits

cond-mat.supr-con↗
arXiv2007

h/e-Periodicity in Superconducting Loops

The magnetic flux periodicity of superconducting loops as well as flux quantization itself are a manifestation of macroscopic quantum phenomena with far reaching implications. They provide the key to the understanding of many fundamental properties of superconductors and are the basis for most bulk and device applications of these materials. In superconducting rings the electrical current has been known to periodically respond to a magnetic flux with a periodicity of $\bm{h/2e}$. Here, the ratio of Planck's constant and the elementary charge defines the magnetic flux quantum $\bm{h/e}$. The well-known $\bm{h/2e}$ periodicity is viewed to be a hallmark for electronic pairing in superconductors and is considered evidence for the existence of Cooper pairs. Here we show that in contrast to this long-term belief, rings of many superconductor bear an $\bm{h/e}$ periodicity. These superconductors include the high-$\bm{T_c}$ cuprates, Sr$_2$RuO$_4$, the heavy-fermion superconductors, as well as all other unconventional superconductors with nodes in the energy gap functions, and s-wave superconductors with small gaps or states in the gap. As we show, the 50-year-old Bardeen--Cooper--Schrieffer theory of superconductivity implies that for multiply connected paths of such superconductors the ground-state energies and consequently also the supercurrents are generically $\bm{h/e}$ periodic. The origin of this periodicity is a magnetic-field driven reconstruction of the condensate and a concomitant Doppler-shifted energy spectrum. The robust, flux induced reconstruction of the condensate will be an important aspect to understand the magnetic properties of mesoscopic unconventional superconductors.

cond-mat.supr-con↗
arXiv2007

How Large is the Intrinsic Flux Noise of a Magnetic Flux Quantum, of Half a Flux Quantum and of a Vortex-Free Superconductor?

This article addresses the question whether the magnetic flux of stationary vortices or of half flux quanta generated by frustrated superconducting rings is noisy. It is found that the flux noise generated intrinsically by a superconductor is, in good approximation, not enhanced by stationary vortices. Half flux quanta generated by $π$-rings are characterized by considerably larger noise.

cond-mat.supr-con↗
arXiv2007

Interface-mediated pairing in field effect devices

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.

cond-mat.str-el↗
arXiv2006

Searching atomic spin contrast on nickel oxide (001) by force microscopy

The (001) surface of NiO, an antiferromagnet at room temperature, was investigated under ultra-high vacuum conditions with frequency modulation atomic force microscopy (FM-AFM). The antiferromagnetic coupling between ions leads to a spin superstructure on (001) surfaces. Exchange interaction between the probe of a force microscope and the NiO (001) surface should allow to image spin superstructures in real space. The surface was imaged with three different probing tips: nonmagnetic W tips, ferromagnetic Co tips and antiferromagnetic NiO tips - and atomic resolution was achieved with all three of them in various distance regimes and in several channels. Evidence for spin contrast was obtained in experiments that utilize NiO tips and oscillation amplitudes in the Å-regime, where optimal signal-to-noise ratio is expected. The spin contrast is weaker than expected and only visible in Fourier space images.

cond-mat.str-el↗